• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.246-247
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.62-63
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of $30cm2/V{\cdot}s$, on/off ratio of 105 and threshold voltage of 5 V.

• Transactions on Electrical and Electronic Materials
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• 제9권5호
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• pp.193-197
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• 2008

On the purpose of increasing resonant frequency without sacrificing quality factor as well as much decreasing dimensions, corrugated micro beam resonator based on polycrystalline 3C-SiC films is the applicable solution. In this work, appropriate corrugated structure is suggested to increase resonant frequency of resonators. Micro beam resonators based on 3C-SiC films which have a two-side corrugation along the length of beams were simulated by finite element method and compared to a same-size flat rectangular. With the dimension of 36x12x0.5 ${\mu}m^{3}$, the flat cantilever has resonant frequency of 746 kHz. Meanwhile, with this size but corrugation width of 6 ${\mu}m$ and depth of 0.4 ${\mu}m$, the corrugated cantilever reaches the resonant frequency at 1.252 MHz.

• 한국진공학회지
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• 제9권1호
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• pp.60-68
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• 2000

The optical constants ($E_g^d$, n, K) of the polycrystalline CdSe thin films deposited on the glass substrate by the electron-beam evaporation technique are determined over 400~2,500 nm photon wavelengths. In order to explain the variation of the optical contents with film thickness and substrate temperatures, the surface microstructural parameter are investigated by AFM (atomic forced microscope( images for the films deposited by different growth conditions. It is shown that the variations of optical constants are close related to changes of the surface morphology of the CdSe thin films. The decrease in the band gap with film thickness is connected with quantum size effects due to increase of the grain size. The refractive index of CdSe films decrease with increasing the grain size of the films, and the dispersion of the refractive index followed a single oscillator model according to the Sellmeier formulation.

• 소성∙가공
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• 제21권4호
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• pp.252-257
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• 2012

Crystallographic texture evolution during forming processes has a significant effect on the anisotropic flow behavior of crystalline material. In this study, a crystal plasticity finite element method (CPFEM), which incorporates the crystal plasticity constitutive law into a three-dimensional finite element method, was used to investigate texture evolution of a face-centered-cubic material - an aluminum alloy. A rate-dependent polycrystalline theory was fully implemented within an in-house program, CAMPform3D. Each integration point in the element was considered to be a polycrystalline aggregate consisting of a large number of grains, and the deformation of each grain in the aggregate was assumed to be the same as the macroscopic deformation of the aggregate. The texture evolution during three different deformation modes - uniaxial tension, uniaxial compression, and plane strain compression - was investigated in terms of pole figures and compared to experimental data available in the literature.

• Journal of Microbiology
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• 제41권4호
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• pp.345-348
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• 2003

The bio-mediated production of calcite crystals by calcinogenic bacteria has great applicable value for the restoration of deteriorated calcareous monuments, because of its high purity and coherency. An investigation of the conditions for calcite production by an alkalophilic Bacillus amyloliquefaciens CMB01 strain was made. Optimal calcite precipitation occurred when the bacterium was cultured at pH 8.0 and 30$^{\circ}C$, and in B4 medium that consisted of 0.4% yeast extract, 0.5% glucose, and 1.5% calcium acetate. Calcium ion of the bacterially induced calcite was analyzed by an inductively coupled plasma (ICP) spectrophotometer. Optical and scanning electron microscopy (SEM) of the calcite revealed a typical rombohedral polycrystalline structure.

• Bulletin of the Korean Chemical Society
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• 제7권1호
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• pp.39-41
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• 1986

The polycrystalline epr spectrum of ${\alpha}-1,\;2-[PV(IV)VW_{10}O_{40}]^{6-}$ doped into host crystals and its solution spectrum are reported. The solution spectrum consists of fifteen lines, indicating that the unpaired electron is hopping fast between the two vanadium atoms. The polycrystalline spectrum, which consists of three sets of fifteen lines, was analyzed as a spectrum of an I = 7 system and the epr parameters were determined. The spectrum cannot be interpreted by assuming that each line appears at the average magnetic field of two hyperfine lines expected for two uncoupled vanadium atoms.

• Bulletin of the Korean Chemical Society
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• 제9권6호
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• pp.388-393
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• 1988

The chemisorption of CO molecules on polycrystalline nickel surface has been studied by investigating the resulting chemisorbed species with the X-ray photoelectron spectroscopy at temperatures between 300K through 433K. It is found that the adsorbed CO molecules are dissociated by the simple C-O bond cleavage as well as by the disproportionation reaction at temperatures above 373K. The former type dissociation is more favored at low coverages and at elevated temperatures. The isotherms of CO chemisorption are obtained from the xps intensities of C 1s peaks, and then the activation energy of the dissociative adsorption is estimated as a function of the CO exposure. These activation energies are extrapolated to zero coverage to obtain the activation energy of chemisorption in which thermal C-O bond cleavage takes place. The value obtained is 38.1 kJ/mol.

• Bulletin of the Korean Chemical Society
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• 제16권7호
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• pp.588-591
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• 1995

Single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were grown by chemical vapor transport technique. Powdered polycrystalline samples of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were also prepared by the direct combination of the elements. The chemical composition of these single crystals was determined by comparing their lattice parameters with those of the standard polycrystalline samples. The IR transmission range of single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) is slightly narrower than that observed for pure ZnSe. However, these materials still show good transmission in the long-wavelength IR range. The addition of small amounts of CuMSe2 (M=Al, Ga, or In) considerably increases the hardness of ZnSe.