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http://dx.doi.org/10.3740/MRSK.2005.15.9.577

Cu Diffusion Behavior of Ni-B Diffusion Barrier Fabricated by Electroless Deposition  

Choi, Jae-Woong (Div. of Materials Science and Engineering, Hanyang Univ.,)
Hwang, Gil-Ho (Div. of Materials Science and Engineering, Hanyang Univ.,)
Han, Won-Kyu (Div. of Materials Science and Engineering, Hanyang Univ.,)
Lee, Wan-Hee (Div. of Materials Science and Engineering, Hanyang Univ.,)
Kang, Sung-Goon (Div. of Materials Science and Engineering, Hanyang Univ.,)
Publication Information
Korean Journal of Materials Research / v.15, no.9, 2005 , pp. 577-584 More about this Journal
Abstract
Thin Ni-B layer, $1{\mu}m$ thick, was electrolessly deposited on Cu electrode fabricated by electro-deposition. The purpose of the layer is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier. The layers were annealed at $580^{\circ}C$ with and without pre-annealing at $300^{\circ}C$ for . 30minutes. In the layer with pre-annealing, the amount of Cu diffusion was lower about 5 times than the layer without pre-annealing. The difference in Cu concentration may be attributed to $Ni_3B$ formation prior to Cu diffusion. However, the difference in Cu concentration decreased during the annealing time of 5 h due to the grain growth of Ni.
Keywords
electroless Ni-B deposition; HR-XRD; diffusion barrier;
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