• 제목/요약/키워드: porous silicon

검색결과 342건 처리시간 0.022초

폼 형태의 다공성 탄화규소 지지체 표면 위에 ZSM-5 합성 (Synthesis of ZSM-5 on the Surface of Foam Type Porous SiC Support)

  • 정은진;이윤주;원지연;김영희;김수룡;신동근;이현재;권우택
    • Korean Chemical Engineering Research
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    • 제53권4호
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    • pp.425-430
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    • 2015
  • 고분자 복제방법을 이용하여 제조한 폼 형태의 다공성 탄화규소 표면에 수열 합성 방법을 적용하여 ZSM-5를 합성하였다. 다공성 탄화규소 표면으로부터 ZSM-5가 합성될 수 있도록 유도하기 위하여 합성단계에 앞서 탄화규소 표면에 산화 층을 형성하였다. 수열합성 반응은 산화처리 된 다공성 탄화규소와 TEOS, $Al(NO_3){\cdot}9H_2O$ 및 TPAOH를 원료로 사용하여 $150^{\circ}C$에서 7시간 진행하였다. XRD 및 SEM 분석을 통하여 $1{\sim}3{\mu}m$ 크기의 ZSM-5가 다공성 탄화규소 표면에 코팅되어 성장하였음을 확인하였다. BET 분석결과 ZSM-5 합성 후에 $10{\AA}$이하의 미세기공이 급격히 증가하였으며, 비표면적이 $0.83m^2/g$에서 $30.75m^2/g$으로 급격히 증가되었음을 알 수 있었다.

다공질 실리콘 양극산화막의 형성과 감습특성 (Formation and Humidity-Sensitive Characteristics of Anodically Oxidized porous Silicon Films)

  • 최복길;이동희;유지호;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1066-1068
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    • 1995
  • The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical oxidation and current density. The humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by increasing a porosity of PSL.

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PMMA가 코팅된 주름 구조를 갖는 다공성규소 격판을 이용한 광섬유 압력센서 (Fiber-Optic Pressure Sensor Using a Rugate-Structured Porous Silicon Diaphragm Coated with PMMA)

  • 이기원;조소연
    • 센서학회지
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    • 제22권3호
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    • pp.227-232
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    • 2013
  • In this research, fiber-optic pressure sensors were fabricated with rugate-structured porous silicon (RPS) diaphragms coated with PMMA (Polymethyl-Methacrylate). The reflectance spectrum of the PMMA/RPS diaphragm was almost the same as that of uncoated RPS diaphragm. However the mechanical strength of the PMMA/RPS diaphragm increased more than that of the uncoated diaphragm. As a result, the fiber-optic sensor fabricated with PMMA/RPS diaphragm could successfully detect more high pressure difference without diaphragm damage than the highest detectable pressure difference of the sensor with normal RPS diaphragm. The response data of the fiber-optic sensor recorded as a function of pressure difference were fitted by theoretical curves. During this process, elastic moduli of the used PMMA/RPS diaphragms were obtained numerically. The dynamic response properties of the fiber-optic sensor were also investigated under continuous variation of the pressure difference conditions.

Bragg 구조를 갖는 Polystyrene 박막필름의 제조방법과그들의 광학적 특성 조사 (Preparation of Polystyrene Thin Films Containing Bragg Structure and Investigation of Their Photonic Characteristics)

  • 조성동
    • 통합자연과학논문집
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    • 제3권3호
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    • pp.138-142
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    • 2010
  • Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.

다공질 실리콘의 유기가스 검지 특성 (Sensing Properties of Porous Silicon Layer for Organic Vapors)

  • 김성진;이상훈;최복길
    • 한국전기전자재료학회논문지
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    • 제15권11호
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    • pp.963-968
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    • 2002
  • In this work, porous silicon (PS) layer is investigated as a sensing material to detect organic vapors such as ethanol (called alcohol), methanol, and acetone in low concentrations. To do this, PS sensors were fabricated. They have a membrane structure and comb-type electrodes were used to detect the change of electrical resistance effectively. PS layer on Si substrates was formed by anodization in HF solution of 25%. From fabricated sensors, current-voltage (Ⅰ-Ⅴ) curves were measured for gases evaporated from 0.1 to 0.5% organic solution concentrations at 36$\^{C}$. As the result, all curves showed rectifying behavior due to a diode structure between Si and the PS layer. The conductance of most sensors increased largely at high voltage of 5V, but the built-in potential on the measured Ⅰ-Ⅴ curve was lowered inversely by the adsorption effect of the organic vapors with high dipole moment.

