• The korean journal of orthodontics
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• v.36 no.3 s.116
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• pp.207-217
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• 2006

Although ceramic brackets have been used widely for improved esthetics during treatment, ceramic brackets have some inherent problems; brittleness, attrition of the opposing teeth and high frictional resistance. This study was performed to understand the frictional resistance of the ceramic brackets, as well as to be a helpful reference for finding the solutions to the problem of frictional resistance. Three different kinds of brackets were used; metal bracket, polycrystalline ceramic brackets with a metal slot to reduce the high frictional resistance and monocrystalline ceramic brackets. The brackets were tested with a $.019{\times}.025$ stainless steel wire with a second order angulation of $0^{\circ}\;and\;10^{\circ}$, and the static and kinetic frictional forces were measured on the universal testing machine. The results of this study showed that the ceramic brackets, especially the monocrystalline ceramic bracket without a metal slot, generated higher frictional resistance than the metal bracket, and the frictional resistance was increased as the angulation between the bracket slot and the wire increased. Therefore, the development of the ceramic bracket with reduced frictional resistance and the prevention of excessive crown tipping during orthodontic treatment will lead to the simultaneous attainment of more efficient and improved esthetic treatment goals.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.99.2-99.2
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• 2011

Transparent conducting oxides (TCOs) supported on glass are widely used as substrates in PEC studies for photovoltaic hydrogen generation applications However, high sheet resistane ($10{\sim}15{\Omega}/cm^2$) and fragileness of glass-supported TCO substrates are the obstacles to produce the large area PEC cells. Such internal sheet resistance is detrimental to efficient collection of photogenerated majority charge carriers at the photoactive material and electrolyte interface. Moreover, these TCO substrates are very expensive and consume about 40~60% cost of the devices. Hence, a low sheet resistance of the substrate is a key point in improving the performance of PEC devices. Metallic substrates coated with a photoactive material would be a good choice for efficient charge collection. Such metal substrates based photanodes are best candidate for large-scale phtoelectrochemical water splitting for hydrogen generation. In this study, we report the enhanced PEC performance of $WO_3$ film on metal(chemical etched, bare) substrate. It is proposed that interface between $WO_3$ and the metal substrate is responsible for efficient charge transfer and demonstrated significant improvement in the photoelectrochmical performance. X-ray diffration and FESEM suduies reveled that $WO_3$ films are monoclinic, porous, polycrystalline with average grain size of ~50nm. Photocurrent of $WO_3$ prepared on metal substrates was measured in 0.5M $H_2SO_4$ electroyte under simulated $100mW/cm^2$ illumination.

• Bulletin of the Korean Chemical Society
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• v.24 no.1
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• pp.49-54
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• 2003

TiO₂nanoparticles were synthesized using the metallorganic chemical vapor deposition process. Particles with and without metal ion dopants were obtained. X-ray photoelectron and energy dispersive X-ray spectroscopic measurements confirmed the stoichiometry of the TiO₂nanoparticles. X-ray diffraction patterns showed a polycrystalline anatase structure of TiO₂. Transmission electron microscopy revealed that these particles are of nanoscale dimensions. Exact particle size and size distribution analyses were carried out by dynamic light scattering. The average particle size was determined to be 22 nm. The nanosize particles provided large surface area for photocatalysis and a large number of free surface-charge carriers, which are crucial for the enhancement of photocatalytic activity. To improve the photocatalytic activity, metal ions, including transition metal ions $(Pd^{2+},\;Pt^{4+},\;Fe^{3+})$ and lanthanide ion $(Nd^{3+})$ were added to pure TiO₂nanoparticles. The effects of dopants on photocatalytic kinetics were investigated by the degradation of 2-chlorophenol under an ultraviolet light source. The results showed that the TiO₂nanoparticles with the metal ion dopants have higher photocatalytic activity than undoped TiO₂. The $Nd^{3+}$ ion of these dopant metal ions showed the highest catalytic activity. The difference in the photocatalytic activity with different dopants is related to the different ionic radii of the dopants.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• Advances in nano research
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• v.5 no.4
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• pp.359-372
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• 2017

