• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.76-82
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• 2004

Crystallographic and magnetic properties for Brownmillerite-type oxides $Ca_{1-x}$Sr$_{x}$FeO$_{2.5}$ (x = 0, 0.3, 0.5, 0.7, 1.0) were investigated using x-ray diffraction (XRD) and Mossbauer spectroscopy. Polycrystalline samples were prepared by conventional solid-state reaction method. Information on exact crystalline structures, lattice parameters, bond lengths and bond angles were obtained by refining their XRD profiles using a Rietveld method. The crystal structures were found to be all orthorhombic with space group Icmm (x = 0, 0.3) and Icmm (x = 0.5, 0.7, 1.0) The lattice parameters increased monotonically with increasing Sr concentration. Both the tetrahedral and the octahedral sites were considerably distorted and elongated along b-axis. While bond lengths and bond angles O-Fe-O tend to increase minutely with the increase of Sr content, bond angles Fe-O-Fe decreased accordingly. The Mossbauer spectra showed two sets of sharp sextets originating from ferric ions occupying the tetrahedral and the octahedral sites under the magnetic transition temperature T$_{N}$. Regardless of the compositions x, the electric quadrupole splittings were -0.3 mm/s and 0.4 mm/s for the octahedral and the tetrahedral site, respectively. Above T$_{N}$, the Mossbauer spectra showed the paramagnetic doublets whose electric quadrupole splittings were about 1.6 mm/s, irrespective of compositions x. T$_{N}$ was found to decrease monotonically with the increase of Sr concentration. Ratios of absorption area for the two sites were almost 1:1 up to as high as 0.95 T$_{N}$ for all x. The result of the Debye temperature indicated that the inter-atomic binding force for the Fe atoms in the tetrahedral site was stronger than that for the octahedral site.hedral site.

• The korean journal of orthodontics
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• v.39 no.4
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• pp.234-247
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• 2009

Objective: The purpose of this study was to evaluate the shear bond strength of rebonded ceramic brackets according to each condition and find an appropriate method to rebond ceramic brackets with proper shear bond strength in clinical practice. Methods: The study consisted of 12 experimental groups, according to the types of brackets, debonding methods, and treatment methods of the bracket base. Shear bond strength was measured, and adhesive residues left on the tooth surface were assessed. The base of the bracket was examined under scanning electron microscopy. Results: The shear bond strength of the monocrystalline ceramic bracket group was significantly higher than thatof the polycrystalline bracket group with only sandblasting (p < 0.05). There was no significant difference in shear bond strength between groups that used rebonded brackets which were debonded with shear force and debonded with laser (p > 0.05). The shear bond strength of the sandblasted/silane group was significantly higher than that of the selectively grinded group with a low-speed round bur and the sandblasted only group (p < 0.001). The retentive structure was more presented in groups where laser was applied than in groups where shear force was applied to debond brackets prior to rebonding. The bracket bases which were treated before rebonding presented smoother surfaces than new brackets. Conclusions: Shear bond strength could be increased by applying a silane coupling agent after sandblasting before rebonding. Also, the bond strength of the selectively grinded group with a low-speed round bur and the sandblasted group showed acceptable bond strength for clinical orthodontic treatment.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.621-627
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• 1998

The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.190-198
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• 2013

Purpose: The purposes of this study were to investigate osseointegration around zirconia implants which had machined or alumina sandblasted surface, and to compare the results with titanium implants. Materials and methods: The study was performed on the tibia of 6 pigs. Three types of implants were investigated: group T-titanium implant, group Z-machined zirconia implant, group ZS-alumina sandblasting treated zirconia implant. Zirconia implants were manufactured from yttria-stabilized tetragonal zirconia polycrystalline (Acucera Inc., Pocheon, Korea). A total of 36 implants were installed in pigs' tibias. After 1, 4 and 12 weeks of healing period, the periotest and the histomorphometric analysis were performed. The data were analyzed using one-way ANOVA and significance was assessed by the Scheffe test (${\alpha}=.05$). Results: In the measurement of surface roughness, highest Ra value was measured in group T with significant difference. No significant differences were found among groups regarding Periotest values. After 1 week, in comparison of bone to implant contact (BIC), group Z showed higher value with significant difference. In comparison of bone area (BA), group T and group Z showed higher value with significant difference than group ZS. After 4 weeks, in comparison of BIC, group T showed higher value with significant difference. Comparison of BA showed no significant difference among each implant. After 12 weeks, the highest mean BIC values were found in group T with significant difference. Group ZS showed higher BIC value with significant difference than group Z. In comparison of BA, group T and group ZS showed higher value with significant difference than group Z. Conclusion: Zirconia implant showed low levels of osseointegration in this experiment. Modification of surface structure should be taken into consideration in designing zirconia implants to improve the success rate.

