• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

• Journal of Chest Surgery
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• v.37 no.4
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• pp.307-312
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• 2004

With the development of cardiac surgical technique, we need more prosthetic materials for repairing the intra- and extracardiac defects. Although bovine pericardial bioprosthesis treated with glutaraldehyde (GA) solution is one of the most popular materials, it has a drawback of later calcific degeneration. The purpose of this study is to investigate the effectiveness of several materials and methods in reducing the calcific degeneration of bovine pericardium. Material and Method: Forty square-shaped pieces of bovine pericardia were fixed in 0.625% GA solution with 4 g/L MgCl$_2$ㆍ6$H_2O$ as a control group (group 1). Other 40 pieces pre-treated with 1 % SDS(group 2) and 40 pieces post-treated with 8% glutamate (group 3) and 2% chitosan (group 4) were also fixed in the same GA solution. Other 40 pieces pre-treated with 1% SDS and post-treated with 8% glutamate and 40 pieces post-treated with 2% chitosan were also fixed in the same GA solution (group 5, 6). The pericardial pieces were implanted into the belly of 40 Fisher 344 rats subdermally and were extracted 1 month, 2 months, 3 months, and 6 months after the implantation. With an atomic absorption spectrophotometry, we measured the calcium amount deposited and examined the tissue with microscope. Result: The calcium deposition in 1 month was less in group 2, 5, 6 than that in group 1 (p＜0.05). It was most prominent in group 5 (p＜0.01). This finding continued in 2 month. In 3 month, the calcium deposition was less in group 3 and 4 as well as group 2, 5, and 6 than in group 1. In 6 month, the calcium deposition in group 2, 3, 4, 5, and 6 was less than that in group 1 and the difference was more than that of 1, 2, and 6 month. The microscopic calcium deposition was also less in group 2 and 5. Calcium deposition developed in the whole layer of pericardium, beginning with the surrounding the collagen fiber and progressing inwardly. Conclusion: Pre-treatment with SDS, post-treatment with glutamate or chitosan, and SDS pre-treatment and post-treatment with glutamate or chitosan were effective in reducing the calcium deposition in bovine pericardium. Moreover, the combined method of SDS pre-treatment and glutamate post-treatment was more effective than other methods.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.311-316
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• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.513-520
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• 1990

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.577-584
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• 2005

Thin Ni-B layer, $1{\mu}m$ thick, was electrolessly deposited on Cu electrode fabricated by electro-deposition. The purpose of the layer is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier. The layers were annealed at $580^{\circ}C$ with and without pre-annealing at $300^{\circ}C$ for . 30minutes. In the layer with pre-annealing, the amount of Cu diffusion was lower about 5 times than the layer without pre-annealing. The difference in Cu concentration may be attributed to $Ni_3B$ formation prior to Cu diffusion. However, the difference in Cu concentration decreased during the annealing time of 5 h due to the grain growth of Ni.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.3
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• pp.299-310
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• 1999

Effect of electrostatic and inertial forces on the pre-charged particle deposition was theoretically and experimentally studied by introducing the inertia impactor subjected to an electric field. To derive the analytic solution, we assumed that a flow was an ideal stagnation flow, a particle had saturation charges, and the electric field within the test section was uniform. On the other hand, $Al_2O_3$ particle groups were used as the test particles, which mean sizes were $1{\mu}m$, $3{\mu}m$, and $5{\mu}m$. To measure the deposition efficiency, the light scattering method was used. The results showed that the deposition efficiency was minimized at a certain nozzle velocity as increasing the nozzle velocity, only if the electric force was applied. As the electric field strength increased, $Stk_{50}{^{1/2}}$ was decreased, and its decreasing rate was reduced with increasing the flow velocity. Moreover the existence of electric field was against the cut-off performance of the inertia impactor.

• Transactions of Materials Processing
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• v.29 no.2
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• pp.103-112
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• 2020

This study explores the effects of different pre-machining conditions on the deposition characteristics and mechanical properties of austenitic stainless steel samples repaired using direct energy deposition (DED). In the DED repair process, defects such as pores and cracks can occur at the interface between the substrate and deposited material. In this study, we varied the shape of the pre-machined zone for repair in order to prevent cracks from occurring at the slope surface. After repairs by the DED process, macro-scale cracks were observed in samples that had been pre-machined with elliptic and trapezoidal grooves. In addition, it was not possible to completely prevent micro-crack generation on the sloped interfaces, even in the capsule-type grooved sample. From observation of the fracture surfaces, it was found that the cracks around the inclined interface were due to a lack of fusion between the substrate and the powder material, which led to low tensile properties. The specimen with the capsule-type groove provided the highest tensile strength and elongation (respective of 46% and 571% compared to the trapezoidal grooved specimen). However, the tensile properties were degraded compared to the non-repaired specimen (as-hot rolled material). The fracture characteristics of the repaired specimens were determined by the cracks at the sloped interfaces. These cracks grew and coalesced with each other to form macro-cracks, they then coalesced with other cracks and propagated to the substrate, causing final fracture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.38-41
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• 2001

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.