• 제목/요약/키워드: power device

검색결과 5,010건 처리시간 0.034초

정밀유도 비행체 탑재용 전원공급장치 개발 (Development of Onboard Power Supply Device for Precision Guided Kit)

  • 박덕배;김형신
    • 전기학회논문지P
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    • 제57권3호
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    • pp.209-214
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    • 2008
  • A precision guided kit is a GPS/INS guided range extension system to improve the accuracy and availability of existing dumb bombs. The PSD(power supply device) installed in the GPS guided kit supplies electrical power to all electrical loads in the kit. In this paper, design process and test results of the PSD have been presented. Additionally, the performance results of the PSD during actual ground and flight tests have been described.

개선된 음성 기록 제어 장치의 개발 (Development of advanced voice recorder control system)

  • 장중식
    • 한국시뮬레이션학회:학술대회논문집
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    • 한국시뮬레이션학회 1999년도 추계학술대회 논문집
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    • pp.272-277
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    • 1999
  • The necessity of voice recording device was increased using voice signal IC with designed LSI/VLSI. The control unit which developed here voice recorder has low power dissipation, portable, and comfortable using voice source. However, the Korea voice recorder abilities far behind of foreign products for its performance and size on sailing. So we used Chua circuit to improvement voice quality abilities after minimize power supply device and circuit by designing voice recording device into lower power dissipation power circuit.

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고조파 왜곡 환경에서 향상된 역률 계측 알고리즘 개발 (Development of advanced Power Factor Computation Algorithm in Harmonics distorted Distribution System)

  • 이현우;박영균;이진한;정상현;박철우
    • 전자공학회논문지
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    • 제53권7호
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    • pp.121-127
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    • 2016
  • 본 논문에서는 고조파로 전압과 전류가 왜곡된 상황에서 정확하게 기본파의 역률을 측정할 수 있는 방법을 제안한다. 제안한 역률 계측 방법에서는 전압과 전류를 DQ회전좌표계로 변환한 후 유효전력과 무효전력을 계산하여 역률값을 구하게 된다. 기존의 역률 계측방법과 제안한 방법을 수식적으로 비교하여 제시하고, 제안한 방법은 전압과 전류 모두 고조파 왜곡된 상황에서도 기본파의 역률을 정확하게 계측할 수 있는 것을 MATLAB을 이용한 모의실험에서 확인한다. 제안한 역률 계측방법을 자동역률제어장치에 적용할 경우 고조파 왜곡 환경에서 역률 보상 성능을 최대화 할 수 있다. 그 결과 수용가에서는 역률 개선을 통한 전기료 감소, 선로손실 감소, 부하 용량 증대 효과가 기대된다. 특히 발전 사업가 측에서는 역률 보상 성능의 향상으로 송전 여유 용량 확보와 발전량 절감이 가능하다.

도시철도차량 추진제어시스템 고찰 및 개선에 대한 연구 (The Study about Development and Consideration of Urban Railroad Vehicle Propulsion Control Device)

  • 이미정;이형우;하종은
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2011년도 정기총회 및 추계학술대회 논문집
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    • pp.2323-2328
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    • 2011
  • There have been many changes in Subway train types since SeoulMetro opened the Line No.1 in 1974. Propulsion control device has changed many times following the generations of control method from resistance control method which uses large resistor for the traction motor control to chopping control which uses power semiconductors and finally to inverter control. Railroad vehicle propulsion control device refers to devices such as converter/inverter which supply power for subway operation, power conversion equipment like small switching-mode power supply and traction motor. In this paper, we will analyze every part of railroad vehicle propulsion control device of SeoulMetro so we can find problems in the subway operation. And we will present propulsion control device model which makes minimized failures, efficient maintenance possible when replacing railroad vehicle later. By doing this, we hope to ensure stability and improve energy efficiency to the top.

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건물 풍력발전을 위한 집풍장치 성능 연구 (Performance Study of Wind Augmentation Device for Building-integrated Wind Power)

  • 신재렬;박재근;김한영;김대영
    • 한국유체기계학회 논문집
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    • 제15권4호
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    • pp.42-49
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    • 2012
  • This study is performance estimation of wind augmentation device for BiWP(Building-integrated Wind Power) which recently attracts attention as a local power. various structures are installed on a rooftop of residential complex buildings. Changing a profile of these, we designed a configuration that is able to capture much air and increase exit velocity. To estimate wind augmented effect of this device, we compared numerical analysis results with wind tunnel test results. Results show that exit velocity is increased from 24% to 60% by wind augmented device on a rooftop of building.

