• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.792-796
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• 2002

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.149-155
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• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.211-214
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• 2009

A new porous silicon (PSi) microcavity sensor for the detection of volatile organic compounds (VOCs) was developed. PSi microcavity sensor exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer. When PSi was fabricated into a structure consisting of two high reflectivity muktilayer mirrors separated by an active layer, a microcavity was formed. This PSi microcavity is very sensitive structures. Reflection spectrum of PSi microcavity indicated that the full-width at half-maximum (FWHM) was of 10 nm and much narrower than that of fluorescent organic molecules or quantum dot. The detection of volatile organic compounds (VOCs) using PSi microcavity was achieved. When the vapor of VOCs condensed in the nanopores, the refractive indices of entire particle increased. When PSi microcavity was exposed to acetone, ether, and toluene, PSi microcavity in reflectivity was red shifted by 28 nm, 33 nm, and 20 nm for 2 sec, respectively.

• Journal of Integrative Natural Science
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• v.3 no.4
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• pp.210-214
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• 2010

Relationship between etch current and morphology and porosity of porous silicon (PS) has been investigated. The gravimetric method is applied to measured the porosity of PS. As the current density increase, the silicon dissolution rate increases, resulting in a higher porosity and etching rate. The result shows that linear dependence of PS porosity and etching rate as a function of current density. The morphology of porous silicon was investigated by using cold field emission scanning electron micrograph (FE-SEM). The size of pores formed during anodization is predominantly controlled by the current density, with an increase in the pore size corresponding to an increase in the current density.

• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.24-27
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• 2010

Multi-functionalized rugate porous silicon (PSi) for biosensor was developed by hydrosilylation with silole and its further reaction with biotin groups. PSi was generated by an electrochemical etching of silicon wafer in aqueous ethanolic HF solution PSi prepared by using etching conditions showed that many sharp spectral lines can be obtained in the optical reflectivity spectrum. 1,1-hydrovinyl-2,3,4,5-tetraphenylsilole was obtained from the reaction of 1,1-dilithio-2,3,4,5-tetraphenyl-1,3-butadiene with dichlorovinylsilane. Multi-functionalized PSi with silole and biotin groups was characterized by UV-vis absorption spectroscopy, Ocean optics 2000 spectrometer, and fluorescence spectroscopy. Optical characteristics such as reflectivity and photoluminescence (PL) were observed. An increase of the reflection wavelength in the reflectivity spectrum by 20 nm was observed, indicative of a change in refractive indices induced by hydrosilylation of the silole and biotin groups to the rugate PSi. This red-shift was attributed to the replacement of some of the Si-H group of fresh rugate PSi with silole and biotin group.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.289-293
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• 1999

The nonlinear susceptibilities of the porous silicon surface were determined from the second harmonic generation. The value of nonlinear susceptibility, ${\chi}^{(2)}_{zzz}$ was $1.04{\times}10_{-7}$ esu which had an intensity of two orders of magnitude greater than that of silicon crystal wafers. The orientation angle of absorbed molecules on the porous silicon surface was ${16.8}^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.152-153
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• 2006

본 연구에서는 태양전지 표면에 입사된 광자의 반사손실을 최소화하기 위한 방법으로써 기판 표면에 다공성 실리콘층을 이용한 반사방지막 (Anti-Reflection Coating, ARC)을 형성하는 실험을 하였다. 다공성 실리콘(Porous silicon, PSi)은 실온에서 일정 비율로 만든 전해질 용액($HF-C_2H_5OH-H_2O$)을 사용하여 실리콘 표면을 양극산화처리 함으로써 단순 공정만으로 실리콘 기판의 반사율을 높일 수 있다. 또한 새로운 레이어(layer)없이 기존 기판을 식각시켜 만들기 때문에 박막형 태양전지를 제작시 적용이 용이하다. 저비용, 단순공정의 이점을 살려 전류밀도에 따른 PSi의 반사방지막으로써의 특성을 비교 분석하였다.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.552-557
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• 2006

A low temperature processing route for fabricating porous SiC ceramics by carbothermal reduction has been demonstrated. Effects of expandable microsphere content, sintering temperature, filler content, and carbon source on microstructure, porosity, compressive strength, cell size, and cell density were investigated in the processing of porous silicon carbide ceramics using expandable microspheres as a pore former. A higher microsphere content led to a higher porosity and a higher cell density. A higher sintering temperature resulted in a decreased porosity because of an enhanced densification. The addition of inert filler increased the porosity, but decreased the cell density. The compressive strength of the porous ceramics decreased with increasing the porosity. Typical compressive strength of porous SiC ceramics with ${\sim}70%$ porosity was ${\sim}13 MPa$.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.243-246
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• 2001

At atmosphere photoluminescence(PL) of porous silicon(PSi) decreases and peak wave number of PL is shifted to blue region. When PS is used light detector, the ageing effects are negative phenomena. For controling ageing effects, this paper uses Polymers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.167-167
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• 2015

SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si diffusion coefficient is estimated by comparing experiment results with quadratic equation obtained by Fick's second law.