• Journal of Integrative Natural Science
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• 제4권1호
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• pp.11-14
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• 2011

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• Journal of Integrative Natural Science
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• 제5권1호
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• pp.27-31
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• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Journal of Integrative Natural Science
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• 제4권1호
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• pp.7-10
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• 2011

Various types of smart dust based on photonic crystal exhibiting unique reflectivity were successfully obtained by an electrochemical etching of silicon wafer using square wave currents. Smart dust containing Bragg structure obtained from the sonication of DBR porous silicon film in solution retained its optical reflectivity. Field emission scanning electron micrograph (FE-SEM) was used to measure the size of optically encoded smart dust and its size can be tuned from few hundred nanometers to few microns depending on the duration of sonication. Optical characteristics of smart dust were used to investigate a possible applications such as chemical sensors.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1779-1782
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• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

• Journal of the Korean Ceramic Society
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• 제49권6호
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• pp.625-630
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• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

• Journal of the Korean Ceramic Society
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• 제44권7호
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• pp.381-386
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• 2007

A porous reaction bonded silicon carbide (RBSC) was fabricated by a molten Si infiltration method. The porosity and flexural strength of porous RBSC fabricated in this study were dependent upon the amount of carbon source used in the SiC/carbon preform as well as the amount of Si infiltrated into the SiC/carbon preform. The porosity and flexural strength of porous RBSC were in the range of $20 vo1.{\sim}49 vo1.%$ and $38{\sim}61 MPa$, respectively. With increase of carbon contents and molten Si for infiltration, volume fraction of the pores was gradually decreased, and flexural strength was increased. The porous RBSCs fabricated with the same amount of molten Si show less residual Si around neck with increase of carbon source, as well as a new SiC was formed around neck which resulted in the decreased porosity and improvement of the flexural strength. In addition, decrease of the porosity and increase of the flexural strength were also obtained by increase of the amount of molten Si with the same amount of carbon source. However, it was found that the flexural strength of porous RBSC depends on the porosity rather than the amount of the newly formed SiC in neck phase between SiC particles used as a starting material.

• Journal of the Semiconductor & Display Technology
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• 제8권2호
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• pp.31-35
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• 2009

In the silicon wafer polishing process, the mounting stage of silicon wafer on the ceramic carrier block has been using the polishing template which utilizes the porous surface instead of traditional wax mounting method. Here in this article, the experimental study is carried out in order to study the wafer demounting by water jet and the effects of operating conditions such as the water jet flowrate and the number of water jet nozzles on the wafer demounting time. It is found that the measured wafer demounting time is inversely proportional to the water flowrate per nozzle, regardless of number of nozzles used; implying that the stagnation pressure by the water jet impingement is the dominant key factor. Additionally, by using the transparent disk instead of wafer, the air bubble formation and growth is observed under the disk, making the passage of water flow, and subsequently demounting the wafer from the porous pad.

• Analytical Science and Technology
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• 제8권4호
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• pp.637-642
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• 1995

The presence of a porous Si layer(PSL) formed on the surface of crystalline silicon by electrochemical etclling in HF solution is found to enhance the stability of n-Si photoanodes, but porous n-Si thus formed is still liable to corrode upon exposure to excitation light. To improve the stability of the porous n-Si electrodes and to reduce the photo-induced corrosion, we have examined the PEC behavior of porous n-Si modified with polyaniline(PANI) and 3 nm thick layer of Au. Comparisons were made between Au/PSL and PANl/Au/PSL photoelectrodes.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.32-32
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• 1994

• Proceedings of the Optical Society of Korea Conference
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• 한국광학회 1998년도 제15회 광학 및 양자전자 학술발표회 논문집
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• pp.240-241
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• 1998