• Title/Summary/Keyword: point defect

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Phenomenological monte carlo simulation model for predicting B, $BF_2$, As, P and Si implant profiles in silicon-based semiconductor device

  • Kwon, Oh-Kuen;Son, Myung-Sik;Hwang, Ho-Jung
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.1-9
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    • 1999
  • This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

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Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution (황산 용액에서 Al 산화피막의 생성과정 연구)

  • Chon, Jung-Kyoon;Kim, Youn-Kyoo
    • Journal of the Korean Chemical Society
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    • v.54 no.4
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    • pp.380-386
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    • 2010
  • We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

Simulated Annealing for Reduction of Defect Sensitive Area Through Via Moving (Via 이동을 통한 결함 민감 지역 감소를 위한 시뮬레이티드 어닐링)

  • Lee, Seung Hwan;Sohn, So Young
    • Journal of Korean Institute of Industrial Engineers
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    • v.28 no.1
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    • pp.57-62
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    • 2002
  • The semiconductor industry has continuously been looking for the ways to improve yield and to reduce manufacturing cost. The layout modification approach, one of yield enhancement techniques, is applicable to all design styles, but it does not require any additional resources in terms of silicon area. The layout modification method for yield enhancement consists of making local variations in the layout of some layers in such a way that the critical area, and consequently the sensitivity of the layer to point defects, is reduced. Chen and Koren (1995) proposed a greedy algorithm that removes defect sensitive area using via moving, but it is easy to fall into a local minimum. In this paper, we present a via moving algorithm using simulated annealing and enhance yield by diminishing defect sensitive area. As a result, we could decrease the defect sensitive area effectively compared to the greedy algorithm presented by Chen and Koren. We expect that the proposed algorithm can make significant contributions on company profit through yield enhancement.

Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot (단결정 실리콘 잉곳 결정성장 속도에 따른 고-액 경계면 형성 및 Defect 최적화)

  • Jeon, Hye Jun;Park, Ju Hong;Artemyev, Vladimir;Jung, Jae Hak
    • Current Photovoltaic Research
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    • v.8 no.1
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    • pp.17-26
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    • 2020
  • It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

A study on Defect Diagnosis of Gas Turbine Engine Using Hybrid SVM-ANN in Off-Design Region

  • Seo, Dong-Hyuck;Choi, Won-Jun;Roh, Tae-Seong;Choi, Dong-Whan
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2008.03a
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    • pp.72-79
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    • 2008
  • The weak point of the artificial neural network(ANN) is that it is easy to fall in local minima when it learns too much nonlinear data. Accordingly, the classification ratio must be low. To overcome this weakness, the hybrid method has been proposed. That is, the ANN learns data selectively after detecting the defect position by the support vector machine(SVM). First, the SVM has been used for determination of the defect position and then the magnitude of the defect has been measured by the ANN. In off-design condition, the operation region of the engine is wide and the nonlinearity of learning data increases. The module system, dividing the whole operating region into reasonably small-size sections, has been suggested to solve this problem. In this study, the proposed algorithm has diagnosed the defects of triple components as well as single and dual components of the gas turbine engine in off-design condition.

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Multiple Defect Diagnostics of Gas Turbine Engine using Real Coded GA and Artificial Neural Network (실수코드 유전알고리즘과 인공신경망을 이용한 가스터빈 엔진의 복합 결함 진단 연구)

  • Seo, Dong-Hyuck;Jang, Jun-Young;Roh, Tae-Seong;Choi, Dong-Whan
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2008.11a
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    • pp.23-27
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    • 2008
  • In this study, Real Coded Genetic Algorithm(RCGA) and Artificial Neural Network(ANN) are used for developing the defect diagnostics of the aircraft turbo-shaft engine. ANN accompanied with large amount data has a most serious problem to fall in the local minima. Because of this weak point, it becomes very difficult to obtain good convergence ratio and high accuracy. To solve this problem, GA based ANN has been suggested. GA is able to search the global minima better than ANN. GA based ANN has shown the RMS defect error of 5% less in single and dual defect cases.

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Gluteus Maximus Muscle Flap in Tongue in Groove and Wrap Around Pattern for Refractory CSF Leakage in Extradural Cyst Patient

  • Park, Kyong Chan;Lee, Jun Ho;Shim, Jae Jun;Lee, Hyun Ju;Choi, Hwan Jun
    • Archives of Plastic Surgery
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    • v.49 no.3
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    • pp.365-368
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    • 2022
  • Spinal extradural arachnoid cyst (SEAC) is a rare disease and has surgical challenges because of the critical surrounding anatomy. We describe the rare case of a 58-year-old woman who underwent extradural cyst total excision with dural repair and presented with refractory cerebrospinal fluid (CSF) leakage even though two consecutive surgeries including dural defect re-repair and lumbar-peritoneal shunt were performed. The authors covered the sacral defect using bilateral gluteus maximus muscle flap in tongue in groove and wrap around pattern for protection of visible sacral nerve roots and blockage of CSF leakage point. With the flap coverage, the disappearance of cyst and fluid collection was confirmed in the postoperative radiological finding, and the clinical symptoms were significantly improved. By protecting the sacral nerve roots and covering the base of sacral defect, we can minimize the risk of complication and resolve the refractory fluid collection. Our results suggest that the gluteus muscle flap can be a safe and effective option for sacral defect and CSF leakage in extradural cyst or other conditions.