• 조명전기설비학회논문지
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• 제13권4호
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• pp.82-86
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• 1999

본 연구에서는 푸로브법과 교류중첩법을 이용하여 고주파 유도결합 플라즈마에서 전자에너지 분포함수를 측정하였다. 실험조건은 압력 10∼40[mTorr], 입력파워는 100∼600[W]이고, 가스유량은 3∼12[sccm]이며, 전자에너지 분포함수의 공간분포 측정에 있어서 아스펙트비(R/L)는 2로 하였다. 전자에너지 분포함수는 압력 및 입력파워에 대하여 강한 의존성을 나타내었고, 가스유량이 증가할수록 증가 하였다. 전자에너지 분포함수의 반경방향 분포는 플라즈마 중심에서 최대가 되었다. 전자에너지 분포함수의 축방향 분포는 석영창과 기판 사이의 중심에서 최대가 되었다. 이러한 결과는 고주파 유도결합 플라즈마의 생성 메커니즘 이해와 간단한 ICP(Inductively Coupled Plasma) 모델링 응용에 기여할 수 있을 것이다.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.790-793
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• 2011

In this study, the surface modification for a silicon(Si) mold using $CHF_3$ inductively coupled plasma(ICP). The conditions under that plasma was treated a input ICP power 600 W, an operating gas pressure of 10 mTorr and plasma exposure time of 30 sec. The Si mold surface became hydrophobic after plasma treatment in order to $CF_x$(X= 1,2,3) polymer. However, as the de-molding process repeated, it was investigated that the contact angle of Si surface was decreased. So, we attempted to investigate the degradation mechanism of the accurate pattern transfer with increasing the count of the de-molding process using scanning electron microscope (SEM), contact angle, and x-ray photoelectron spectroscopy (XPS) analysis of Si mold surface.

• 청정기술
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• 제9권3호
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• pp.101-105
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• 2003

MEMS(Micro Electro Mechanical System) 기술에서 실리콘 식각기술의 중요성으로 플라즈마 식각기술의 개발이 꾸준히 진행되고 있다. 본 연구에서는 ICP(Inductive Coupled Plasma)를 이용하여 플라즈마를 발생시켜, 이온에너지를 증가시키지 않고도 이온밀도를 높이고 이온입자들에 의한 식각의 방향성을 가할 수 있는 새로운 플라즈마 기술을 이용하였다. 이같이 플라즈마를 이용하여 실리콘웨이퍼를 식각하여 제조하는 MEMS 응용분야는 다양하나, 본 연구에서는 미생물배양에 응용할 수 있는 PCR(Polymerase Chain Reaction)장치 제작을 위한 식각에 이용하였다. Platen power, Coil power 및 Process pressure에 다양한 변화를 주어 각 변수에 따른 식각속도를 관찰하였다. 각 공정별 변수를 변화시킨 결과 Platen 12W, Coil power 500W, 식각/Passivation Cycle 6/7sec 일 경우 식각속도는 $1.2{\mu}m/min$ 이었고, sidewall profile은 $90{\pm}0.7^{\circ}$로 나타나 매우 우수한 결과를 보였다. 분 연구에 SF6를 식각에 이용하였으며 공정의 최적화를 통하여 사용량을 최소화하여환경영향이 최소가 될 수 있는 가능성이 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.281-283
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• 1994

The impedance characteristics of planar ICP have been measured and compared with the theoretical results obtained by the field equation. The resistance of the total impedance had a maximum point and the inductance decreased monotonically as the electron density increased from $2.5{\times}10^{10}cm^{-3}$ to $7{\times}10^{11}cm^{-3}$ and the Pressure from 1mT to 50mT. The impedance characteristics were also dependent on the profile of the electron density. The effective collision frequency, ${\nu}_{eff}$ was $9.0{\times}10^6Hz$ at 5mT and $.5{\times}10^7Hz$ at 100mT. The effective collision frequency at 5mT was not so different from that at 100mT and it is doe to the reduction of the discharge channel cross-section at high pressure. The estimated effective collision frequency from the simulation data was of the same order as the measured one.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.138-141
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• 2002

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : $Cl_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained $r_m$ values were smaller than $0.1\Omega$ at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below $0.2\Omega$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.65-66
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• 2005

Etching characteristics of $Ge_2Sb_2Te_5$ (GST) films were investigated using $Cl_2$/Ar inductively coupled plasma.We examined the etching characteristics such as etching rate and selectivity over oxide films of GST films using inductively coupled plasma (ICP) with various etching parameters such as $Cl_2$/Ar gas mixing ratios, ICP source power, pressure, and bias power. The maximum etch rate of GST film was $2,815{\AA}$/min and the selectivity higher than 12:1 over the oxide films was also obtained at the $Cl_2$ flow rates of 40 sccm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.162-163
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• 2007

The dry etching of Si was investigated using direct dc biasing to the Si substrate. The TCP type etching system with a feed-through for applying a dc bias was used in the etching. The applied dc bias and ICP power was varied to examine the effect on the etching at the fixed chamber pressure and $SF_6$ flow rate of 10 mTorr and 10 sccm during. When the plasma was generated at ICP power of 100 W, the etch rate of Si was increased with the bias for the biased samples. However, the etching of Si for the non-biased sample was enhanced for the increased ICP power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.156-162
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• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.