• Title/Summary/Keyword: pressure, conductivity

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A Study on the Conductivity of Polycrystalline Semiconductor Nickel Oxide (NiO의 Semiconductivity에 關한 硏究)

  • Choi, Jae-Shi;Yo, Chul-Hyun
    • Journal of the Korean Chemical Society
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    • v.12 no.2
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    • pp.39-43
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    • 1968
  • The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\;to\;800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\;mmHg\;to\;10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e. ${\sigma}=K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

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Fabrication of a multi-functional one-chip sensor for detecting water depth, temperature, and conductivity (수위, 온도, 전도도 측정을 위한 다기능 One-Chip 센서의 제조)

  • Song, Nak-Chun;Cho, Yong-Soo;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.15 no.1
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    • pp.7-12
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    • 2006
  • The multi-functional one-chip sensor has been fabricated to reduce output variation under various water environment. There were a temperature sensor, a piezoresistive type pressure sensor, and a electrode type conductivity sensor in the fabricated one-chip sensor. This sensor was measured water depth in the range of $0{\sim}180cm$, temperature in the range of $0{\sim}50^{\circ}C$, and salinity in the range of 0 $0wt%{\sim}5wt%$, respectively. Since the change of water depth in solution environment depends on various factors such as salinity, latitude, temperature, and atmospheric pressure, the water depth sensor is needed to be compensated. We tried to compensate the salinity and temperature dependence for the pressure in water by using lookup-table method.

Effects of Plasma Spray Conditions on Photoelectric Properties of Plasma Sprayed $TiO_2$ Semiconductor ($TiO_2$ 반도체 용사피막의 광전극 특성에 미치는 용사조건의 영향)

  • 박정식;박경채
    • Journal of Welding and Joining
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    • v.12 no.1
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    • pp.94-101
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    • 1994
  • In this study, plasma spraying has been used to produce $TiO_2$ polycrystalline coatings from $TiO_2$ powders. The physical and chemical properties of plasma sprayed $TiO_2$ coatings depend greatly on plasma spraying conditions. The electrical resistivity, oxygen concentration, photocurrent and crystal structure of plasma sprayed $TiO_2$ coating has been studied. The results are as follows: 1. The oxygen loss and electrical conductivity of $TiO_2$ plasma sprayed coatings increased by low pressure and high amount of auxiliary gas, hydrogen in plasma spraying. 2. Oxygen loss increase electrical conductivity, and decrease photocurrent of $TiO_2$ plasma sprayed coatings. 3. Photocurrent of $TiO_2$ plasma sprayed coatings manufactured in atmospheric pressure is higher than that of low pressure.

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Defect Chemistry of BaTiO_3$ Codoped with Mn and Nb

  • Han, Young-Ho;Shin, Dong-Jin
    • The Korean Journal of Ceramics
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    • v.4 no.2
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    • pp.68-71
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    • 1998
  • The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

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The Study of Long-Term Performance Evaluation of Vacuum Insulation Panel(VIP) with Accelerated Aging Test (가속노화 시험을 통한 진공단열패널(VIP)의 장기성능 평가 연구)

  • Kim, Jin-Hee;Kim, Jun-Tae
    • Journal of the Korean Solar Energy Society
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    • v.37 no.4
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    • pp.35-47
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    • 2017
  • Energy efficiency solutions are being pursued as a sustainable approach to reducing energy consumption and related gas emissions across various sectors of the economy. Vacuum Insulation Panel (VIP) is an energy efficient advanced insulation system that facilitates slim but high-performance insulation, based on a porous core material evacuated and encapsulated in a barrier envelope. Although VIP has been applied in buildings for over a decade, it wasn't until recently that efforts have been initiated to propose and adopt a global standard on characterization and testing of VIP. One of the issues regarding VIP is its durability and aging due to pressure and moisture dependent increase of the initial low thermal conductivity with time; more so in building applications. In this paper, the aging of commercially available VIP was investigated experimentally; thermal conductivity was tested in accordance with ISO 8302 standard (guarded hot box method) and long-term durability was estimated based on a non-linear pressure-humidity dependent equation based on study of IEA/ECBCS Annex 39, with the aim of assessing durability of VIP for use in buildings. The center-of-panel thermal conductivity after 25 years based on initial 90% fractile with a confidence level of 90 % for the thermal conductivity (${\lambda}90/90$) ranged from 0.00726-0.00814 (W/m K) for silica core VIP. Significant differences between manufacturer-provided data and measurements of thermal conductivity and internal pressure were observed.

