• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Journal of Microbiology and Biotechnology
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• v.33 no.3
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• pp.387-397
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• 2023

Cytochrome P450 (CYP) is a heme-containing enzyme that catalyzes hydroxylation reactions with various substrate molecules. Steroid hydroxylases are particularly useful for effectively introducing hydroxyl groups into a wide range of steroids in the pharmaceutical industry. This study reports a newly identified CYP steroid hydroxylase (BaCYP106A6) from the bacterium Bacillus sp. and characterizes it using an in vitro enzyme assay and structural investigation. Bioconversion assays indicated that BaCYP106A1 catalyzes the hydroxylation of progesterone and androstenedione, whereas no or low conversion was observed with 11β-hydroxysteroids such as cortisol, corticosterone, dexamethasone, and prednisolone. In addition, the crystal structure of BaCYP106A6 was determined at a resolution of 2.8 Å to investigate the configuration of the substrate-binding site and understand substrate preference. This structural characterization and comparison with other bacterial steroid hydroxylase CYPs allowed us to identify a unique Arg295 residue that may serve as the key residue for substrate specificity and regioselectivity in BaCYP106A6. This observation provides valuable background for further protein engineering to design commercially useful CYP steroid hydroxylases with different substrate specificities.

• Journal of Microbiology and Biotechnology
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• v.27 no.8
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• pp.1472-1482
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• 2017

Bacterial cytochrome P450 (CYP) steroid hydroxylases are effectively useful in the pharmaceutical industry for introducing hydroxyl groups to a wide range of steroids. We found a putative CYP steroid hydroxylase (BaCYP106A2) from the bacterium Bacillus sp. PAMC 23377 isolated from Kara Sea of the Arctic Ocean, showing 94% sequence similarity with BmCYP106A2 (Bacillus megaterium ATCC 13368). In this study, soluble BaCYP106A2 was overexpressed to evaluate its substrate-binding activity. The substrate affinity ($K_d$ value) to 4-androstenedione was $387{\pm}37{\mu}M$. Moreover, the crystal structure of BaCYP106A2 was determined at $2.7{\AA}$ resolution. Structural analysis suggested that the ${\alpha}8-{\alpha}9$ loop region of BaCYP106A2 is intrinsically mobile and might be important for initial ligand binding. The hydroxyl activity of BaCYP106A2 was identified using in vitro enzyme assays. Its activity was confirmed with two kinds of steroid substrates, 4-androstenedione and nandrolone, using chromatography and mass spectrometry methods. The main products were mono-hydroxylated compounds with high conversion yields. This is the second study on the structure of CYP106A steroid hydroxylases, and should contribute new insight into the interactions of bacterial CYP106A with steroid substrates, providing baseline data for studying the CYP106A steroid hydroxylase from the structural and enzymatic perspectives.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.79-86
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• 2006

N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.

• Journal of Microbiology and Biotechnology
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• v.17 no.8
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• pp.1385-1389
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• 2007

5-Enolpyruvylshikimate-3-phosphate (EPSP) synthase catalyzes the formation of EPSP and inorganic phosphate from shikimate-3-phosphate (S3P) and phosphoenolpyruvate (PEP) in the biosynthesis of aromatic amino acids. To delineate the domain-specific function, we successfully isolated the discontinuous C-terminal domain (residues 1-21, linkers, 240-427) of EPSP synthase (427 residues) by site-directed mutagenesis. The engineered C-terminal domains containing no linker (CTD), or with gly-gly ($CTD^{GG}$) and gly-ser-ser-gly ($CTD^{GSSG}$) linkers were purified and characterized as having distinct native-like secondary and tertiary structures. However, isothermal titration calorimetry (ITC), $^{15}N-HSQC$,\;and\;^{31}P-NMR$ revealed that neither its substrate nor inhibitor binds the isolated domain. The isolated domain maintained structural integrity, but did not function as the half of the full-length protein.

• Bulletin of the Korean Chemical Society
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• v.20 no.10
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• pp.1172-1176
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• 1999

Nucleophilic substitution reaction of Y-benzyl bromide with X-pyridines are investigated in DMSO at 45.0℃. Biphasic rate dependence is observed on varying the substituents in the substrate (Y) as well as in the nucleophile (X). The two well-defined straight lines in the Hammett (ρy) and Bronsted ( βx) plots are interpreted to indicate the changes in transition-state structure, a decrease in bond cleavage as the substituent on the substrate is changed from electron-donors ( ρy < 0) to electron-acceptors ( ρy > 0), and an increase in the extent of bond formation with the corresponding changes of the substituent on the pyridine. A Jencks' type analysis of separate polar (ρ) and resonance (ρr) effects can also be accounted for by the change of the transition-state structure, not by the variable combination of polar and resonance effects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.1-4
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• 2012

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.12-18
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• 2024

A Electrostatic chuck is a device that fixes the substrate, using the force between charges applied between two parallel plates to attract substrates such as wafers or OLED panels. Unlike mechanical suction methods, which rely on physical fixation, this method utilizes the force of electrostatics for fixation, making it important to verify the adhesion force. As the size of the substrate increases, deformations due to gravity or chucking force also increase, and the adhesion force decreases rapidly as the distance between the chuck and the substrate increases. The outlook for displays is shifting from small to large OLEDs, necessitating consideration of substrate deformations. In this paper, to confirm the deformation of the substrate through various patterns, a simplified 2D model using Ansys' electromagnetic field analysis program, Maxwell, and the static structural analysis program, Mechanical, was utilized to observe changes in adhesion force according to the variation in the air gap between the substrate and the chuck. Additionally, the chucking force was analyzed for the size of the substrate, and the deformation of the substrate was confirmed when gravity and chucking force act simultaneously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.30-34
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• 2016

In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.45-49
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• 2014

In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at $90^{\circ}C$. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.