500 V 급 Planar Power MOSFET의 P 베이스 농도 변화에 따른 설계 및 특성 향상에 관한 연구 (A Study About Design and Characteristic Improvement According to P-base Concentration Charge of 500 V Planar Power MOSFET)

  • 김권제;강예환;권영수
    • 한국전기전자재료학회논문지
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    • 제26권4호
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    • pp.284-288
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    • 2013
  • Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

UPFC Device: Optimal Location and Parameter Setting to Reduce Losses in Electric-Power Systems Using a Genetic-algorithm Method

  • Mezaache, Mohamed;Chikhi, Khaled;Fetha, Cherif
    • Transactions on Electrical and Electronic Materials
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    • 제17권1호
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    • pp.1-6
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    • 2016
  • Ensuring the secure operation of power systems has become an important and critical matter during the present time, along with the development of large, complex and load-increasing systems. Security constraints such as the thermal limits of transmission lines and bus-voltage limits must be satisfied under all of a system’s operational conditions. An alternative solution to improve the security of a power system is the employment of Flexible Alternating-Current Transmission Systems (FACTS). FACTS devices can reduce the flows of heavily loaded lines, maintain the bus voltages at desired levels, and improve the stability of a power network. The Unified Power Flow Controller (UPFC) is a versatile FACTS device that can independently or simultaneously control the active power, the reactive power and the bus voltage; however, to achieve such functionality, it is very important to determine the optimal location of the UPFC device, with the appropriate parameter setting, in the power system. In this paper, a genetic algorithm (GA) method is applied to determine the optimal location of the UPFC device in a network for the enhancement of the power-system loadability and the minimization of the active power loss in the transmission line. To verify our approach, simulations were performed on the IEEE 14 Bus, 30 Bus, and 57 Bus test systems. The proposed work was implemented in the MATLAB platform.

다중 셀 네트워크에서 단말 간 직접 통신을 위한 자원 및 전력 할당 기법 (Resource and Power Allocation Method for Device-to-Device Communications in a Multicell Network)

  • 강길모;신오순
    • 한국통신학회논문지
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    • 제40권10호
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    • pp.1986-1993
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    • 2015
  • 본 논문에서는 다중 셀 셀룰러 네트워크에서 단말 간 직접 통신(Device-to-Device: D2D)의 성능을 최대화하기 위한 최적 자원 및 전력 할당 알고리즘을 제안한다. 셀룰러 단말과 D2D 단말이 통신 자원을 공유하는 상황에서 필연적으로 D2D 단말은 자신이 속한 셀뿐만 아니라 인접한 셀의 D2D 단말과 셀룰러 단말로부터 간섭을 받게 된다. 이러한 환경에서 셀 내의 간섭과 인접 셀의 간섭을 고려한 인집 기지국간의 협력적 D2D 자원 할당 방법을 제안한다. 또한 자원 할당이 이루어진 후 D2D 단말의 최적 전력 할당 문제를 제시하고 최적해를 찾는 알고리즘을 제시한다. 제안하는 D2D 자원 및 전력 할당 알고리즘은 셀룰러 단말의 성능을 보장하기 위해 D2D 단말의 송신전력 제약 조건을 갖는 상황에서 셀룰러 단말로부터의 간섭과 인접 셀 D2D 단말로부터의 간섭을 고려하여 D2D 단말이 얻을 수 있는 전송률을 최대화시킬 수 있다. 다중 셀 환경에서의 모의실험을 통하여 제안한 자원 및 전력 할당 알고리즘의 성능을 검증하고 기존의 비협력적 자원 할당 방식과 비교하여 제안한 협력적 자원 할당 방식의 성능 이득을 확인한다.

5G 이동통신을 위한 GaN RF 전자소자 및 집적회로 기술 동향 (Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication)

  • 이종민;민병규;장우진;지홍구;조규준;강동민
    • 전자통신동향분석
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    • 제36권3호
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    • pp.53-64
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    • 2021
  • As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

Analysis of Channel Flow Low During Fuelling Operation of Selected Fuel Channels at Wolsong NPP

  • I. Namgung;Lee, S.K.
    • Nuclear Engineering and Technology
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    • 제34권5호
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    • pp.502-516
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    • 2002
  • Wolsong NPP are CANDU6 type reactors and there are 4 CANDU6 type reactors in commercial operation. CANDU type reactors require on-power refuelling by two remote controlled F/Ms (Fuelling Machines). Most of channels, fuel bundles are float by channel coolant flow and move toward downstream, however in about 30% of channels the coolant flow are not sufficient enough to carry fuel bundles to downstream. For those channels a special device, FARE (Flow Assist Ram Extension) device, is used to create additional force to push fuel bundles. It has been showing that during fuelling operation of some channels the channel coolant flow rate is reduced below specified limit (80% of normal), and consequently trip alarm signal turns on. This phenomenon occurs on selected channels that are instrumented for the channel flow and required to use the FARE device for refuelling. Hence it is believed that the FARE device causes the problem. It is also suspected that other channels that do not use the FARE device for refuelling might also go into channel flow low state. The analysis revealed that the channel How low occurs as the FARE device is introduced into the core and disappears as the FARE device is removed from the core. This paper presented the FARE device behavior, detailed fuelling operation sequence with the FARE device and effect on channel flow low phenomena. The FARE device components design changes are also suggested, such as increasing the number or now holes in the tube and flow slots in the ring orifice.