• Title/Summary/Keyword: power breakdown

Search Result 920, Processing Time 0.027 seconds

Physiochemical Properties of Dual-Modified (Hydroxypropylated and Cross-linked) Rice Starches (하이드록시프로필화 후 가교화시킨 복합변성 쌀 전분의 이화학적 특성)

  • Choi, Hyun-Wook;Kim, Sang-Kab;Choi, Sung-Won;Kim, Chang-Nam;Yoo, Seung-Seok;Kim, Byung-Yong;Baik, Moo-Yeol
    • Food Engineering Progress
    • /
    • v.15 no.4
    • /
    • pp.332-337
    • /
    • 2011
  • Physicochemical properties of hydroxypropylated and cross-linked (HPCL) rice starch were investigated. Dual modification of rice starch was carried out by hydroxypropylation using propylene oxide (2, 6, and 12%) and then crosslinking using phosphorus oxychloride (0.005% and 0.02%). Swelling power of dual-modified rice starch increased at lower temperature (60$^{\circ}C$) than that of native rice starch (70$^{\circ}C$). HPCL rice starch showed slightly lower solubility (1.6-6.1%) than native rice starch (2.2-13.8%). Solubility and swelling power tended to gradually increase with increasing phosphorus oxychloride contents. RVA pasting temperature (66.2-70.8$^{\circ}C$) and peak viscosity (160.6- 171.1 RVU) of HPCL rice starch were lower than that of those of native starch (71.3$^{\circ}C$, 190.4 RVU) and decreased with increasing propylene oxide concentration. DSC thermal transitions of HPCL rice starches shifted to lower temperature and show less amylopectin melting enthalpy (11.8-9.8 J/g) than that of native rice starch (11.9 J/g). Overall, physicohemical properties of HPCL rice starches were highly dependent on hydroxypropylation rather than crosslinking.

Development of Environmentally Friendly Backfill Materials for Underground Power Cables Considering Thermal Resistivity (열 저항특성을 고려한 지중송전관로 친환경 되메움재 개발)

  • Kim, Daehong;Oh, Gidae
    • Journal of the Korean GEO-environmental Society
    • /
    • v.12 no.1
    • /
    • pp.13-26
    • /
    • 2011
  • Because the allowable current loading of buried electrical transmission cables is frequently limited by the maximum permissible temperature of the cable or of the surrounding ground, there is a need for cable backfill materials to be maintained at a low thermal resistivity during the service period. Temperatures greater than $50^{\circ}C$ to $60^{\circ}C$ may lead to breakdown of cable insulation and thermal runaway if the surrounding backfill material is unable to dissipate the heat as rapidly as it is generated. This paper describes the results of studies aimed at the development of backfill material to reduce the thermal resistivity. A large number of different additive materials were tested to determine their applicability as a substitute material. The results of Dong-rim river sand (relatively uniform) show that as water content level increases, thermal resistivity tends to decrease, whereas the thermal resistivity on dry condition is very high value($260^{\circ}C-cm/watt$). In addition, other materials(such as Jinsan granite screenings, A-2(sand and gravel mixture), E-1(rubble and granite screenings mixture) and SGFC(sand, gravel, fly-ash and cement mixture)) are well-graded materials with low thermal resistivity($100^{\circ}C-cm/watt$ when dry). Based on this research, 4 types of improved materials were suggested as the environmentally friendly backfill materials with low thermal resistivity.

A Study on the Design of Prediction Model for Safety Evaluation of Partial Discharge (부분 방전의 안전도 평가를 위한 예측 모델 설계)

  • Lee, Su-Il;Ko, Dae-Sik
    • Journal of Platform Technology
    • /
    • v.8 no.3
    • /
    • pp.10-21
    • /
    • 2020
  • Partial discharge occurs a lot in high-voltage power equipment such as switchgear, transformers, and switch gears. Partial discharge shortens the life of the insulator and causes insulation breakdown, resulting in large-scale damage such as a power outage. There are several types of partial discharge that occur inside the product and the surface. In this paper, we design a predictive model that can predict the pattern and probability of occurrence of partial discharge. In order to analyze the designed model, learning data for each type of partial discharge was collected through the UHF sensor by using a simulator that generates partial discharge. The predictive model designed in this paper was designed based on CNN during deep learning, and the model was verified through learning. To learn about the designed model, 5000 training data were created, and the form of training data was used as input data for the model by pre-processing the 3D raw data input from the UHF sensor as 2D data. As a result of the experiment, it was found that the accuracy of the model designed through learning has an accuracy of 0.9972. It was found that the accuracy of the proposed model was higher in the case of learning by making the data into a two-dimensional image and learning it in the form of a grayscale image.

