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http://dx.doi.org/10.5012/bkcs.2013.34.6.1779

Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si  

Park, Taehee (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
Park, Eunkyung (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
Ahn, Juwon (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
Lee, Jungwoo (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
Lee, Jongtaek (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
Lee, Sang-Hwa (Department of Physics, Hanyang University)
Kim, Jae-Yong (Department of Physics, Hanyang University)
Yi, Whikun (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
Publication Information
Bulletin of the Korean Chemical Society / v.34, no.6, 2013 , pp. 1779-1782 More about this Journal
Abstract
N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.
Keywords
n-Type ZnO nanorod; Porous silicon; Photoluminescence; Electroluminescence; Field emission;
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