• 한국지구과학회지
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• 제38권6호
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• pp.421-426
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• 2017

본 연구에서는 국내 암석을 대표할 수 있는 한국산 지질 표준물질을 제작하기 위해 대상이 되는 시료를 선정하고 암석학적 연구를 실시하였다. 지질 표준물질 대상 암석으로 쥐라기 화강암인 KJG-1와 KJG-2와 함께 백악기 화강암인 KCG-1을 선정하였다. 표준적인 분쇄 과정을 통하여 분말시료를 제조하고, X-선 형광을 위한 유리 비드를 제작하였으며, 최종적으로 시료들의 주성분 원소함량을 구하였다. 분석 자료에는 평균, 표준편차 및 상대 표준편차를 함께 제시하였다. 미국지질조사소(USGS)와 일본지질조사소(GSJ)의 지질표준물질을 함께 분석하여 그들의 참값과의 비교를 통해 5% 내의 정확도를 확인하였으며, 세 시료에 대한 XRF 분석결과 상대표준편차가 3% 내외의 높은 정밀도 역시 확인하였다.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• Current Photovoltaic Research
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• 제2권4호
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• pp.177-181
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• 2014

$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.869-873
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• 2002

$Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.

• 한국세라믹학회지
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• 제42권8호
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• pp.554-560
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• 2005

The engineering ceramic needs the properties of high strength, hardness, corrosion-resistance and heat-resistance in order to withstand thermal shock or applied nonuniform stresses without failure. The densely coated porous ceramics can be used for machine component, electromagnetic component, bio-system component and energy-system component by their high-performances from superior coating properties and light-weight characteristics due to the structure including pore by itself. In this study we controlled the porosity of silica and alumina, $8.2\~25.4\%$ and $23.4\~36.0\%$, respectively, by the control of sintering temperature and starting powder size. We made bilayer structures, consisting of a transparent glass coating layer bonded to a thick substrate of different porous ceramics by a thin layer of epoxy adhesive, facilitated observations of crack initiation and propagation. The elastic modulus mismatch could be controlled using different porous ceramics as the substrate layer. Then we applied 150 N force using WC sphere with a radius of 3.18 mm by Hertzian indentation. As a result, the crack initiation in the coating layer was delayed at lower porosity in the substrate layer, and the damage in the coating layer was relatively smaller at the bilayer structure coated on higher elastic substrate.

• 한국세라믹학회지
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• 제39권6호
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• pp.604-609
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• 2002

분자 단위의 균일한 조성을 가지는 $BaCeO_3$ 나노 분말을 Pechini법에 기초한 citrate 공정을 통하여 합성하였다. 금속 이온의 chelating제로서 citric acid를, 반응 촉매로서는 ethylen glycol을 각각 사용하여 고분자 전구체를 형성시켰고, 이를 기반으로 $900^{\circ}C$의 온도에서 4시간동안 열처리하여 약 100nm의 균일한 크기와 형상을 가진, 사방정 구조의 단일상 $BaCeO_3$ 분말을 합성하는데 성공하였다. 잔존하는 미량의 $CO_3^{2-}$는 $1100^{\circ}C$ 이상의 온도에서 완전히 분해되었고, 이 때 평균 입도 는 약 2배 증가하였으나 매우 균일한 분포를 나타내었다.

• 한국세라믹학회지
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• 제36권2호
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• pp.122-129
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• 1999

알루미나 분말/(알루미나+결합체+가소제)의 비(X)와 결합체/(결합체+가소제)의 비(Y)를 각각 변화시켜 제조한 알루미나 그린 테이프의 complex modulus를 Micro Fourier Rheometer를 이용하여 측정하였다. X와 Y의 증가에 따라 Transfer function(TF) magnitude는 증가하고 Transfer function(TF) phase는 감소하는 경향을 보였으며 이로부터 X비와 Y비의 증가가 테이프의 탄성을 증가시켜는 요인임을 알 수 있었다. 온도가 증가함에 따라 알루미나 테이프의 TF magnitude는 작아지고 TF phase는 커지는 것으로부터 테이프의 점성이 증가함을 알 수 있었다. 특히 Y비에 따른 complex modulus의 변화는 유리전이온도와 관련이 있으며 변화값은 측정 조성 범위 내에서 X비에 의한 변화값보다 큼을 볼 수 있었다. complex modulus 측정을 통하여 알루미나 테이프의 성형이 가능하기 위해서는 TF phase 값이 17$^{\circ}$이상이어야 함을 유추할 수 있었다.

• 한국세라믹학회지
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• 제39권5호
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• pp.467-472
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• 2002

다이아몬드 연마 필름(diamond lapping film)으로 긴 탄소나노튜브를 절단하고 이를 Scanning Electron Microscope(SEM)으로 관찰했다. 절단된 탄소나노튜브를 ${\alpha}$-terpineol을 용매로 ethyl cellulose를 바인더로 사용하여 제조한 페이스트를 스크린 프린팅과 주사 사출법으로 유리 기판에 도포하였다. 스크린 프린팅으로 인쇄된 선에 존재하는 절단된 탄소나노튜브를 기판에 대해 수직 배향을 시키기 위하여 사포, 다이아몬드 연마 필름을 사용하여 마찰시키거나 접착성이 있는 테이프를 이용하여 접촉시켰다가 분리 하는 방법을 시도하였다. SEM으로 탄소나노튜브의 배향 특성을 관찰한 결과 주사 사출법과 스크린 프린팅 후 다이아몬드 연마 필름을 사용하여 후처리하는 간편한 방법으로 탄소나노튜브의 우수한 수직배양이 이루어짐을 알 수 있었다.

• 한국세라믹학회지
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• 제46권6호
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• pp.587-591
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• 2009

Lithium salt have been used mainly as electrolyte of thermal battery for electricity storage. Recently, The 3phase lithium salt(LiCl-LiF-LiBr) is tried to use as electrolyte of thermal battery for high electric power. It is reported that LiCl-LiF-LiBr salt have high ion mobility due to its high lithium ion concentration. Solid lithium salt is melt to liquid state at above $500{^{\circ}C}$. The lithium ion is easily reacted with support materials. Because the melted lithium ion has small ion size and high ion mobility. For the increasing mechanical strength of electrolyte pellet, the research was started to apply ceramic filter to support of electrolyte. In this study, authors used SiOC web and glass fiber filter as ceramic mat for support of electrolyte and impregnated LiCl-LiF-LiBr salt into ceramic mat at above $500{^{\circ}C}$. The fabricated electrolyte using ceramic mat was washed with distilled water for removing lithium salt on ceramic mat. The washed ceramic mat was observed for lithium ion reaction behavior with XRD, SEM-EDS and so on.

• 한국재료학회지
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• 제12권12호
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• pp.918-923
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• 2002

In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.