• Current Applied Physics
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• v.18 no.11
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• pp.1447-1450
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• 2018

The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

• ETRI Journal
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• v.34 no.6
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• pp.966-969
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• 2012

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.17-20
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• 2002

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.231.2-231.2
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• 2014

훌륭한 전기적 특성을 갖는 ZnO 기반의 산화물 반도체 박막트랜지스터(TFT)는 AMOLEDs에 적용될 수 있다. 하지만 이러한 장점에도 불구하고 산화물 반도체 TFT소자에 전압이 인가되었을 때 문턱 전압이 이동하게 되는 안정성 문제를 갖는다. 따라서 이를 해결하기 위한 연구가 널리 진행 되고 있다. 본 연구소에서는 고압 분위기 열처리를 통해 안정성의 원인으로 작용할 수 있는 산소공공(Oxygen vacancy)을 감소시키는 연구를 진행하였다. 산화물 반도체 TFT소자의 안정성을 향상시키는 대표적인 분위기 열처리로는 산소 고압 열처리(HPA)가 있으며, 또한 H2O 기체를 사용한 열처리를 통해 TFT소자의 안정성을 높일 수 있다는 연구 결과가 보고된 바 있다. 본 연구에서는 IGZO TFT소자에 H2O보다 더 큰 반응성을 갖는 산화제인 H2O2 기체를 사용한 HPA를 통해 positive bias stress(PBS) 및 negative bias illumination stress(NBIS) 조건에서 안정성이 향상됨을 확인하였고 이를 H2O 기체를 사용한 경우와 비교하였다. 그 결과 H2O2 기체를 산화제로 사용할 때 기존 H2O 기체에 비해 효과적인 PBS 및 NBIS 신뢰성 개선을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.385-388
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• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• Journal of the Korean Society of School Health
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• v.11 no.1
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• pp.63-74
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• 1998

The purposes of this study are to show in interpersonal relations what factors male students are stressed from, how they experience stress, how they cope With it in each situation, and what this results in It attempt to gam basic materials to promote male student health and positive coping methods, The subject of this study was 15 male students of C University located in Seoul and Kyeonggui-Do They were composed of 5 sophomores, 5 Juniors and 5 seniors The period for collecting materials was October 1997 to January 1998, and the interview time ranged from 50 minutes to two hours The interview frequency was one to three times as occasion demanded, The materials were analyzed by the methods and theory suggested by Strauss & Corbin (1990) The results were 130 categories grouped into 33 divisions by similarity Finally, they were united into 9 higher categories In interpersonal relations the core category of male student stress is "affliction", and it follows the course of generation-coping-resolution The types showed in the course of material analysis are as follows, (1) When the subject student is on good terms with the other and the stress is repeated- "affliction" is strong and continuous-and his ability sense is strong, he copes with "affliction" With his own will and solves It affirmatively, (2) When the subject student is on good terms with the other and the stress is repeated-so "affliction" is strong and continuous-and his ability sense is weak, he copes with "affliction" with an emotional bias and solves it negatively (3) When the subject student is on good terms with the other and the stress is temporary-"affliction" is strong and temporary-and his ability sense is strong, he copes with "affliction" with his own will and solves it affirmatively (4) When the subject student becomes estranged from the other and the stress is temporary-"affliction" is weak and temporary-and his ability sense is weak, he copes with "affliction" with an emotional bias and solves it negatively, (5) When the subject student becomes estranged from the other and the stress is repeated-"affliction" is strong-and continuous and his ability sense is strong, he copes with "affliction" with his own will and solves it affirmatively (6) When the subject student becomes estranged from the other and the stress is repeated-"affliction" is strong and continuous-and his ability sense is weak, he copes with "affliction" with an emotional bias and solves it negatively. According to the above results, the conditions of cause and effect for male students to generate "affliction" should be understood in order to help cope with stress caused by interpersonal relations A program for education and counseling should be developed for male students to strengthen their 'ability sense' in choosing coping strategies In addition, the individual estimation for ability sense should be performed when education and counseling them.

• Electronic Materials Letters
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• v.14 no.6
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• pp.749-754
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• 2018

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.26-34
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• 1997

To develop ultrathin gate oxide for ULSI MOSFETs, for the first time, we fabricated MOS capacitors with 65.angs. thick initial oxide grown by high pressure oxidation (HIPOX) at 700.deg. C in 5 atmosphere $O_{2}$ ambient and then followed by rapid thermal nitridation (RTN) in N$_{2}$O ambient. The dielectric breakdown fields of the initial HIPOX oxide are 13.0 MV/cm and 13.8MV/cm for negative and positive gate bias, respectively and are dependent on nitridation temeprature and time.The lifetimes of the HIPOX oxides extractd by TDDB method are 1.1*10$^{8}$ sec and 3.4 * 10$^{9}$ sec for negative and positive stress current, respectively. The lifetime of the HIPOX oxide dfor negative stress current increases with nitridation time in N$_{2}$O ambient at 1100.deg.C, reaching maximum value stress curretn increases with nitridation time in N$_{2}$O ambient at 1100.deg. C reacing maximum value of 1.2*10$^{9}$ sec for 30 sec of nitridation time, and then subsequently decreases at the longer nitridation time. The lifetimes of the nitrided-HIPOX oxides are longer than 10 years when nitridations are carried out longer than about 50 sec and 12 sec at 1000.deg. C, and 1100.deg. C, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.521-526
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• 1999

It was investigated that traps were generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The charge state of the traps can easily be changed by application of low voltage after the stress high voltage. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$to 814$\AA$ with capacitor areas of $10^{-3}{$\mid$textrm}{cm}^2$. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

• Journal of Home Health Care Nursing
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• v.28 no.3
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• pp.266-275
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• 2021

Purpose: This study was conducted to explore the mediating effect of menopausal symptoms in the relationship between occupational stress and quality of Life in middle-aged working women Method: Data collection was conducted from May 2019 to July 2019. A sample of 130 middle-aged working women was recruited from three cities in Korea. The collected data were analyzed using descriptive statistics, t-tset, ANOVA, Scheffé test, pearson correlation, and a three step regression analysis. The mediating effect was analyzed using PROCESS macro with a 95.0% bias corrected bootstrap confidence interval (5,000 bootstraps resampling). Results: Quality of life had a negative correlation with occupational stress and menopausal symptoms, while there was a positive correlation between occupational stress and menopausal symptoms. Menopausal symptoms showed a direct effect on quality of life through occupational stress as a mediating variable. Conclusion: These results suggest that menopausal symptoms should be considered when developing interventions to improve quality of life through occupational stress control of middle-aged working women