• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.37-38
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.110-110
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.91-92
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• 1993

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.2
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• pp.297-305
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• 2000

It is observed that the initial properties and degradation characteristics on plasma of n/p-MOSFET with polycide and poly-Si as different gate materials under F-N stress and hot electron stress are affected by metal AR(Antenna Ratio) during plasma process. Compared to that of MOS devices with poly-Si gate material, reliability properties on plasma of MOS devices with polycide gate material are improved. This can be explained by that fluorine of tungsten polycide process diffuses through poly-Si into gate oxide and results in additional oxide thickness. The fact that MOS devices with polycide gate material can reduce damages of plasma process shows possibility that polycide gate material can be used as gate material for next generation MOS devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.77.2-77
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• 1998

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.887-893
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• 1991

To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF$_2$ on the formation of Ti-silicide were investigated with RTA temperature and dopant concentration. The intermediate phase C49 TiSi$_2$ appeared at $650^{\circ}C$ and the stable phase C54 TiSi2 was formed at $700^{\circ}C$. And the formation of Ti-silicide was hindered by BF$_2$ doping and this trend was decreased with increasing temperature. The out-diffusion phenomena of BF$_2$ into Ti silicide were not observed. And significantly, the native oxide was a chief factor preventing the formation of Ti-silicides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.449-452
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• 1999

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process