• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.243-246
• /
• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.16-19
• /
• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2274-2276
• /
• 2005

Cyclic aging for 14days is performed to remove the large amount of the volatiles found in freshly manufactured cable. In this paper, we examined lightning impulse characteristics of power cable before and after cyclic aging for 14days. As the result, the breakdown voltage after aging was lower than that before aging, but the breakdown voltage after aging was higher than that before aging in TR CNCV-W $60mm^2$ power cable.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.222-226
• /
• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.10
• /
• pp.613-617
• /
• 2014

This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.16 no.1
• /
• pp.35-43
• /
• 2002

In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.1
• /
• pp.69-74
• /
• 2018

With the increasing development of industrial society and the availability of high quality electrical energy, the simplification of operation and maintenance procedures is required, in order to ensure the reliability and safety of electrical systems. In this paper, the dielectric breakdown characteristics of $N_2-O_2$ mixed gas solid insulation, which is used as an alternative to SF6 in various electric power facilities, are verified. When the gas mixture has a composition ratio similar to that of the atmosphere, the dielectric breakdown characteristics are relatively stabilized. It was confirmed that the breakdown voltage of the gas in the electrode near an equal electric field increased with increasing pressure according to Paschen's rule. The breakdown voltage of the surface increased linearly with increasing pressure, and the difference was caused by the mixing ratio of $O_2$ gas. This change in the surface insulation breakdown voltage was caused by the influence of the electrically negative $O_2$ gas and the intermolecular collision distance. In this study, the influence of the intermolecular impact distance was larger (than that in the absence of the electrically negative $O_2$ gas). The breakdown voltage relation applicable to Teflon according to the surface insulation characteristics was calculated. The characteristics of the surface insulation properties of Teflon, which is used as a solid insulation material, were derived as a function of pressure. It is thought that these results can be used as the basic data for the insulation design of electric power facilities.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.8
• /
• pp.445-450
• /
• 2000

Many successful developments and microscopic studies have been made on the high quality insulating materials. However, a little attention have given to the macroscopic interface in HV(High Voltage) insulating systems. In this study, AC interfacial breakdown strength and V-t characteristic of the interface between Epoxy/EPDM(ethylene propylene diene terpolymer) are investigated. Electrode system is designed to reduce the charges from electrodes and to have the tangential potentials along the interface between Epoxy/EPDM by FEM(finite elements method). The AC breakdown strength is observed when HV is given to the interface. It is shown that AC interfacial breakdown strength is improved by increasing interfacial pressure and oiling. In particular, it was saturated at certain interfacial pressure level. V-t characteristic is able to extend to the life time of the interface between Epoxy/EPDM. Oiling also plays a good roll in prolongation of the life time.

• Proceedings of the KIEE Conference
• /
• 1989.07a
• /
• pp.302-305
• /
• 1989

Ac, dc and impulse dielectric strengths of $LN_2$ at 0.1MPa were investigated experimentally, referring to the behavior of thermally induced bubble, which might be generated at quenching condition of immerged-cooling superconducting devices. The experimental results show that the bubble shape under electric field stress depends significantly on the applied voltage waveform. With ac voltage, the breakdown voltage of $LN_2$ falls suddenly near to one of the saturated gas at the threshold heater power of boiling onset. In control to this, the reduction of impulse breakdown voltage with heater peter is gradual and the time to breakdown depends on the existence of thermal bubble. These breakdown characteristics can be explained satisfactorily by the bubble behavior under electric fields.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.177-180
• /
• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.