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http://dx.doi.org/10.4313/TEEM.2008.9.4.156

On the Etching Mechanism of Parylene-C in Inductively Coupled O2 Plasma  

Shutov, D.A. (Department of Electronic Devices & Materials Technology, Ivanovo State University of Chemistry & Technology)
Kim, Sung-Ihl (Department of IT Electronics Engineering, Daejeon University)
Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.4, 2008 , pp. 156-162 More about this Journal
Abstract
We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.
Keywords
Parylene-C; Oxygen plasma; Etching mechanism; Plasma modeling;
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