• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.807-815
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• 2019

In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.26-31
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• 1989

Optical working machines are developed. the machines are to be used in the preparation of Nd-phosphate glass amplifier rod and elliptical disk amplifier plate of the high power Nd-YLF-phosphate glass laser amplifier system. In this report, the working principles of the machines are presented, and several results are shown by photographes, design drawing and the disks actually fabricated by using the machines.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.71-78
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• 2011

In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.312-318
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• 2016

This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.606-612
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• 2012

A highly efficient multi-mode balanced power amplifier(PA) structure is proposed for W-CDMA handset applications. The proposed PA has 2-stage amplifier configuration and the stage-bypass and load impedance switching techniques were applied to enhance power efficiency at medium power level as well as low output power level. Using the two techniques, four highly efficient power modes were realized. To demonstrate the usefulness of the proposed structure, a GaAs HBT balanced PA module was designed, fabricated, and measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.710-716
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• 2007

In this paper, I study on the realization of 900 MHz 1 W power amplifier using a harmonic rejection circuit. The proposed harmonic rejection circuit has improved the harmonic rejection characteristic and overcoming the problems related with frequency reproducibility on the microstrip line. The proposed power amplifier, fabricated by the type of hybrid with the epoxy PCB, was composed of driver stage and power amplifier stage with harmonic rejection circuit. The fabricated power amplifier shows -24 dBc and -30 dBc of harmonic rejection characteristic at 2nd and 3rd harmonic compared with that is not used, respectively and it could be replace the filter located between an output stage and an antenna.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.29-34
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• 2007

This paper presents a novel photonic bandgap (PBG) structure for size reduction and linearity improvement in power amplifier. The proposed structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. Throughout the experi-mental results, this structure has more broad stopband and high suppression performance than conventional three cell PBG and distorted uniplanar compact-PBG (DUC-PBG). This new PBG structure can be applied with power amplifier for linearity improvement. The 3rd intermodulation distortion (IMD3) of the power amplifier using new PBG structure is -36.16 dBc for (code division multiple access) CDMA applications. Compared with power amplifier without the proposed PBG structure, improved IMD3 is -13.49 dBc.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.665-667
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• 2010

In this paper, the method to detect the IM(Inter Modulation) components of power amplifier is proposed by using frequency down-convertor. Output signals of power amplifier which is coupled by 20dB coupler and divided by power divider are applied to RF and LO of the frequency converter. It could be found the magnitude of IM components of power amplifier as a converted DC voltage which is come from the difference between 3th and 5th IM component. The detected DC voltage values are changed from 0.72V to 0.9V when 3rd IM component level changed from -26.4dBm to +2.15dBm and 5th IM component level changed from -34.2dBm to -12.89dBm as the Vgs of 3W power amplifier is changed.

• Journal of Advanced Navigation Technology
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• v.28 no.1
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• pp.116-122
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• 2024

In this paper, course structure and course width were studied among the main performances of the system to derive the required performance of the modulation index, output power, and phase change specifications of the instrument landing system (ILS) localizer power amplifier. To satisfy the course structure's deviation standard (± 5 uA), the difference in depth of modulation (DDM) deviation standard of the carrier with sideband (CSB) amplifier was standardized to ± 1 uA(0.001 DDM). CSB 30 W power amplifier was designed, and through the modulation compensation circuit, sum in depth of modulation (SDM) is 40% ± 0.1% and DDM is ± 0.0005 DDM in the operating output range(45 dBm ~ 35 dBm). In addition, the course width and displacement sensitivity specifications were analyzed through simulation, and the ± 0.1° change applied during comissioning inspection, which is the most stringent standard, was applied. The output variation of the suppressed with sideband only ( SBO) amplifier was ± 2 mW or less, The phase was standardized to within ± 3 ° and the characteristics were satisfied. By applying a compensation circuit according to output power and temperature, stable modulation index, output, and phase characteristics were obtained.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2382-2390
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• 2007

A new polynomial-based predistortion method for linearizing nonlinear power amplifier is proposed. The proposed method finds the predistortion parameter directly without the help of postdistorter whereas most existing polynomial-based predistortion methods calculate the predistortion parameter indirectly from the prostdistorter. First, a new predistortion algorithm is derived based on the assumption that the characteristic of the amplifier is modeled by piecewise linear function. Then it is modified into a proposed method which does not require any assumption or prior knowledge of the amplifier. The proposed method is derived based on the RLS (recursive least squares) algorithm. The proposed technique is simpler to implement than the existing methods and the computer simulation demonstrates that the proposed method is more robust to the initial condition and the saturation region of the amplifier.