Browse > Article

Effects on Optical Characteristics of GaN Polarity Controlled by Substrate  

Kang, Sang-Won (Samsung Electro-Mechanics Co. LTD.)
Shim, Hyun-Wook (Samsung Electro-Mechanics Co. LTD.)
Lee, Dong-Yul (Samsung Electro-Mechanics Co. LTD.)
Han, Sang-Heon (Samsung Electro-Mechanics Co. LTD.)
Kim, Dong-Joon (Samsung Electro-Mechanics Co. LTD.)
Kim, Je-Won (Samsung Electro-Mechanics Co. LTD.)
Oh, Bang-Won (Samsung Electro-Mechanics Co. LTD.)
Kryliouk, Olga (Department of Chemical Engineering, University of Florida)
Anderson, Timothy J. (Department of Chemical Engineering, University of Florida)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.2, 2006 , pp. 79-86 More about this Journal
Abstract
N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.
Keywords
GaN; polarity; non-polar; MOCVD; MBE;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. Bai, T. Wang, H. Li, N. Jiang, S. Sakai, '(0 0 0 1) oriented GaN epilayer grown on r-sapphire by MOCVD,' J. Crystal Growth, Vol. 231, Issues 12, pp41-47, September 2001   DOI
2 E.S. Hellman, 'The Polarity of GaN: a Critical Review,' MRS Internet J. Nitride Semicond. Res., Vol. 3, Article 11, July 1998
3 A. Chakraborty, H. Xing, M.Craven, S.Keller, T.Mates, J.Speck, S.DenBaars, U.Mishra, 'Nonpolar a-plane p-type GaN and p-n Junction Diodes,' J. Appl. Phys., Vol. 96, Issue 8, pp.4494-4499, October 2004   DOI   ScienceOn
4 F.Wu, M. Craven, S. Lim, J. Speck, 'Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy,' J. Appl. Phys., Vol. 94, Issue 2, pp.942-947, July 2003   DOI   ScienceOn
5 Y. Han, M.W. Fay, P.D. Brown, S.V. Novikov, K.W. Edmonds, B.L. Gallagher, R.P. Campion, C.R. Staddon and C.T. Foxon, 'Structural characterisation of zinc-blende Gal-xMnxN epilayers grown by MBE as a function of Ga flux,' Journal of Crystal Growth, Vol. 284, Issues 3-4, pp.324-334, November 2005   DOI   ScienceOn
6 J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz and A. Hangleiter, 'Carrier confinement in GaInN/A1GaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field,' Materials Science and Engineering B, Vol. 59, Issues 1-3, pp.315-318, May 1999   DOI   ScienceOn
7 C.T. Foxon, S.V. Novikov, L.X. Zhao, K.W. Edmonds, A.D. Giddings, K.Y. Wang, R.P. Campion, .C.R. Staddon, M.W. Fay, Y. Han, 'Molecular beam epitaxy of p-type cubic GaMnN layers,' Journal of Crystal Growth, Vol. 278, Issues 1-4, pp.685-689, May 2005   DOI   ScienceOn
8 C G. Van de Walle, J. Neugebauer, 'Arsenic impurities in GaN,' Appl. Phys. Lett., Volume 76, Issue 8, pp.1009-1011, February 2000   DOI   ScienceOn
9 S. Tripathy, R. K. Soni, H. Asahi, K. Iwata, R. Kuroiwa, K. Asami and S. Gonda, 'Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam Epitaxy,' J. Appl. Phys, Vol. 85, Issue 12, pp.8386-8399, June 1999   DOI
10 A. E. Belyaev, C. T. Foxon, S. V. Novikov, O. Makarovsky, L. Eaves, M. J. Kappers and C. J. Humphreys, 'Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy', Appl. Phys. Lett., Vol. 83, Issue 17, pp.3626-3627, October 2003   DOI   ScienceOn
11 G. Martinez-Criado, A. Cros, A. Cantarero, C. R. Miskys, O. Ambacher, R. Dimitrov and M. Stutzmann, 'Photoluminescence of Ga-face A1GaN/GaN single heterostructures,' Materials Science and Engineering B, Vol. 82, Issues 1-3, pp.200-202, May 2001   DOI   ScienceOn
12 N. Grandjean, J. Massies and M. Leroux, 'Self-limitation of A1GaN/GaN quantum well energy by built-in polarization field,' Appl. Phys. Lett., Vol. 74, Issue 16, pp.236l-2363, April 1999   DOI   ScienceOn