  • PDF

Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method (EFG 방법으로 성장한 β-Ga2O3 단결정의 영역별 품질 분석)

  • Park, Su-Bin;Je, Tae-Wan;Jang, Hui-Yeon;Choi, Su-Min;Park, Mi-Seon;Jang, Yeon-Suk;Moon, Yoon-Gon;Kang, Jin-Ki;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.32 no.4
    • /
    • pp.121-127
    • /
    • 2022
  • β-Gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga2O3 has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga2O3 crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga2O3 ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga2O3 ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure (다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면에 따른 특성 분석)

  • Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Gwang-Hee Jung;Jin-Ki Kang;Tae-Kyung Lee;Hyoung-Jae Kim;Won-Jae Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.34 no.1
    • /
    • pp.1-7
    • /
    • 2024
  • β-Ga2O3 is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga2O3 single crystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga2O3 single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

Steady Shear Flow and Dynamic Viscoelastic Properties of Semi-Solid Food Materials (반고형 식품류의 정상유동특성 및 동적 점탄성)

  • 송기원;장갑식
    • The Korean Journal of Rheology
    • /
    • v.11 no.2
    • /
    • pp.143-152
    • /
    • 1999
  • Using a Rheometrics Fluids Spectrometer(RFS II), the steady shear flow and the small-amplitude dynamic viscoelastic properties of three kinds of semi-solid food materials(mayonnaise, tomato ketchup, and wasabi) have been measured over a wide range of shear rates and angular frequencies. The shear rate dependence of steady flow behavior and the angular frequency dependence of dynamic viscoelastic behavior were reported from the experimentally measured data. In addition, some viscoplastic flow models with a yield stress term were employed to make a quantitative evaluation of the steady flow behavior, and the applicability of these models was also examined in detail. Furthermore, the correlations between steady shear flow(nonlinear behavior) and dynamic viscoelastic(linear behavior)properties were discussed using the modified power-law flow equations. Main results obtained from this study can be summarized as follows : (1) Semi-solid food materials are regarded as viscoplastic fluids having a finite magnitude of yield stress, and their flow behavior shows shear-thinning characteristics, exhibiting a decrease in steady flow viscosity with increasing shear rate. (2) The Herschel-Bulkley, Mizrahi-Berk, and Heinz-Casson models are all applicable to describe the steady flow behavior of semi-solid food materials. Among these models, the Heinz-Casson model has the best validity. (3) Semi-solid food materials show a stronger shear-thinning behavior at shear rate region higher than a critical shear rate where a more progressive structure breakdown takes place. (4) Both the storage and loss moduli are increased with increasing angular frequency, but they have a slight dependence on angular frequency. The elastic behavior is dominant to the viscous behavior over a wide range of angular frequencies. (5) All of the steady flow, dynamic, and complex viscosities are well satisfied with the power-law model behavior. The relationships between steady shear flow and dynamic viscoelastic properties can well be described by the modified forms of the power-law flow equations.

  • PDF

Islamist Strategic Changes against U.S. International Security Initiative (미국(美國)의 대외안보전략(對外安保戰略)에 대응한 이슬람Terrorism의 전술적(戰術的) 진화(進化))

