• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.80-83
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• 2003

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with in-situ photoalignment method on polyimide (PI) surfaces using thin plastic substrates. The LC aligning capabilities and pretilt angle of the thin plastic substrates by in-situ photoalignment method were better than that of the glass substrate by general photoalignment. Also, the LC pretilt angle increased with increasing healing temperature and exposure time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.451-452
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• 2005

In this study, the threshold voltage and the response time of thermal stressed TN-LCDs showed the same performances on none thermal stressed TN-LCDs. There was little change in TN cells. Also, while increasing thermal stress time, the transmittances of TN-LCDs on the rubbed PI surface were almost the same, But the thermal stability of TN cell was deteriorated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.517-518
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• 2006

• Proceedings of the Korean Fiber Society Conference
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• 2003.10b
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• pp.223-224
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• 2003

Polyimides (PI) are widely used in applications ranging from microelectronics to aerospace. Due to their insulating nature, significant accumulation of electrostatic charge may result on their surface, causing local heating and premature degradation to electronic components or space structures. Over the past decade, several publications have been made in fabrication and charaterization of CNT nanocomposites [1,2]. (omitted)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.883-886
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• 2000

We have developed a novel vertical-alignment(VA) - 1/6$\pi$ mode that provides a wide viewing angle for nematic liquid crystal (NLC) with negative dielectric anisotropy on a homeotropic polyimide (PI) surfaces. Good voltage-transmittance curves were achieved with the new VA - 1/6$\pi$ cell model without a negative compensation film. The viewing angle of a new VA -1/6$\pi$ cell without a negative compensation film was wider than that of a conventional VA cell. Finally, the wide viewing angle using the new VA-1/6$\pi$ cell mode can be achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.12-16
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• 2020

Indium tin oxide (ITO) films were prepared onto transparent polyimide (PI) substrates by RF magnetron sputtering at room temperature. The deposited ITO films were heat-treated at various temperatures (50, 100, 150, and 200℃). The effect of post heat-treatment temperature on structural, electrical and optical properties of ITO films were investigated. It was found that the as-deposited ITO films were amorphous and the degree of crystallinity and the grain size increased with an increasing heat-treatment temperature, which led to the increase in carrier concentration and mobility. The electrical resistivity of as-deposited ITO films was 2.73 × 10^-3 Ω·cm. With the heat-treatment temperature increasing from 50 to 200℃, the electrical resistivity decreased from 2.93 × 10^-3 to 1.21 × 10^-4 Ω·cm. The average transmittance (400~800 nm) of the ITO deposited PI substrates was decreasing with post heat-treatment temperature and was above 81 % for the temperatures 50~150℃ and decreased considerably to 78 % at 200℃.

• Polymer(Korea)
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• v.34 no.5
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• pp.480-484
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• 2010

A series of poly(amic acid)s(PAAs) was prepared by reacting 4,4'-(4,4'-isopropylidenediphenoxy) bis(phthalic anhydride)(BPADA) as the anhydride monomer and 2,2'-bis(trifluoromethyl) benzidine (TFB), bis(3-aminophenyl)sulfone (APS), 4,4'-methylenebis-(2-methylcyclohexylamine) (MMCA), or bis[4-(3-aminophenoxy) phenyl] sulfone (BAPS) as the amine monomer with 5 mol% melamine in N,N-dimethylacetamide (DMAc). Colorless and transparent polyimide (PI) films were obtained by casting the PAAs at various heat treatment temperatures. The thermo-mechanical properties and optical transparency of the PI films were investigated. The thermal properties of the PI films were examined using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and thermomechanical analysis (TMA), and their optical transparency were measured by spectrophotometry. The coefficient of thermal expansion (CTE) and yellow index (YI) values of all samples were in the range of $48.53-64.24ppm/^{\circ}C$ and < 3.0, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.414-414
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• 2007

In this study, Liquid Crystal (LC) alignment and tilt angle generation in Nematic Liquid Crystal (NLC) with negative dielectric anisotropy on the homeotropic PI surface with new ion beam exposure are reported. Also. high density of ion beam energy (DuoPIGatron type Ar ion gun) is used in this study. The tilt angle of NLC on the homeotropic Polyimide (PI) surface for all incident angles is measured about 38 degree and this has a stabilization trend. And the good LC alignment of NLC on the PI surface with ion beam exposure of $45^{\circ}$ incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of $45^{\circ}$ had a tendency to decrease as ion beam energy density increase. The tilt angle could be controlled from verticality to horizontality. Also, the LC aligning capabilities of NLC on the homeotropic PI surface according to ion beam energy has the goodness in case of more than 1500 eV. Finally. the superior LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved. For OCB(Optically Compensated Bend) mode driving, we can need pretilt angles control for fast response time. In this study, We success pretilt angles control. Consequently, this result can be applied for OCB mode.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.