• 제목/요약/키워드: preferred density

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Sputtering법으로 성장한 PZT 박막의 Target의 Pb Excess에 따른 전기적 특성에 관한 연구 (Electrical characteristic of PZT thin film deposit by Rf-magnetron sputtering as Pb excess ratio of target)

  • 이규일;강현일;박영;박기엽;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.570-573
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    • 2002
  • Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

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폐경여성의 낙상 위험과 관련요인 (Fall Risk related Factors in Postmenopausal Women)

  • 이정한;김희승
    • 성인간호학회지
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    • 제26권5호
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    • pp.533-542
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    • 2014
  • Purpose: The purpose of this study was to understand the risk of falling associated with postmenopausal women and to identify the relationships between this risk and factors such as lifestyle, metabolic syndrome, and bone mineral density. Methods: The sample was 128 postmenopausal women between 50 and 65 from one menopausal clinic in an urban city. The Risk Assessment for Falls Scale II, developed by Glydenvand and Reinboth (1982) and adapted by Park Young-Hye (2003), was modified and used for this study. Results: The average fall-risk score in postmenopausal women was 7.2 out of 33, the fall-risk score associated with lifestyle was higher in women exposed to stress frequently or who favored spicy or salty foods. The fall-risk score associated with metabolic syndrome was higher in groups with HBP or with a waist circumference of 80cm or greater. The fall-risk score in groups with three or more factors of metabolic syndrome was the highest. Conclusion: The risk of fall in post-menopausal women was higher in groups with only elementary education, unemployed, reported two or more chronic diseases or reported frequent exposure to stress and for women who preferred spicy or salty foods or exhibited three or more factors of metabolic syndrome.

Differences in Density and Body Condition of Small Rodent Populations on Different Distance from Road

  • Hur, Wee-Haeng;Lee, Woo-Shin;Choi, Chang-Yong;Park, Young-Su;Lee, Chang-Bae;Rhim, Shin-Jae
    • 한국산림과학회지
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    • 제94권2호통권159호
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    • pp.108-111
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    • 2005
  • This study was conducted to identify the road effect on small rodent populations within fragmented forest areas around the road from June to September 2002, in 9 study sites of Baekdugdaegan mountains, Korea. Two species of small rodents, Korean field mouse Apodemus peninsulae and striped field mouse Apodemus agrarius, were captured in this study. Korean field mouse preferred forest area, and striped field mouse generally has been found edge area around road. Mean body weight of Korean field mouse was significantly different, but that of striped field mouse was not between both distance from road. Korean field mouse is forest-dwelling species and their distribution is limited in forest area. In contrast, striped field mouse has wide distributional range around road. The effects of road is different in each small rodent species and their habitat preferences.

포도당 센서의 제작을 위한 고정화 방법의 전기화학적 결정 (Electrochemical Determination of Immobilization Technique for Glucose Sensor Fabrication)

  • 정태훈;홍석인;노봉수;정용섭;윤정원;김태진
    • KSBB Journal
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    • 제13권1호
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    • pp.52-57
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    • 1998
  • The present work proposes a simple electrochemical method applicable to any immobilization processes of oxidase using a Clark type oxygen electrode as a base transducer. The present work suggests an optimal immobilization technique among three different methods of glucose oxidase(GOD) onto one side of $37[\mu}$mthick blend membranes, composed o 80% of cellulose triacetate and 20% of polycaprolactone, on the basis of the maximum Michaelis-Menten parameter(Vm) determined by either steady state or transient analyses. The electrode system was made of disk type gold cathode(4mm diameter) and Ag/AgCl anode. One side of the blend membrane was in contact with the cathode surface while the other side was immobilized with GOD either in covalent-bond or cross-linked forms, the latter being covered by $25{\mu}$m thick dialysis membrane of cellulose acetate. The resultant current density was on-line monitored by a potentiostat while glucose level was varied from 1 to 20 mM. The present study shows that direct cross-linking of GOD with glutaraldehyde was mostly preferred for fabrication of glucose sensor, on the basis of resultant kinetic parameters from either steady state or transient analyses.

