• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.9
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• pp.349-354
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• 1985

The conducting currents of polypropylene film was measured a function with electric fields at temperature of 25,35,45( C). It appears that there are four regions of conducting currents, depending upon the strength of the applied electric field` ohmic region based on ionic conduction, Poole-Frenkel region, Schottky region and negative resistance region. Several information of dielectric constant and potential barrier height were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.170-170
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• 2009

From the analysis of current density-luminance-voltage characteristics of the double layered device in ITO/N,N'-diphenyl-N-N'bis(3-methylphenyl)-1,1'biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/Al, we divided the conductive mechanism by four region according to applied voltage. We have obtained a coefficient of ${\beta}_{ST}$ in schottky region (I) is $4.14{\times}10^{-24}$ at the electric field of $3.2{\times}10^5$ V/cm, a slope in negative resistance region (II) appears negative properties decreasing the current density J for proportional in -1.58 square at a electric field of $7.3{\times}10^5$ V/cm. A coefficient of ${\beta}_{PF}$ in Poole-Frenkel region (III) is $8.28{\times}10^{-24}$ at the electric field of $8.4{\times}10^5$ V/cm, it was confirm어 that ${\beta}_{PF}$ is agrees with a value that relates with ${\beta}_{ST}$ such as ${\beta}_{PF}=2{\beta}_{ST}$ as the ${\beta}_{PF}$ and 2 ${\beta}_{ST}$ satisfied a theoretical prediction. And it was obtained a potential barrier of ${\Phi}_{FN}$ in Fower-Nordheim region(IV) is 0.3 eV at the electric field of $11.2{\times}10^5$ V/cm.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.364-371
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• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• ETRI Journal
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• v.27 no.1
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.229-230
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• 2008

The investigations included the measurements of volume currents and also internal space charges on epoxy samples of mm thicknesses. The current versus time relations were shown to correspond well with classical forms of dielectric response such as the Curie-von Schweidler model. After the time transient, near steady currents were extremely small and exhibited a significant temperature dependence, similar in relation to the Poole-Frenkel hoping transport model. Equivalent resistances were on the order of $10^{19}$ ohms and represent very weak charge transport. Electrically stimulated acoustic waves were used to quantify the small internal charges that would accumulate within the epoxy. There was a notable homocharge near both anode and cathode. The dielectric response and the internal charge were related to show a consistent model for charge transport within unfilled epoxy.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.45-52
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• 2000

The conduction characteristics in Oriented polypropylene (OPP) film were studied over electric field intensities between 10 M/V m and 300 M/V m . The range of the conduction characteristics was divided in to five regions with increasing field intensity. Particularly, in the region from 70 Mb/m to 82 MV/m voltage-controlled negative resistance was displayed. In the negative resistance region current oscillations were also observed the negative resistance characteristics could by explaine by Gibbons theory.