• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.64-68
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• 2002

According to the increasing power demand for the future construction of many underground cables will be required. However, construction of new ducts for power cables will be more difficult. Therefore, research work for realizing the high temperature superconducting(HTS) cable has advanced, where the development of electrical insulating system at cryogenic temperature is one of the major researches. For an electrical insulation design of HTS cable, it is important to understand not only breakdown but also partial discharge and dielectric loss($tan{\delta}$) in liquid nitrogen/paper composite insulation system. In this paper, we investigated breakdown characteristics in liquid nitrogen/paper composite insulation system for the application to HTS cable. And, we studied the breakdown characteristics of the multi-layer and butt gap of the insulation papers in liquid nitrogen. Also, we measured dielectric loss($tan{\delta}$) of the mini-model Cable made of TERLAM IPP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.101-102
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• 2005

SiC lateral power semiconductor device has high breakdown voltage and low on-state voltage drop due to the material characteristics. And, because the high breakdown voltage can be obtained, RESURF technique is mostly used in silicon power semiconductor devices. In this paper, we presents the electrical characteristics of the 4H-SiC RESURF LDMOSFET as a function of the epi-layer length, concentration and thickness. 240~780V of breakdown voltage can be obtained as a function of epi-layer length and thickness with same epi-layer concentration.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.255-261
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• 1997

In this study, pore-containing barium titanate ceramics were prepared with different porosities and pore sizes, in order to better understand how porosity and pore size affect electrical breakdown of barium titanate ceramics. A granulated barium titanate powder was mixed with three grades of commercial polymer microspheres up to 11wt%. The electrical breakdown test was performed at two different temperatures of 30.deg. C(below Tc) and 150.deg. C(above Tc) for samples immersed in a silicon oil bath using a 60kV de power supply. Electrical breakdown strength of pore containing barium titanate ceramics with porosity lower than 10% decreased as pore size and porosity increased. However, above the 10% porosity region, electrical breakdown strength decreased as the pore connectivity increased. From the experimental results, an optimum electrical breakdown model is proposed in an attempt to explain the effect of pores.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1217-1222
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• 1996

Undoped barium titanate ceramic samples with high density were produced by using both high purity hydro-thermally synthesized and oxalate-derived powders. Sintering temperature was varied in the temperature range 128$0^{\circ}C$-140$0^{\circ}C$ to control the average grain sizes of the samples. Electrical breakdown test was performed at two different temperature with 3$0^{\circ}C$(below Tc) and 15$0^{\circ}C$ (above Tc) for samples immersed in silicon oil bath using 60kV dc power supply. From the experimental results at below and above Curie temperature the grain size and thickness dependence of electrical breakdown strength for BaTiO3 ceramics was presented and breakdown behavior was also studied.

• ETRI Journal
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• v.37 no.1
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• pp.157-164
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• 2015

As GPU power consumption in smartphones increases with more advanced graphic performance, it becomes essential to estimate GPU power consumption accurately. The conventional GPU power model assumes, simply, that a GPU consumes constant power when turned on; however, this is no longer true for recent smartphone GPUs. In this paper, we propose an accurate GPU power model for smartphones, considering newly adopted dynamic voltage and frequency scaling. For the proposed GPU power model, our evaluation results show that the error rate for system power estimation is as low as 2.9%, on average, and 4.6% in the worst case.

• ETRI Journal
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• v.36 no.5
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• pp.829-834
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• 2014

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1152-1155
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• 1995

An analytic model for the optimum design of the power MOSFET considering the degradation of the breakdown voltage by the three dimensional effect is proposed. The proposed method gives the optimum design parameters such as the lateral radius of window curvature and the doping concentration of the epi-layer, which does not minimize the on-resistance but also maintains the required breakdown voltage. The analytical results are verified by the quasi 3D simulation tools, MEDICI, and it is found that the proposed method may be a good guideline for the design of power MOSFET.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.650-653
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• 1997

In large generators in power plants, stator winding insulations is exposed to a combination of thermal, electrical, mechanical, environmental stresses in service. These combined stresses cause insulation aging which leads to final insulation breakdown. In order to identify the breakdown mechanism, the stator winding insulation materials which are composed of mica-epoxy is analyzed by the component of materials with EDS, SEM techniques. We concluded that the potassium ions of mica are replaced by hydrogen ions at boundary area of mica-epoxy and/or mica-mica. It is proposed that through these phenomena, the conductive layers of potassium ions enable high voltage fields of multiple stresses to create voids and microcracks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.79-79
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• 2010

In this paper, we present results of the dielectric breakdown test in various 6.9kV power cables used in power plants. The dielectric strength of the different conditioned cables was measured by placing the sliced cable sections in silicone oil bath with needle electrode. The results were analyzed by the Weibull distribution. The shape and scale parameters of the Weibull distribution for each cable sections under test were calculated and evaluated. Collected data base was applied to deterioration trend analysis and lifetime guide was also proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.713-719
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.