  • Choi, Kee-Nam
    • Korean Security Journal
    • /
    • no.14
    • /
    • pp.517-534
    • /
    • 2007
  • Since the beginning of human society, there have always been struggles and competitions for survival and prosperity, terrorism is not a recent phenomenon, however in modern times it has progressed to reflect the advances in civilization and power structures. At the time of the 9.11 terrorist attacks in the U.S. A., a new world order was in the process of being established after the breakdown of the Cold War era. The attacks drove both the Western and the Islamic worlds into heightened fear of terrorism and war, which threatened the quality of life of the whole mankind. Through two war campaigns against the Islamic world, it seems the U.S. has been pushing its own militaristic security road map of the Greater Middle East democratic initiative, justifying it as a means to retaliate and eradicate the terrorist threats towards themselves. However, with its five-year lopsided victories that cost the nation almost four thousand military casualties, and the war expenses that could match the Vietnam war, the U.S. does not yet seem to be totally emancipated from the fears of terrorism. Terrorism, in itself, is a means of resisting forced rules a form of alternative competition by the weak against the strong, and a way of expressing a dismissive response against dictatorial ideas or orders which allow for no normal changes. Intrinsically, the nature of terrorism is a reaction opposing power logics. Confronted with the absolute military power of the U.S., the Islamic strategies of terrorism have begun to rapidly evolve into a new stage. The new strategies take advantage of their civilization and circumstances, they train and inspire their front-line fighters on the Internet, and issue their orders through the clandestine network of the Al Qaeda operatives. These spontaneously generated strategies have been gained speed among the second, and third Islamic generations, many of whom are now spread throughout western societies. This represents a failure of the power-driven, one-sided overseas security initiatives by the U.S., and is creating a culture of fear and distrust in western societies. It is feared that the U.S. war campaigns have made the clash of religions far worse than before, and may ever lead to global ethnic separations and large-scale population movements. Eventually, it may result in the terrorist groups, enlarged and secretly supported by the huge sums of oil money, driving all mankind into a series of irreparable catastrophes.

  • PDF

Effects of Storage Form and Period of Refrigerated Rice on Sensory Properties of Cooked Rice and on Physicochemical Properties of Milled and Cooked Rice (냉장 쌀의 저장 형태 및 기간에 따른 쌀밥의 관능적 특성)

  • Lee, Ju-Hyun;Kim, Sang-Sook;Suh, Dong-Soon;Kim, Kwang-Ok
    • Korean Journal of Food Science and Technology
    • /
    • v.33 no.4
    • /
    • pp.427-436
    • /
    • 2001
  • The effects of storage form (paddy and milled rice) and storage period (1, 2, and 3 years) of rice at low temperature $(4^{\circ}C)$ on physicochemical properties of milled and cooked rice and sensory characteristics of cooked rice were investigated. The proximate compositions except moisture content of rice decreased as the storage period increased. Water binding capacity, solubility and swelling power of rice flour decreased with the extended storage period. In the amylogram, the initial pasting temperature, paste viscosity and breakdown of paddy rice flour slurry decreased after 2 years of storage. Moisture content of cooked rice increased while the amount of water evaporated during cooking decreased. These trends were obvious with the longer storage period. Lightness and yellowness of cooked rice were greatly changed after 3 years of storage, regardless of storage form. Texture profile analysis of cooked rice by Texture Analyzer revealed that hardness, fracturability, gumminess were gradually increased while adhesiveness decreased as the storage period of rice increased. A trained panel found that color intensity, intactness of grains, rancid flavor, rice bran flavor, wet cardboard flavor, hardness and chewiness of cooked rice increased with the longer storage period. However, glossiness, transparency, plumpness, puffed corn flavor, dairy flavor, boiled egg white flavor, sweet taste, adhesiveness to lips, smoothness and inner moisture decreased with the extended storage period up to 3 years. Instrumental hardness was highly correlated with sensory hardness.

  • PDF

Mixed-mode simulation of transient characteristics of 4H-SiC DMOSFETs - Impact off the interface changes (Mixde-mode simulation을 이용한 4H-SiC DMOSFETs의 계면상태에서 포획된 전하에 따른 transient 특성 분석)

  • Kang, Min-Seok;Choe, Chang-Yong;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.11a
    • /
    • pp.55-55
    • /
    • 2009
  • Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

  • PDF

Studies on Fabrication and Characteristics of $Al_{0.3}Ga_0.7N/GaN$ Heterojunction Field Effect Transistors for High-Voltage and High-Power Applications (고전압과 고전력 응용을 위한 $Al_{0.3}Ga_0.7N/GaN$ 이종접합 전계효과 트랜지스터의 제작 및 특성에 관한 연구)

  • Kim, Jong-Wook;Lee, Jae-Seung;Kim, Chang-Suk;Jeong, Doo-Chan;Lee, Jae-Hak;Shin, Jin-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.38 no.8
    • /
    • pp.13-19
    • /
    • 2001
  • We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

  • PDF