• 한국추진공학회:학술대회논문집
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• 한국추진공학회 1994년도 제3회 학술강연회논문집
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• pp.21-26
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• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• 조명전기설비학회논문지
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• 제13권4호
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• pp.87-95
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• 1999

새로운 종류의 고체상태 대전력, 고속전자장치 즉 광전도전력스위치(PCPS)의 가장 큰 문제점은 평균전계하의 표면에서 스위치 섬락의 대부분이 반도체의 벌크파괴보다 낮다는 것이다. 이러한 문제를 극복하고 고밀도 고체 전력 스위치에 사용할 수 있는 유일한 방법이 고체 절연물로 표면을 페시베이션(Passivation)하는 것이다. 본 실험에서 Silicon의 절연내력은 진공중에서 10[kV/cm]에서 심하게 열화되어졌고, 기중에서 30[kV/cm], SF6에서 80∼90[kV/cm]으로 개선되지만, 스위치의 주 응용이 진공 또는 우주에서 사용되기 때문에 이러한 현상은 매우 심각한 문제이다. 페시베이션후 소자들은 진공과 기중에서 언페시베이션된 소자가 SF6내에서 얻을 수 있는 만큼의 높은 파괴값을 가졌다. 이러한 결과로 볼 때 페시베이션된 소자들이 매우 우수한 파괴값을 가진다는 것을 알 수 있다. 본 논문은 고전계 하에서 페시베이션 전·후 실리콘 파괴의 주 특성과 메커니즘에 대해 밝혔다.

• Tribology and Lubricants
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• 제35권3호
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• pp.176-182
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• 2019

The primary objective of this study is to treat a monocrystalline silicon (Si) wafer having a thickness of $279{\mu}m$ by employing the ultrasonic nanocrystal surface modification (UNSM) technology for improving the efficiency and service life of nano-electromechanical systems (NEMSs) and micro-electromechanical systems (MEMSs) by enhancing of wear and corrosion resistances. The wear and corrosion resistances of the Si wafer were systematically investigated before and after UNSM treatment, wherein abrasive, oxidative and spalling wear mechanisms were applied to the as-received and subsequently UNSM-treated Si wafer. Compared to the asreceived state, the wear and corrosion resistances of the UNSM-treated Si wafer are found to be enhanced by about 23% and 14%, respectively. The enhancement in wear and corrosion resistances after UNSM treatment may be attributed to grain size refinement (confirmed by Raman spectroscopy) and modified surface integrity. Furthermore, it is observed that the Raman intensity reduced significantly after UNSM treatment, whereas neither the Raman shift nor new phases were found on the surface of the UNSM-treated Si wafer. In addition, the friction coefficient values of the as-received and UNSM-treated Si wafers are found to be about 0.54 and 0.39, respectively. Hence, UNSM technology can be effectively incorporated as an alternative mechanical surface treatment for NEMSs and MEMSs comprising Si wafers.

• 한국주조공학회지
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• 제18권4호
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• pp.349-356
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• 1998

In this study, the influence of impurity element Ca, P on solidification behavior and morphology of eutectic silicon was examined by observation of microstructure and by DSC analysis. In the case of 1.3 ppm P, eutectic Si was fine and fibrous when the added amount of Ca was 500 ppm, However, the modification of eutectic Si was depressed by formation of polygonal Ca-Si compounds when the addition amount of Ca was greater than 1000 ppm. The addition of Ca 500 ppm depressed the primary and eutectic temperature. The primary and eutectic temperature were depressed with Ca 500 ppm but rather ascended when the addition amount of Ca was more than 1000 ppm. When the content of P was 17.5 ppm, eutectic Si had modified morphology with Ca addition. DAS was increased, the primary temperature was ascended and eutectic temperature was depressed with Ca added. Eutectic Si appeared as coarse flake phase and DAS was decreased with the increase of P content. The existence of P in the melt depressed the primary temperature and ascended eutectic temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.37-40
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• 2004

