• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.57-60
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• 1998

Poly(3-hexylthiophene)(P3HT) was synthesized by use of FeCl$_3$ as a oxidizing agent at $25^{\circ}C$. The infrared spectrum of our polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. P3HT contains the HT(head-to-tail) linkage larger than 64% based on NMR analysis. Electronic absorption and photoluminescence studies show that cast films of P3HT have three exciting state. Absorption spectrum was separated with three maximum peaks by Giese-French method and shifted to the shorter wavelength with increasing temperature. Separated absorption spectrum of P3HT is well adapted to PL peak appeared at longer wavelength. Low temperature PL spectrum is well separated at 669nm, 733nm and 812nm.

• 대한화학회지
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• 제68권3호
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• pp.146-150
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• 2024

Precise molecular configuration elucidation of poly(3-hexylthiophene) (P3HT) through advanced spectroscopic techniques is pivotal for enhancing P3HT-based photovoltaic device efficiencies since its high charge-carrier mobility is directly correlated to its well-ordered structure. In this study, we examine Raman depolarization ratios of annealed and non-annealed P3HT films to elucidate their intermolecular π-π configurations. Our findings suggest that the backbone of the annealed film possesses stronger π-π conjugation overlaps than that of the non-annealed film owing to the greater depolarization ratio of the annealed film. In addition, the depolarization ratios are also supported by theoretical calculations, where parallel-stacked thiophene structures display a higher depolarization ratio compared with that of twisted-stacked structures, as calculated by the Møller-Plesset perturbation theory. This study highlights the utility of polarized Raman spectroscopy as a versatile tool for assessing the degree of molecular order in highly conjugated polymer films.

• Composites Research
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• 제36권5호
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• pp.349-354
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• 2023

Poly(3-hexylthiophene) (P3HT)는 유기 용매에서 높은 용해도를 가지고 있으면서 상대적으로 쉽게 구할 수 있는 공액 고분자 중 하나이다. 그러나, 전자소자의 활성 소재로써 전기적 특성은 실제로 응용하기에는 부족하므로 추가 개선이 필요하다. 본 연구에서는, 서로 다른 위치 규칙성 (regio-regularity)을 가지는 두 P3HT 고분자 (즉, regioregular (RR) P3HT 및 regio-random (RRa) P3HT)를 혼합하여 혼합 박막의 전하 전달 특성을 크게 향상시킬 수 있음을 보여준다. 두 P3HT 고분자 간 비율을 변화시킴으로써 혼합 박막의 구조적 및 전기적 특성을 체계적으로 조사하였으며, 원자 힘 현미경(AFM), X선 회절(XRD) 및 UV-vis 흡수분광법을 사용하여 혼합 필름의 구조 및 광전자적 특성을 평가하였다. 혼합 박막의 결정성은 RRa-P3HT 함량이 20 wt%로 증가함에 따라 증가하였으며, 이후 80%까지 증가함에 따라 감소하였다. 전하 이동도의 경향성 또한 이와 같았으며, 20 wt%의 RRa-P3HT를 포함하는 혼합 박막의 전하 이동도는 가장 높은 0.029 cm²/V·s로 측정되었고 함량이 80 wt%까지증가함에따라 0.0007 cm²/V·s 로감소하였다.

• 폴리머
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• 제38권2호
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• pp.188-192
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• 2014

본 연구에서는 용해도가 낮은 용매에 dipping하는 방법을 이용하여 고분자 반도체 박막의 분자규칙도를 쉽게 향상시켰다. Poly(3-hexylthiophene)(P3HT)의 구조적, 광학적, 전기적 특성은 dipping 용매의 용해도와 dipping 시간에 따라 크게 영향을 받았다. 특히 methylene chloride 용매에 P3HT 박막을 dipping한 뒤 dipping 시간을 조절하여 고분자 박막의 분자규칙도를 효과적으로 증가시켰다. 분자규칙도와 전기적 특성의 관계를 고려하여 적절한 용매선택과 dipping 시간을 최적화할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.162-165
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• 2000