Properties of Silicon Carbide-Carbon Fiber Composites Prepared by Infiltrating Porous Carbon Fiber Composites with Liquid Silicon

  • Lee, Jae-Chun;Park, Min-Jin;Shin, Kyung-Sook;Lee, Jun-Seok;Kim, Byung-Gyun
    • The Korean Journal of Ceramics
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    • 제3권4호
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    • pp.229-234
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    • 1997
  • Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

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초박형 태양전지의 Porous Si Layer Transfer 기술 적용을 위한 전기화학적 실리콘 에칭 (Electrochemical Etching of Silicon in Porous Silicon Layer Transfer Process for Thin Film Solar Cell Fabrication)

  • 이주영;한원근;이재호
    • 마이크로전자및패키징학회지
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    • 제16권4호
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    • pp.55-60
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    • 2009
  • 불산과 에탄올 혼합용액에서 전기화학적 에칭을 통하여 다공성 실리콘 층을 제작하였다. 에칭 시 인가된 초음파의 주파수, 전류밀도, 에칭시간의 변화에 따른 다공성 실리콘 층의 변화를 확인하였다. 초음파를 가해주지 않은 시편은 표면에 특별한 변화가 일어나지 않았으나, 초음파 진동자의 주파수가 40 kHz와 130 kHz인 초음파 발생조에서 실험한 시편을 관찰한 결과, 가해준 초음파의 주파수가 높을수록 다공성 실리콘 층의 기공의 크기가 더 커지고 실리콘 표면에서의 에칭이 더 균일하게 일어났다. 후면접촉 에칭조와 current shield를 이용한 결과 다공성 실리콘 층 전면에 걸쳐 균일하게 기공이 발생하였다. 다공성 실리콘 층의 기공의 크기는 전류밀도가 증가함에 따라 함께 증가하였고, 에칭 시간에는 영향을 받지 않았다.

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구형 나노 실리카를 사용한 다공성 실리콘/탄소 음극소재의 전기화학적 특성 (Electrochemical Characteristics of Porous Silicon/Carbon Composite Anode Using Spherical Nano Silica)

  • 이호용;이종대
    • Korean Chemical Engineering Research
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    • 제54권4호
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    • pp.459-464
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    • 2016
  • 본 연구에서는 리튬이온 전지용 실리콘 음극소재의 사이클 안정성 및 율속 특성 향상을 위해 다공성 실리콘/탄소 복합소재의 전기화학적 특성을 조사하였다. 나노 실리카 제조는 스토버 방법을 사용하고 교반 속도, 교반 온도 및 $NH_3$/TEOS 비율을 조절 하여 100~500 nm 크기의 구형 실리카를 합성하였다. 구형 나노 실리카의 마그네슘 열환원과 산처리 과정을 통해 다공성 실리콘을 얻고, 제조된 다공성 실리콘에 Phenolic resin을 탄소전구체로 사용하여 최종적으로 다공성 실리콘/탄소 활물질을 합성하였다. 또한 $LiPF_6$ (EC:DMC:EMC=1:1:1 vol%) 전해액에서 다공성 실리콘/탄소 음극소재의 충 방전, 순환전압 전류, 임피던스 테스트 등의 전기화학적 특성을 조사 하였다. 다공성 실리콘/탄소 복합소재의 음극활물질로서 코인 전지의 성능을 조사한 결과 초기용량 및 40사이클 용량 보존율은 각각 2,006 mAh/g, 55.4%를 나타내었다.

Diffusion coefficient estimation of Si vapor infiltration into porous graphite

  • Park, Jang-Sick
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.190.1-190.1
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    • 2015
  • Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

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알루미늄 첨가가 다공질 Self-Bonded SiC 세라믹스의 기공률과 꺾임강도에 미치는 영향 (Effect of Aluminum Addition on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics)

  • 임광영;김영욱;우상국;한인섭
    • 한국세라믹학회지
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    • 제46권5호
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    • pp.520-524
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    • 2009
  • Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, Si, C as starting materials and Al as an optional sintering additive. The effect of Al addition on the porosity and strength of the porous SBSC ceramics were investigated as functions of sintering temperature and Si:C ratio. The porosity increased with decreasing the Si:C ratio and increasing the sintering temperature. It was possible to fabricate SBSC ceramics with porosities ranging from 37% to 44% by adjusting the Si:C ratio and the sintering temperature. Addition of Al additive promoted densification and necking between SiC grains, resulting in improved strength. Typical flexural strengths of SBSC ceramics with and without Al addition were 44 MPa and 34MPa, respectively.