• Title/Summary/Keyword: pulse cleaning

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Fabrication and characterization of $WSi_2$ nanocrystals memory device with $SiO_2$ / $HfO_2$ / $Al_2O_3$ tunnel layer

  • Lee, Hyo-Jun;Lee, Dong-Uk;Kim, Eun-Kyu;Son, Jung-Woo;Cho, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.134-134
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    • 2011
  • High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

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17O Solid-State NMR Study of the Effect of Organic Ligands on Atomic Structure of Amorphous Silica Gel: Implications for Surface Structure of Silica and Its Dehydration Processes in Earth's Crust (유기 리간드와 비정질 실리카겔의 상호 작용에 대한 17O 고상핵자기공명 분광분석 연구: 실리카 표면 구조 및 지각의 탈수반응에 대한 의의)

  • Kim, Hyun Na;Lee, Sung Keun
    • Journal of the Mineralogical Society of Korea
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    • v.25 no.4
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    • pp.271-282
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    • 2012
  • We explore the effect of removal of organic ligand on the atomic configurations around oxygen in hydroxyl groups in amorphous silica gel (synthesized through hydrolysis of $SiCl_4$ in diethyl-ether) using high resolution $^{17}O$ solid state NMR spectroscopy. $^1H$ and $^{29}Si$ MAS NMR spectra for amorphous silica gel showed diverse hydrogen environments including water, hydroxyl groups (e.g., hydrogen bonded silanol, isolated silanol), and organic ligands (e.g., alkyl chain) that may interact with surface hydroxyls in the amorphous silica gel, for instance, forming silica-organic ligand complex (e.g., Si-$O{\cdots}R$). These physically and chemically adsorbed organic ligands were partly removed by ultrasonic cleaning under ethanol and distilled water for 1 hour. Whereas $^{17}O$ MAS NMR spectra with short pulse length ($0.175{\mu}s$) at 9.4 T and 14.1 T for as-synthesized amorphous silica gel showed the unresolved peak for Si-O-Si and Si-OH structures, the $^{17}O$ MAS NMR spectra with long pulse length ($2{\mu}s$) showed the additional peak at ~0 ppm. The peak at ~0 ppm may be due to Si-OH structure with very fast relaxation rate as coupled to liquid water molecules or organic ligands on the surface of amorphous silica gel. The observation of the peak at ~0 ppm in $^{17}O$ MAS NMR spectra for amorphous silica gel became more significant as the organic ligands were removed. These results indicate that the organic ligands on the surface of amorphous silica gel interact with oxygen atoms in Si-OH and provide the information about atomic structure of silanol and siloxane in amorphous silica gel. The current results could enhance the understanding of dehydration mechanism of diverse silicates, which is known as atomic scale origins of intermediate depth (approximately, 70~300 km) earthquakes in subduction zone.

Recent Progress in Air Conditioning and Refrigeration Research : A Review of Papers Published in the Korean Journal of Air-Conditioning and Refrigeration Engineering in 2007 (설비공학 분야의 최근 연구 동향 : 2007년 학회지 논문에 대한 종합적 고찰)

  • Han, Hwa-Taik;Shin, Dong-Sin;Choi, Chang-Ho;Lee, Dae-Young;Kim, Seo-Young;Kwon, Yong-Il
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.20 no.12
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    • pp.844-861
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    • 2008
  • The papers published in the Korean Journal of Air-Conditioning and Refrigeration Engineering during the year of 2007 have been reviewed. Focus has been put on current status of research in the aspect of heating, cooling, ventilation, sanitation and building environments. The conclusions are as follows. (1) The research trends of fluid engineering have been surveyed as groups of general fluid flow, fluid machinery and piping, etc. New research topics include micro nano fluid, micropump and fuel cell. Traditional CFD was still popular and widely used in research and development. Studies about fans and pumps were performed in the field of fluid machinery. Characteristics of flow and fin shape optimization are studied in the field of piping system. (2) The research works on heat transfer have been reviewed in the field of heat transfer characteristics, heat exchangers, and desiccant cooling systems. The research on heat transfer characteristics includes thermal transport in pulse tubes, high temperature superconductors, ground heat exchangers, fuel cell stacks and ice slurry systems. For the heat 'exchangers, the research on pin-tube heat exchanger, plate heat exchanger, condensers and gas coolers has been cordially implemented. The research works on heat transfer augmenting tubes have been also reported. For the desiccant cooling systems, the studies on the design and operating conditions for desiccant rotors as well as performance index are noticeable. (3) In the field of refrigeration, many papers were presented on the air conditioning system using CO2 as a refrigerant. The issues on the two-stage compression, the oil selection, and the appropriate oil charge were treated. The subjects of alternative refrigerants were also studied steadily. Hydrocarbons, DME and their mixtures were considered and various heat transfer correlations were proposed. (4) Research papers have been reviewed in the field of building facilities by grouping into the researches on heat and cold sources, air conditioning and air cleaning, ventilation and fire research including tunnel ventilation, flow control of piping system, and sound research with drain system. Main focuses have been addressed to the promotion of efficient or effective use of energy, which helps to save energy and results in reduced environmental pollution and operating cost. (5) Studies were mostly focused on analyzing the indoor environment in various spaces like cars, old tombs, machine rooms, and etc. in an architectural environmental field. Moreover, subjects of various fields such as the evaluation of noise, thermal environment, indoor air quality and development of energy analysis program were researched by various methods of survey, simulation, and field experiment.