Effect of Deposition Pressure on the Conductivity and Optical Characteristics of a-Si:H Films (증착 압력이 a-Si:H막의 전도도와 광학적 특성에 미치는 영향)

  • Jeon, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.10 no.1
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    • pp.98-104
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    • 1999
  • In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

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Thermo-electrical properties of randomly oriented carbon/carbon composite

  • Raunija, Thakur Sudesh Kumar;Supriya, N.
    • Carbon letters
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    • v.22
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    • pp.25-35
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    • 2017
  • The aim of the work was to investigate the thermo-electrical properties of low cost and rapidly produced randomly oriented carbon/carbon (C/C) composite. The composite body was fabricated by combining the high-pressure hot-pressing (HP) method with the low-pressure impregnation thermosetting carbonization (ITC) method. After the ITC method step selected samples were graphitized at $3000^{\circ}C$. Detailed characterization of the samples' physical properties and thermal properties, including thermal diffusivity, thermal conductivity, specific heat and coefficient of thermal expansion, was carried out. Additionally, direct current (DC) electrical conductivity in both the in-plane and through-plane directions was evaluated. The results indicated that after graphitization the specimens had excellent carbon purity (99.9 %) as compared to that after carbonization (98.1). The results further showed an increasing trend in thermal conductivity with temperature for the carbonized samples and a decreasing trend in thermal conductivity with temperature for graphitized samples. The influence of the thickness of the test specimen on the thermal conductivity was found to be negligible. Further, all of the specimens after graphitization displayed an enormous increase in electrical conductivity (from 190 to 565 and 595 to 1180 S/cm in the through-plane and in-plane directions, respectively).

Characterization of AlN Thin Films Grown by Pulsed Laser Deposition with Various Nitrogen Partial Pressure (다양한 질소분압에서 펄스레이저법으로 성장된 AlN박막의 특성)

  • Chung, J.K.;Ha, T.K.
    • Transactions of Materials Processing
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    • v.28 no.1
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    • pp.43-48
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    • 2019
  • Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

In-situ spectroscopic studies of SOFC cathode materials

  • Ju, Jong-Hun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.70.1-70.1
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    • 2012
  • In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

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Effect of Thermal Conductivity of Bearing on the Lubrication Performance of Parallel Slider Bearing (베어링의 열전도율이 평행 슬라이더 베어링의 윤활성능에 미치는 영향)

  • Park, TaeJo;Lee, WonSeok;Park, JiBin
    • Tribology and Lubricants
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    • v.34 no.6
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    • pp.247-253
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    • 2018
  • Temperature rise due to viscous shear of the lubricating oil generates hydrodynamic pressure, even if the lubricating surfaces are parallel. This effect, known as the thermal wedge effect, varies significantly with film-temperature boundary conditions. The bearing conducts a part of the heat generated; hence, the oil temperature varies with the thermal conductivity of the bearing. In this study, we analyze the effect of thermal conductivity on the thermohydrodynamic (THD) lubrication of parallel slider bearings. We numerically analyze the continuity equation, Navier-Stokes equation, energy equation including the temperature-viscosity and temperature-density relations for lubricants, and the heat conduction equation for bearing by creating a 2D model of the micro-bearing using the commercial computational fluid dynamics (CFD) code FLUENT. We then compare the variation in temperature, viscosity, and pressure distributions with the thermal conductivity. The results demonstrate that the thermal conductivity has a significant influence on THD lubrication characteristics of parallel slider bearings. The lower the thermal conductivity, the greater the pressure generation due to the thermal wedge effect resulting in a higher load-carrying capacity and smaller frictional force. The present results can function as the basic data for optimum bearing design; however, the applicability requires further studies on various operating conditions.