To investigate the effect of metal electrode in electroluminescent[EL] devices, we fabricated EL devices of ITO/P3HT/Al, ITO/P3HT/LiF/Al and ITO/P3HT/Mg:In structure. In current-voltage-light power characteristics, turn-on voltage of EL devices using LiF insulating layer and Mg:In(2.8V) metal electrode is lower than EL device using Al(4.2V). Besides the external quantum efficiency is improved also. The reason is related to carrier mobility and carrier injection, which would affect the hole-electron balance. In the device with Al electrode, holes injected from indium-tin-oxide[ITO] to poly(3-hexylthiophene)[P3HT] might reach the Al electrode without interacting with injected electrons, because the electron injection efficiency was very low for this electrode. Besides oxidation of the Al electrode is likely due to holes reaching the cathode without meeting injected electrons. Another possible reason for the higher EL efficiency may be the insulating layer playing the role of a tunneling barrier for holes to the Al electrode. In all EL devices, the orange-red light was clearly visible in a dark room. Maximum peak wavelength of EL spectrum emitted at 640nm in accordance with photon energy 1.9eV

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.294-302
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• 2007

We studied on possibility of the application of photolithography technique to patterning the organic active layer poly(3-hexylthiophene) (P3HT). In the case of selective etching method, we made thin oxide film on P3HT thin film using $O_2$ treatment. We achieved the field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}\;cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the selective etching method, ${\sim}7.4{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}5{\times}10^3$ in the lift-off one. These values are higher than ones of the unpatterned P3HT-based OTFTs. On the basis of the above results, we demonstrate the photolithographic patterning for P3HT active layer is successfully carried out without degradation of P3HT.

• Korean Chemical Engineering Research
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• 제49권1호
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• pp.95-100
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• 2011

본 연구에서는 유기 태양전지용 작은 밴드 갭 물질(p-형 반도체)의 개발 과정에서, 2,5-dioctyloxyphenylene(OP), 3-hexylthiophene(HT) 및 2,3-dimethylthieno[3,4-b]pyrazine(TP)을 반복단위로 갖는 올리고머(oligo(OP-HT-TP))를 합성하였다. Oligo(OP-HT-TP)는 측정 온도 범위에서 무정형 상태로 존재하였으며, 범용 유기용매에 잘 용해되었다. 필름상태에서 최대 흡수 파장은 716 nm이었으며, 밴드 갭은 대략 1.20 eV로 측정되었다. Oligo(OP-HT-TP)의 HOMO와 LUMO의 에너지 준위는 각각 -5.27 eV와 -4.04 eV로 측정되었다. 그러나, 이 올리고머의 최대 흡수 파장에서 흡광도는 유기태양전지의 제작에 있어서 현재까지 가장 많이 사용되고 있는 poly(3-hexylthiophene) 흡광도의 1/5보다도 더 작은 것으로 측정되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.168.2-168.2
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• 2015

We observed the temperature-dependent evolution and behavior of P3HT type-II phase during a real time annealing process from a cryo-cooled low temperature in the absence and presence of an Al electrode. A poly (3-hexylthiophene) (P3HT) Type-II phase in the P3HT:PCBM films started to form near at $-10^{\circ}C$, regardless of Al layer presence. In the absence of an Al layer, type-II phase was extinct at $30^{\circ}C$. However, the extinction temperature was extended to $50^{\circ}C$ in the presence of the Al layer. Simultaneously, combined with the type-II phase, a 1:3 ordered P3HT type-II (1/3,0,0) super-lattice peak evolved. These type-II domains tended to be formed near the Al electrode layer with higher aligned status than host P3HT crystals.

• Bulletin of the Korean Chemical Society
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• 제29권7호
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• pp.1349-1352
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• 2008

We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.

• 한국염색가공학회지
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• 제26권4호
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• pp.347-352
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• 2014

Film thickness dependent nanostructure evolution by a post annealing was investigated in poly (3-hexylthiophene):phenyl-C61-butyric acid methyl ester(P3HT:PCBM) films for organic solar cells which were fabricated by dichlorobenzene(DCB) solvent. In case of a 70nm thin film, the thermal annealing process affected to slight increment of the P3HT crystals in the surface region. On the other hand, large number of small sized P3HT crystals near the surface region was formed in the 200nm thick film. The solar cell devices showed the 3% power conversion efficiency(PCE) in 1:0.65 and 1:1 ratio(by weight) of P3HT and PCBM in 70nm and 200nm thickness conditions, respectively. Despite to the similar PCE, the short circuit current Jsc was different in 70nm and 200nm devices, which was related to the different nanostructure of P3HT:PCBM after thermal annealing.