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http://dx.doi.org/10.5370/KIEEP.2014.63.1.046

The Electric and Ferroelectric of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on Ruthenium Electrodes  

Hwang, Hyun Suk (서일대학교 전기과)
Yu, Yougn Sik (여주대학 전기과)
Lim, Yun-Sik (여주대학 방송제작연예과)
Kang, Hyun-Il (국립한밭대학교 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers P / v.63, no.1, 2014 , pp. 46-49 More about this Journal
Abstract
$Pb(Zr_{0.52}Ti_{0.48})O_3(PZT)$ thin films deposited on $Ru/RuO_2$ bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /$RuO_2$ capacitor showed a leakage current density in the order of $2.03{\times}10^{-7}$ $A/cm^2$ as a 50 kV/cm, a remnant polarization (Pr) of 9.22 ${\mu}C/cm^2$, and a coercive field (-EC) of -32.22 kV/cm. The results show that $Ru/Ru/RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.
Keywords
PZT; Perovskite; Leakage current; Ruthenium;
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