• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• 한국구조물진단유지관리공학회 논문집
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• 제23권2호
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• pp.130-134
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• 2019

본 논문에서는 레이저기반 응력측정을 위한 비접촉식 로드셀을 개발을 위하여, 실내실험을 통하여 기술을 검증하고, 실규모 실험을 통하여 문제점을 파악하였으며, 최종적으로 현장적용에 적합한 응력측정용 비접촉식 로드셀 프로토타입을 개발하였다. 이를 위하여, 중심공 압축타입의 로드셀 제작에 사용되는 로드셀 몸체 표면에 용사코팅기술을 이용하여 알루미나를 도포하고, 레이저를 기반으로한 압분광법을 이용하여, 비접촉식으로 응력을 계측하였다. 이때, 인가되는 응력과 스펙트럼 이동간의 관계가 선형임을 확인하였다. 해당 기술의 현장 적용성 확인을 위하여, 실규모 프리스트레스 콘크리트 시편을 제작하고, 레이저를 조사하여 인가된 응력을 확인하는 과정에서, 반복적인 상황 하에서 레이저 조사 위치가 동일해야 함을 확인하였다. 이를 보완하기 위하여 프로브를 고정할 수 있는 케이싱이 포함된 로드셀 프로토타입을 제작하였고, 실내일축압축시험을 통하여 압축력과 스펙트럼 이동간의 선형성을 확인하였다. 따라서, 본 연구를 통하여 개발된 비접촉식 로드셀을 이용하여, 압축력을 효과적으로 측정할 수 있을 것으로 기대된다.

• Corrosion Science and Technology
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• 제18권2호
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• pp.55-60
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• 2019

Corrosion failure in the convection part of peak load boiler (PLB) of the district heating system led to water leakage. Herein, Internal Rotary Inspection System (IRIS) inspection was employed to examine wall thinning and the cause of leakage in the flue tube. The corrosive products of the turbulator and tube were investigated using scanning electron microscope combined with energy dispersive spectroscopy, X-ray diffraction, and inductively coupled plasma (ICP). Majority of the serious corrosion damage was observed near the turbulator located in the upper flue tube. ICP analysis of the boiler water revealed oxide formation of sodium chloride in the lower end part of the flue tube. A cross-sectional view of the turbulator revealed the presence of double-layers of the oxide film, indicating environmental change during operation associated with water leakage. The outer surface of the turbulator consisted of the acid oxides such as $NO_x$ and $SO_x$ along with sodium and chloride ions. Dew-point corrosion is hypothesized as the main cause for the formation of acid oxides in the region of contact of the flue tube and the turbulator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.

• 한국재료학회지
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• 제14권6호
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• pp.389-393
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• 2004

The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 50 nm-thick and, the same time, the silicides also need to have low contact resistance without agglomeration at high processing temperatures. We fabricated Si(100)/15 nm-Ni/15 nm-Co samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from $700^{\circ}C$ to $1100^{\circ}C$ using rapid thermal annealing. We investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. Sheet resistance of the annealed sample stack was measured with a four point probe. The sheet resistance measurements for our proposed Co/Ni composite silicide was below 8 $\Omega$/sq. even after annealing $1100^{\circ}C$, while conventional nickel-monosilicide showed abrupt phase transformation at $700^{\circ}C$. Microstructure and auger depth profiling showed that the silicides in our sample consisted of intermixed phases of $CoNiSi_{x}$ and NiSi. It was noticed that NiSi grew rapidly at the silicon interface with increasing annealing temperature without transforming into $NiSi_2$. Our results imply that Co/Ni composite silicide should have excellent high temperature stability even in post-silicidation processes.

• The Journal of Advanced Prosthodontics
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• 제16권3호
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• pp.189-199
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• 2024

PURPOSE. This study was conducted to evaluate the effects of plasma treatment of sandblasted and acid-etched (SLA) titanium implants on surface cleansing and osseointegration in a beagle model. MATERIALS AND METHODS. For morphological analysis and XPS analysis, scanning electron microscope and x-ray photoelectron spectroscopy were used to analyze the surface topography and chemical compositions of implant before and after plasma treatment. For this animal experiment, twelve SLA titanium implants were divided into two groups: a control group (untreated implants) and a plasma group (implants treated with plasma). Each group was randomly located in the mandibular bone of the beagle dog (n = 6). After 8 weeks, the beagle dogs were sacrificed, and volumetric analysis and histometric analysis were performed within the region of interest. RESULTS. In morphological analysis, plasma treatment did not alter the implant surface topography or cause any physical damage. In XPS analysis, the atomic percentage of carbon at the inspection point before the plasma treatment was 34.09%. After the plasma treatment, it was reduced to 18.74%, indicating a 45% reduction in carbon. In volumetric analysis and histometric analysis, the plasma group exhibited relatively higher mean values for new bone volume (NBV), bone to implant contact (BIC), and inter-thread bone density (ITBD) compared to the control group. However, there was no significant difference between the two groups (P > .05). CONCLUSION. Within the limits of this study, plasma treatment effectively eliminated hydrocarbons without changing the implant surface.

• 한국결정성장학회지
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• 제34권2호
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• pp.41-47
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• 2024

본 연구에서는 SiC(Silicon Carbide) 분말의 순도와 결정 성장 후 냉각 속도를 제어하여 PVT(Physical Vapor Transport) 방법으로 성장한 4인치 HPSI(High-Purity Semi-Insulating)-SiC 단결정의 저항 특성을 조사하였다. 순도가 다른 2개의 β-SiC 분말을 사용하였고, 성장 후 냉각 속도를 조절하여 다양한 저항값을 얻었다. 성장된 결정의 투과/흡수 스펙트럼 및 결정 품질은 각각 UV/VIs/NIR 분석과 XRD Rocking curve 분석을 이용하였으며, 비접촉 비저항 분석을 통해 전기적 특성을 조사하여 비저항 특성에 우세한 영향을 미치는 주요 요인을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.400-401
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• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• 마이크로전자및패키징학회지
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• 제22권3호
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• pp.25-30
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• 2015

직경 20 nm 미만의 금속 나노입자들이 나타내는 저온 용융특성을 이용한 새로운 패드 피니쉬 공정을 적용하여 Cu 표면을 SAC305로 코팅한 후 wettability의 변화를 평가하였다. SAC305 잉크를 사용한 $160^{\circ}C$의 저온 코팅공정 시 형성되는 SAC305 코팅층의 두께는 수 나노미터 수준으로 극히 얇았으며, 이 코팅층 밑으로 10~100 nm 두께 수준의 $Cu_6Sn_5$ 및 50~150 nm 두께 수준의 $Cu_3Sn$ 금속간화합물층 반응층이 생성되었음을 확인할 수 있었다. 즉, 생성된 금속간 화합물층의 두께는 압연동 시편에 비해 전해도금동 시편에서 훨씬 두꺼웠는데, 이는 전해도금동 시편에서 관찰되는 향상된 표면 거칠기 특성에 의해 단위면적 기준으로 보다 많은 수의 SAC305 나노입자들이 접촉된 상태에서 용융되어 반응하기 때문으로 분석되었다. 이후 SAC305 솔더볼을 사용한 젖음각 측정 실험에서 저온 SAC 코팅이 이루어진 Cu 표면은 SAC 코팅이 없는 Cu 표면에 비해 눈에 띄게 낮은 젖음각을 나타내어 당 코팅법으로 Cu 표면에 단지 수 나노미터 두께의 SAC305 층을 형성시킨 경우에서도 솔더의 wettability 개선을 유도할 수 있음을 확인할 수 있었다.