Metallic copper nanoparticles were synthesised by reduction of copper ions in aqueous solution, and metal-metal bonding by using the nanoparticles was studied. A colloid solution of metallic copper nanoparticles was prepared by mixing an aqueous solution of $CuCl_2$ (0.01 M) and an aqueous solution of hydrazine (reductant) (0.2-1.0 M) in the presence of 0.0005 M of citric acid and 0.005 M of n-hexadecyltrimethylammonium bromide (stabilizers) at reduction temperature of $30-80^{\circ}C$. Copper-particle size varied (in the range of ca. 80-165 nm) with varying hydrazine concentration and reduction temperature. These dependences of particle size are explained by changes in number of metallic-copper-particle nuclei (determined by reduction rate) and changes in collision frequency of particles (based on movement of particles in accordance with temperature). The main component in the nanoparticles is metallic copper, and the metallic-copper particles are polycrystalline. Metallic-copper discs were successfully bonded by annealing at $400^{\circ}C$ and pressure of 1.2 MPa for 5 min in hydrogen gas with the help of the metalli-ccopper particles. Shear strength of the bonded copper discs was then measured. Dependences of shear strength on hydrazine concentration and reduction temperature were explained in terms of progress state of reduction, amount of impurity and particle size. Highest shear strength of 40.0 MPa was recorded for a colloid solution prepared at hydrazine concentration of 0.8 M and reduction temperature of $50^{\circ}C$.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.2
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• pp.25-30
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• 2015

This study involved the fabrication of precision machine tools using a polycrystalline diamond tip [sintered PCD and cemented carbide (WC-Co) tip] and WC-Co shanks via diffusion bonding with a paste-type nickel alloy filler metal. Diffusion bonding is a process whereby two materials are pressed together at high temperature and high pressure for a sufficient period of time to allow significant atomic diffusion to occur. For smooth progress, a filler metal of nickel alloy was used at the interface. Optical microscopy images were used to observe the copula of the bonded layer. It was confirmed that cracks occurred near the junction in all cases. The tensile strength of the bond was measured using a universal testing machine (UTM) with WC-Co proportional test specimens.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.477-481
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• 2004

High quality polycrystalline silicon is very critical part of the high quality thin film transistor(TFT) for display devices. Metal induced lateral crystallization(MILC) is one of the most successful technologies to crystallize the amorphous silicon at low temperature(below $550^{\circ}C$) and uses conventional and large glass substrate. In this study, we observed that the MILC behavior changed with abrupt variation of the amorphous silicon active pattern width. We explained these phenomena with the novel MILC mechanism model. The 10 nm thick Ni layers were deposited on the glass substrate having various amorphous silicon patterns. Then, we annealed the sample at $550^{\circ}C$ with rapid thermal annealing(RTA) apparatus and measured the crystallized length by optical microscope. When MILC progress from narrow-width-area(the width was $w_2$) to wide-width-area(the width was $w_1$), the MILC rate decreased dramatically and was not changed for several hours(incubation time). Also the incubation time increased as the ratio, $w_1/w_2$, get larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transformation from amorphous silicon to crystalline silicon.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.287-290
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• 2005

The shearing and punching processes are analyzed with the finite element method using an isotropic material model. The experimental result in the punching process shows that final radiuses of sheet metal according to the rolling direction and transverse direction are different because of the material anisotropy. The material anisotropy is induced by complicated large deformation in the polycrystalline aggregate. The contact region between the punch and sheet metal experiences severe deformation such as shear, compression and tension in the punching process. In this paper, the analysis of punching process for Al 1100 is performed with the ABAQUS Standard. The analysis of texture development and evolution is carried out based on the deformation history in the punching process. The deformation histories are extracted by UMAT in the ABAQUS Standard. The torture development is investigated with the pole figure and yield surface during the punching process.