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http://dx.doi.org/10.6111/JKCGCT.2012.22.1.001

Growth of O- and Zn-polar ZnO films by DC magnetron sputtering  

Yoo, Jin-Yeop (Department of Nano-semiconductor Engineering, National Korea Maritime University)
Choi, Sung-Kuk (Department of Nano-semiconductor Engineering, National Korea Maritime University)
Jung, Soo-Hoon (Department of Nano-semiconductor Engineering, National Korea Maritime University)
Cho, Young-Ji (Department of Nano-semiconductor Engineering, National Korea Maritime University)
Lee, Sang-Tae (Department of Offshore Plant Management, National Korea Maritime University)
Kil, Gyung-Suk (Division of Electrical and Electronics Engineering, National Korea Maritime University)
Lee, Hyun-Jae (PAN-Xal Co., Ltd.)
Yao, Takafumi (Center for Interdisciplinary Research, Tohoku University)
Chang, Ji-Ho (Department of Nano-semiconductor Engineering, National Korea Maritime University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.22, no.1, 2012 , pp. 1-4 More about this Journal
Abstract
O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.
Keywords
ZnO; DC magnetron sputtering; Polarity;
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