• The korean journal of orthodontics
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• v.40 no.5
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• pp.294-303
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• 2010

Objective: This study was designed to measure the surface roughness at the slot floor of various ceramic brackets. Methods: One kind of stainless steel bracket ($Succes^{(R)}$), two kinds of monocrystalline brackets (Inspire $Ice^{(R)}$, $Perfect^{(R)}$) and two kinds of polycrystalline brackets (Crystalline $V^{(R)}$, $Invu^{(R)}$) were examined. Atomic force microscopy (AFM) was used to measure the surface roughness of each bracket. Data acquisition and processing were performed using $SPIP^{TM}$. Results: The differences in values of Sa, Sq, and Sz in $Invu^{(R)}$ and Inspire $Ice^{(R)}$ were not statistically different from the control group $Succes^{(R)}$. The values of Sa, Sq, and Sz of $Perfect^{(R)}$ and Crystalline $V^{(R)}$ were greater than those of $Succes^{(R)}$. Differences of all the Sa, Sq, and Sz values between $Perfect^{(R)}$ and Crystalline $V^{(R)}$ were not statistically significant. Conclusions: It is concluded that the slot surfaces of $Succes^{(R)}$, Inspire $Ice^{(R)}$, and $Invu^{(R)}$ were smooth compared to those of Crystalline $V^{(R)}$ and $Perfect^{(R)}$.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.690-698
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• 1995

The Poly-S $i_{1-x}$G $e_{x}$ thin films were deposited on oxidized Si wafer by RTCVD(rapid thermal chemical vapor deposition) using Si $H_4$and Ge $H_4$, at 450 ~5$50^{\circ}C$. The variation of Ge mole fraction and the deposition rate of S $i_{1-x}$G $e_{x}$ thin film were studied as a function of the deposition temperature and the Ge $H_4$/Si $H_4$input ratio, and the crystal phase and the surface roughness were studied by XRD and AFM(atomic force microscopy), respectively. The experimental results showed that the activation energy for the deposition of poly-S $i_{1-x}$G $e_{x}$ was about 32~37Kca /mol and the deposition rate of S $i_{1-x}$G $e_{x}$ thin films was increased with increasing the deposition temperature and the input ratio. From the analysis of composition, it was known that the Ge mole fraction within the poly-S $i_{1-x}$G $e_{x}$ thin film was decreased with decreasing the input ratio and increasing the deposition temperature. As-deposited S $i_{1-x}$G $e_{x}$ thin films were polycrystalline over the entire experimental range. But those were amorphous at the deposition temperature of 450, 475$^{\circ}C$ and the input ratio of 0.05. By adding the Ge $H_4$, poly-S $i_{1-x}$G $e_{x}$ thin film were deposited at relatively lower deposition temperatures($\leq$ 5$50^{\circ}C$) than those of conventional poly-Si(>$600^{\circ}C$). From surface roughness measurement of poly-S $i_{1-x}$G $e_{x}$ it was found that the surface roughness( $R_{i}$ ) increased with increasing the deposition temperature and input ratio.and input ratio.

• Journal of Conservation Science
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• v.25 no.1
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• pp.101-114
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• 2009

Potsherds and kilns of the AD 3th century excavated from Gundong and Majeon sites, Korea were studied to investigate the production techniques and provenance of potsherds and kilns on the pastes. For potsherds, kilns blocks and in-situ paleo-soils, provenance of raw materials were estimated through mineralogy and geochemistry, while production technique and thermal feature of kilns were investigated through observation of textures and compositions as well as firing experiment on paleo-soils. As a result of study, potsherds and kilns were found to have similar mineralogical compositions as the neighboring paleo-soils and to have same evolution path with that of geochemistry. The potsherds were divided into 3 groups according to firing temperature and production technique. Group 1 consists of reddish stamped pattern pottery with loose textures, which has many pores and contains many iron oxides. Its temper is less than about 0.5mm, and was probably fired between 700 to $800^{\circ}C$. Group 2 contains ash to grayish blue stamped pattern pottery, which has vitrified texture and few pores. Its temper is less than about 0.5mm, and was probably fired from 900 to $1,000^{\circ}C$. However, some potsherd belongs to the group 2 in terms of features for temper and pastes, but it was probably fired over $1,100^{\circ}C$. Group 3 contains reddish and grayish stamped pattern pottery. It has vitrified matrix, few pores and temper consists of polycrystalline quartz and feldspar over 2mm, and it was probably fired around $1,000^{\circ}C$. The kiln had experienced temperature from 600 to $700^{\circ}C$ on the wall, from 900 to $1,000^{\circ}C$ on the bottom, suggesting the function of high temperature firing.