• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.398-401
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• 2011

This paper presents a high-efficiency CMOS PWM DC-DC buck converter. It generates a constant output voltage(1-2.8V), from an input voltage(3.4-3.9V). Inductor-based type is chosen and inductor current is controlled with PWM operation. The designed circuit consists of power switch, Pulse Width Generation, Buffer, Zero Current Sensing, Current Sensing Circuit, Clock & Ramp generation, V-I Converter, Soft Start, Compensator and Modulator. Switching Frequency is 1MHz, It operates in CCM when the load current is more than 40mA, and the maximum efficiency is 98.71% at 100mA. Output voltage ripple is 0.98mV(input voltage:3.5V, output voltage:2.5V). The performance of the designed circuit has been verified through extensive simulation using a CMOS $0.18{\mu}m$ technology.

• Journal of Radiation Protection and Research
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• v.29 no.4
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• pp.251-256
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• 2004

CsI(Tl), $CdWO_4(CWO),\;Bi_4Ge_3O_{12}(BGO)\;and\;Gd_2SiO_5:Ce(GSO)$ scintillators were studied to manufacture a phoswich detector. The maximum wavelengths of the CsI(Tl), CWO, BGO and GSO scintillators are 550 nm, 475 nm, 490 nm and 440 nm for the radioluminescence, and the absolute light outputs of the CsI(Tl), CWO, BGO and GSO scintillators are 54890 phonon/MeV, 17762 phonon/MeV, 8322 phonon/MeV and 8932 phonon/MeV with a neutral filter, and the decay time of the CsI(Tl), CWO, BGO and GSO scintillators is $1.3{\mu}s,\;8.17{\mu}s$, 213 ns and 37 ns by a single photon method. The phoswich detector which was manufactured with plastic and CsI(Tl) scintillators could separate the ${\beta}$ particle and ${\gamma}$ ray. The phoswich detector could also measure the pulse height spectra of the ${\beta}$ particle and ${\gamma}$ ray by a PSD method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1180-1184
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• 2006

In a speech coding system using excitation source of voiced and unvoiced, it would be a distortion of speech quality in a voiced and an unvoiced consonants in a frame. In this paper, I propose a new multi-pulse coding method make use of V/S/TSIUVC switching and TSIUVC approximation-synthesis method in order to restrict a distortion of speech quality. The TSIUVC is extracted by using the zero crossing rate and individual pitch pulse. And the TSIUVC extraction rate was 91% for female voice and 96.2% for male voice. The important thing is that the frequency information of 0.547kHz below and 2.813kHz above can be made with high quality synthesis waveform within TSIUVC. I evaluated the MPC of V/UV and FBD-MPC of V/S/TSIUVC. As a result, the synthesis speech of FBD-MPC was better in speech quality than the MPC.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.605-608
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• 1993

Breakdown characteristics of a small rod-to-rod microairgap has been studied for obtain an optimum breakdown voltage and an airgap spacing to be used as an emission control means by the electrical arc-burning unburnt carbon particulates exhausted from a power station burner. It is found that the breakdown voltage at the rod-to-rod airgap spacing in the rang of $1{\sim}100{\mu}m$ decreased with decrease in the rod-to-rod airgap spacing. And there were no minimum breakdown voltage on a $V_b$-Pd characteristics which is known as the minimum voltage in Paschen's law in air atmosphere. Breakdown voltages of the airgap at the constant airgap spacing were $V_{b-dc}>V_{b-ac}>V_{b-pulse}$, and it was lowest for the pulse voltage applied. As a result, it is found that a pulse power was one of effective power compared with dc or ac to be used as such an unburnt carbon particulate emission control means and the airgap spacing became to several tens ${\mu}m$, then the breakdown voltages were down to several handreds voltages.

• YAKHAK HOEJI
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• v.27 no.1
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• pp.1-10
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• 1983

Voltammetric deposition and differential pulse anodic stripping (DPASV) of Ge(IV)at a gold electrode was investigated. Germanium (IV) exhibits two stripping peaks by DPASV in sodium borate solution, the first peak at about -1.1v. vs SCE and the second one, in the range of -0.6 to -0.2v. vs SCE. Factors affecting the sensitivity and precision included the nature of working electrode, supporting electrolytes, deposition potential, deposition time, pH, pulse height, voltage scan rate. The relative standard deviation of the measurements of the peak currents, for 100ng/ml Ge(IV), was less than ${\pm}3%$. The detection limit of Ge(IV) was 0.01ng/ml. Percent recovery in the extraction procedure of Ge(IV) from matrices by benzene in c-HCl, followed by back extraction with saturated borax solution, ranged from 96 to 104%.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.32-39
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• 1998

This paper presents the experimental results on the 3-electrode DC-PDP which has a common electrode to improve the PDP life cycle. The measured DC characteristic proves the effectiveness of common electrode absorbing about half of discharge currents. The waveforms for pulse memory operation of3-electrode PDP without crosstalk could also be determined from the I-V characteristics. The pulse memory drives of 8*8 cell array show the frequency response fo memory margin and the luminance efficiency of 3-electrode PDP are quite different from genrally known characteristics of 2-electrode DC-PDP.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1218-1222
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• 2008

We investigate the effect of rise time of a pulse bias voltage on atmospheric plasma generation. With the faster rise time of the pulse bias, the glow discharge appears to be more uniformly generated along the electrodes. I-V measurement confirms that higher loading power can be obtained using the faster rise time. A new understanding for atmospheric plasma generation at a micro-gap electrode is suggested.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.129-134
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• 2005

Electroplating copper is the important role in formation of 3D stacking interconnection in SiP (System in Package). The I-V characteristics curves are investigated at different electrolyte conditions. Inhibitor and accelerator are used simultaneously to investigate the effects of additives. Three different sizes of via are tested. All via were prepared with RIE (reactive ion etching) method. Via's diameter are 50, 75, $100{\mu}m$ and the height is $100{\mu}m$. Inside via, Ta was deposited for diffusion barrier and Cu was deposited fer seed layer using magnetron sputtering method. DC, pulse and pulse revere current are used in this study. With DC, via cannot be filled without defects. Pulse plating can improve the filling patterns however it cannot completely filled copper without defects. Via was filled completely without defects using pulse-reverse electroplating method.