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Electrical Characteristics Enhancement of Conjugated Polymer Thin Film Transistor by Using Dipping Method

Dipping 방법을 이용한 공액 고분자박막 트랜지스터의 전기적 특성 향상

  • Kim, Hye Su (Department of Energy and Chemical Engineering, Incheon National University) ;
  • Na, Jin Yeong (Department of Energy and Chemical Engineering, Incheon National University) ;
  • Park, Yeong Don (Department of Energy and Chemical Engineering, Incheon National University)
  • 김혜수 (인천대학교 에너지화학공학과) ;
  • 나진영 (인천대학교 에너지화학공학과) ;
  • 박영돈 (인천대학교 에너지화학공학과)
  • Received : 2013.10.04
  • Accepted : 2013.11.08
  • Published : 2014.03.25

Abstract

In this work, it is possible to simply improve the molecular ordering of a conjugated polymer thin film by dipping into poor solvent. The structural order, optical, and electrical properties of poly(3-hexylthiophene) (P3HT) films were profoundly influenced by dipping time and solubility of solvent. Especially the dipping time in methylene chloride was controlled to efficiently improve the molecular ordering of the P3HT. The correlation between the structural order and the electrical properties was used to optimize the dipping time in the appropriate solvent.

본 연구에서는 용해도가 낮은 용매에 dipping하는 방법을 이용하여 고분자 반도체 박막의 분자규칙도를 쉽게 향상시켰다. Poly(3-hexylthiophene)(P3HT)의 구조적, 광학적, 전기적 특성은 dipping 용매의 용해도와 dipping 시간에 따라 크게 영향을 받았다. 특히 methylene chloride 용매에 P3HT 박막을 dipping한 뒤 dipping 시간을 조절하여 고분자 박막의 분자규칙도를 효과적으로 증가시켰다. 분자규칙도와 전기적 특성의 관계를 고려하여 적절한 용매선택과 dipping 시간을 최적화할 수 있었다.

Keywords

Acknowledgement

Supported by : 한국연구재단

References

  1. H. N. Tsao and K. Mullen, Chem. Soc. Rev., 39, 2372 (2010). https://doi.org/10.1039/b918151m
  2. Y. D. Park, J. A. Lim, H. S. Lee, and K. Cho, Mater. Today, 10, 46 (2007).
  3. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. de Leeuw, Nature, 401, 685 (1999). https://doi.org/10.1038/44359
  4. Z. He, K. Xiao, W. Durant, D. K. Hensley, J. E. Anthony, K. Hong, S. M. Kilbey, J. Chen, and D. Li, Adv. Funct. Mater., 21, 3617 (2011). https://doi.org/10.1002/adfm.201002656
  5. H. Yang, T. J. Shin, L. Yang, K. Cho, C. Y. Ryu, and Z. Bao, Adv. Funct. Mater., 15, 671 (2005). https://doi.org/10.1002/adfm.200400297
  6. Y. D. Park, D. H. Kim, Y. Jang, J. H. Cho, M. Hwang, H. S. Lee, J. A. Lim, and K. Cho, Org. Electron., 7, 514 (2006). https://doi.org/10.1016/j.orgel.2006.07.007
  7. K. C. Dickey, J. E. Anthony, and Y. -L. Loo, Adv. Mater., 18, 1721 (2006). https://doi.org/10.1002/adma.200600188
  8. W. H. Lee, D. H. Kim, J. H. Cho, Y. Jang, J. A. Lim, D. Kwak, and K. Cho, Appl. Phys. Lett., 91, 092105 (2007). https://doi.org/10.1063/1.2768885
  9. T. Yamamoto, D. Komarudin, M. Arai, B.-L. Lee, H. Suganuma, N. Asakawa, Y. Inoue, K. Kubota, S. Sasaki, T. Fukuda, and H. Matsuda, J. Am. Chem. Soc., 120, 2047 (1998). https://doi.org/10.1021/ja973873a
  10. H.-H. Lu, C.-Y. Liu, C.-H. Chang, and S.-A. Chen, Adv. Mater., 19, 2574 (2007). https://doi.org/10.1002/adma.200602632
  11. S. Berson, R. D. Bettignies, S. Bailly, and S. Guillerez, Adv. Funct. Mater., 17, 1377 (2007). https://doi.org/10.1002/adfm.200600922
  12. M. C. Gurau, D. M. Delongchamp, B. M. Vogel, E. K. Lin, D. A. Fischer, S. Sambasivan, and L. J. Richter, Langmuir, 23, 834 (2007). https://doi.org/10.1021/la0618972
  13. Y. D. Park, J. H. Cho, D. H. Kim, Y. Jang, H. S. Lee, K. Ihm, T. H. Kang, and K. Cho, Electrochem. Solid-State Lett., 9, G317 (2006). https://doi.org/10.1149/1.2337862
  14. R. D. McCullough, S. Tristram-Nagle, S. P. William, R. D. Lowe, and M. Jayaraman, J. Am. Chem. Soc., 115, 4910 (1993). https://doi.org/10.1021/ja00064a070
  15. J. Liu, E. E. Sheina, T. Kowalewski, and R. D. McCullough, Angew. Chem., Int. Ed., 41, 329 (2002). https://doi.org/10.1002/1521-3773(20020118)41:2<329::AID-ANIE329>3.0.CO;2-M
  16. C. Di, K. Lu, L. Zhang, Y. Liu, Y. Guo, X. Sun, Y. Wen, G. Yu, and D. Zhu, Adv. Mater., 22, 1273 (2010). https://doi.org/10.1002/adma.200902813
  17. G. Horowitz, Adv. Mater., 10, 365 (1998). https://doi.org/10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U
  18. Y. D. Park, H. S. Lee, Y. J. Choi, D. H. Kwak, J. H. Cho, S. H. Lee, and K. W. Cho, Adv. Funct. Mater., 19, 1200 (2009). https://doi.org/10.1002/adfm.200801763
  19. H. N. Tsao, D. Cho, J. W. Andreasen, A. Rouhanipour, D. W. Breiby, W. Pisula, and K. Mullen, Adv. Mater., 21, 209 (2009). https://doi.org/10.1002/adma.200802032
  20. M. L. Chabinyc, M. F. Toney, R. S. Kline, I. McCulloch, and M. Heeney, J. Am. Chem. Soc., 129, 3226 (2007). https://doi.org/10.1021/ja0670714