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ONO 버퍼층을 이용한 Metal/Ferroelectrics/Insulator/Semiconductor 구조의 제작 및 특성 (Fabrication and Properties of Metal/Ferroelectrics/Insulator/Semiconductor Structures with ONO buffer layer)

  • 이남열;윤성민;유인규;류상욱;조성목;신웅철;최규정;유병곤;구진근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.305-309
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    • 2002
  • We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

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수열합성에 의한 c축 배향 ZnO 나노로드 배열의 성장과 구조, 광학적 특성 (Growth, Structural and Optical Properties of c-axis Oriented ZnO Nanorods Array by Hydrothermal Method)

  • 김경범;김창일;정영훈;이영진;백종후
    • 한국전기전자재료학회논문지
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    • 제23권3호
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    • pp.222-227
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    • 2010
  • ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

동전기-생물학적복원기술과 계면활성제를 이용한 phenanthrene 오염토양의 정화

  • 김상준;박지연;이유진;양지원
    • 한국지하수토양환경학회:학술대회논문집
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    • 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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    • pp.186-190
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    • 2004
  • The electrokinetic bioremediation employing electrolyte circulation method was carried out for the cleanup of phenanthrene-contaminated kaolinite, and microorganism used in the biodegradation of phenanthrene was Sphingomonas sp. 3Y. The electrolyte circulation method supplied ionic nutrientsand the microorganism into soil, and inhibited the significant pH change of soil by increasing the soil buffering capacity by providing phosphate buffer compounds. When the remediation process was conducted without surfactant, the removal efficiency of phenanthrene, at the initial concentration of 200 ppm, was 69% for only 7 days. Higher microbial population and lower phenanthrene concentration were observed in the anode and middle regions of soil specimen than in the cathode region. The higher density of microorganism was because the microbial movement was in the direction of the anode part due to the negative surface charge. When Triton X-100 and APG of 20 g/1 were used to improve the bioavailability of phenanthrene strongly adsorbed onto soil surface, about 90 and 39% of phenanthrene removal were obtained. Consequently, it was confirmed that the microorganism preferred APC to phenanthrene as carbon source and so the removal efficiency with APG decreased less than that without APG.

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Preparation of $Ba_{1-x}Sr_xTiO_3$ thin films by metal-organic chemical vapor deposition and electrical properties (Preparation of $Ba_{1-x}Sr_xTiO_3$thin films by metal by metal-organic chemical vapor deposition and electrical properties.)

  • Yoon, Jong-Guk;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Ho-Gi
    • 한국진공학회지
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    • 제5권1호
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    • pp.62-66
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    • 1996
  • $(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

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루테늄 전극위에 증착된 PZT 박막의 전기적 및 강유전 특성 (The Electric and Ferroelectric of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on Ruthenium Electrodes)

  • 황현석;유영식;임윤식;강현일
    • 전기학회논문지P
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    • 제63권1호
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    • pp.46-49
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    • 2014
  • $Pb(Zr_{0.52}Ti_{0.48})O_3(PZT)$ thin films deposited on $Ru/RuO_2$ bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /$RuO_2$ capacitor showed a leakage current density in the order of $2.03{\times}10^{-7}$ $A/cm^2$ as a 50 kV/cm, a remnant polarization (Pr) of 9.22 ${\mu}C/cm^2$, and a coercive field (-EC) of -32.22 kV/cm. The results show that $Ru/Ru/RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

유리기판위에 증착한 50% Pb-excess PZT박막의 전기적특성 (Electrical Properties of 50% Pb-excess PZT Thin Films Deposited on the Glass Substrates)

  • 정규원;박영;주필연;박기엽;송준태
    • 한국전기전자재료학회논문지
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    • 제14권5호
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    • pp.370-375
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    • 2001
  • PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

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