A 1 MV A single phase high temperature superconducting (HTS) transformer was manufactured and tested. The rated voltages of primary and secondary of the HTS transformer are 22.9 kV and 6.6 kV respectively. BSCCO-2223 HTS tape was used for HTS windings of 1 MV A HTS transformer. In order to reduce AC loss generated in the HTS winding, the type of concentric arrangement winding was adopted to a 1 MV A HTS transformer. Single HTS tape for primary windings and 4 parallel HTS tapes for secondary windings were used considering the each rated current of the HTS transformer. A core of HTS transformer was fabricated as a shell type core made of laminated silicon steel plate. And a GFRP cryostat with a room temperature bore was also manufactured. The characteristic tests of 1 MV A HTS transformer were performed such as no load test, short circuit test and several insulation tests at 65 K using sub-cooled liquid nitrogen. From the results of tests, the validity of design of HTS transformer was ascertained.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.37-41
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• 2015

The most common structure of the current transformer (CT) consists of a length of wire wrapped many times around a silicon steel ring passed over the circuit being measured. Therefore, the primary circuit of CT consists of a single turn of the conductor, with a secondary circuit of many tens or hundreds of turns. The primary winding may be a permanent part of the current transformer, with a heavy copper bar to carry the current through the magnetic core. However, when the large current flows into a wire, it is difficult to measure its magnitude of current because the core is saturated and the core shows magnetic nonlinear characteristics. Therefore, we proposed a newly designed CT which has an air gap in the core to decrease the generated magnetic flux. Adding the air gap in the magnetic path increases the total magnetic reluctance against the same magnetic motive force (MMF). Using a ferrite core instead of steel also causes the generation of low magnetic flux. These features can protect the magnetic saturation of the CT core compared with the steel core. This technique can help the design of the CT to obtain a special shape and size.

• 한국분말재료학회지
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• 제25권5호
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• pp.395-401
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• 2018

The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

• 자원리싸이클링
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• 제28권2호
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• pp.3-13
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• 2019

알루미늄은 지각 구성 원소 중 실리콘에 이어 두 번째로 풍부한 금속원소이다. 알루미늄은 가볍고, 전기전도도가 우수하고, 내식성이 우수하지만 산소와의 친화력이 강한 특성을 가지고 있다. 그러나 알루미늄의 1차 지금을 제조하기 위해서는 다량의 에너지를 소비한다. 한편 알루미늄 스크랩을 리사이클링하면 1차 지금 생산과 비교하여 에너지 및 환경부하를 저감할 수 있다. 그러나 알루미늄 스크랩 중의 불순물 제거가 곤란하여 재생되는 양은 한정되어 있다. 본 논문에서는 알루미나의 제조부터 스크랩 처리 및 용융까지의 알루미늄 생산 및 리사이클링 공정에 대하여 고찰하였다.

• 한국해양학회지:바다
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• 제6권1호
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• pp.40-48
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• 2001

2000년 2월에 남태평양에서 수심 200m까지 수온, 염분, 용존산소, 영양염, 엽록소, 일차생산성의 수직분포를 조사하였다. 연구해역(남위 $24^{\circ}{\sim}41^{\circ}$, 서경 $80^{\circ}{\sim}168^{\circ}$)은 물리적으로 크게 두 해역으로 나누어진다. 서경 $110^{\circ}$을 경계로 동쪽해역에서는 수심 200m이하의 중층수가 표층으로 활발히 용승하였고, 서쪽해역에서는 중층수의 용승이 거의 일어나지 않았다. 따라서 해수의 화학조성도 다르게 나타났다. 동쪽해역에서는 영양염 농도가 높은 중층수의 용승에 의해 표층 100m에서 질산염+아질산염과 인산염 농도가 서쪽해역에 비해 상당히 높게 관측되었지만, 중층수의 용승에도 불구하고 규산염 농도는 오히려 서쪽해역보다 낮았다. 영양염 중에서 식물플랑크톤의 일차생산성에 영향을 미치는 주요 원소도 해역에 따라 달랐다. 동쪽해역에서는 규소에 의해 일차생산성이 가장 큰 영향을 받는 반면, 서쪽해역에서는 질소가 일차생산성에 가장 큰 영향을 미쳤다. 중층수의 용승에 의해 영양염 농도의 큰 차이에도 불구하고, 식물플랑크톤의 일차생산성은 두 해역이 서로 비슷한 값을 보였으며, 수심 200m까지 합한 엽록소 총량은 오히려 동쪽해역에 비해 서쪽해역에서 2배 가량 높게 측정되었다.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.293-302
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• 2015

Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.