• 제목/요약/키워드: plasma-focus device

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동축 플라즈마 집속장치에서의 x-선 방출에 관한 연구 (The study on X-ray generation in the Coaxial Plasma focus Device)

  • 엄영현
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.65-69
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    • 1989
  • Mather type dense plasma focus device was develooped for the feasibili쇼 study in its application to the x-ray lithography. To etermine the electrical characteristics,the temporal begavior of the discharge current and the voltage was measured by using the Rogowski coil and the high voltage probe respectively. The results are 9 $\mu\textrm{s}$ of the period, 18m$\Omega$ of resistance and 0.16$\mu$Η of inductance. The average current sheath velocity was measured by the light signal emitted at the moving plasma sheath. The light signal was detected through two fiber bundles. When the applied voltage was 13 kV and the initial jpressure of argon was 21.8 Pa, the best plasma focus was occurred. The x-ray emission characteristics from the plasma focus was determined by the x-ray pictures taken by pinhole camera. It is focus that the plasma was focused at 1.4 cm distant position above the center electrode and its diameter was about 1.0 m.

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Extreme Ultraviolet Plasma and its Emission Characteristics Generated from the Plasma Focus in Accordance with Gas Pressure for Biological Applications

  • Kim, Jin Han;Lee, Jin Young;Kim, Sung Hee;Choi, Eun Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.178.2-178.2
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    • 2013
  • Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

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A feasibility study of the Iranian Sun mather type plasma focus source for neutron capture therapy using MCNP X2.6, Geant4 and FLUKA codes

  • Nanbedeh, M.;Sadat-Kiai, S.M.;Aghamohamadi, A.;Hassanzadeh, M.
    • Nuclear Engineering and Technology
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    • 제52권5호
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    • pp.1002-1007
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    • 2020
  • The purpose of the current study was to evaluate a spectrum formulation set employed to modify the neutron spectrum of D-D fusion neutrons in a IS plasma focus device using GEANT4, MCNPX2.6, and FLUKA codes. The set consists of a moderator, reflector, collimator and filters of fast neutron and gamma radiation, which placed on the path of 2.45 MeV neutron energy. The treated neutrons eliminate cancerous tissue with minimal damage to other healthy tissue in a method called neutron therapy. The system optimized for a total neutron yield of 109 (n/s). The numerical results indicate that the GEANT4 code for the cubic geometry in the Beam Shaping Assembly 3 (BSA3) is the best choice for the energy of epithermal neutrons.

플라즈마 포커스를 이용한 크롬 산화물 박막 성장의 분위기 기체 압력 의존성 연구 (Dependence of Gas Pressure on Cr Oxide Thin Film Growth Using a Plasma Focus Device)

  • 정규호;이재갑;임현식;;;이전국
    • 한국재료학회지
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    • 제17권6호
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    • pp.308-312
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    • 2007
  • Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

Measurement of EUV (Extreme Ultraviolet) and electron temperature in a hypocycloidal pinch device for EUV lithography

  • Lee, Sung-Hee;Hong, Young-June;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.108-108
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    • 2010
  • We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

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Damage studies on irradiated tungsten by helium ions in a plasma focus device

  • Seyyedhabashy, Mir mohammadreza;Tafreshi, Mohammad Amirhamzeh;bidabadi, Babak Shirani;Shafiei, Sepideh;Nasiri, Ali
    • Nuclear Engineering and Technology
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    • 제52권4호
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    • pp.827-834
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    • 2020
  • Damage of tungsten due to helium ions of a PF device was studied. The tungsten was analyzed by SEM and AFM after irradiation. SEM revealed fine bubbles of helium atoms with diameters of a few nanometers, which join and form larger bubbles and blisters on the surface of tungsten. This observation confirmed the results of molecular dynamics simulation. SEM analysis after etching of the irradiated surface indicated cavities with depth range of 35-85 nm. The average fluence of helium ion of the PF device was calculated about 5.2 × 1015 cm-2 per shot, using Lee code. Energy spectrum of helium ions was estimated using a Thomson parabola spectrometer as a function of dN/dE ∝ E-2.8 in the energy range of 10-200 keV. The characteristics of helium ion beam was imported to SRIM code. SRIM revealed that the maximum DPA and maximum helium concentration occur in the depth range of 20-50 nm. SRIM also showed that at depth of 30 nm, all of the tungsten atoms are displaced after 20 shots, while at depth of higher than 85 nm the destruction is insignificant. There is a close match between SRIM results and the measured depths of cavities in SEM images of tungsten after etching.

Influence of Ne-Xe Gas Mixture Ratio on the Extreme Ultraviolet (EUV) Emission Measurement from the Coaxially Focused Plasma

  • Lee, Sung-Hee;Hong, Young-June;Choi, Duk-In;Uhm, Han-Sup;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.220-220
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    • 2011
  • The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

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차세대 리소그래피 빛샘 발생을 위한 플라스마 집속 장치의 제작과 아르곤 아크 플라스마의 발생에 따른 회로 분석 및 전기 광학적 특성 연구 (Fabrication of the Plasma Focus Device for Advanced Lithography Light Source and Its Electro Optical Characteristics in Argon Arc Plasma)

  • 이수범;문민욱;오필용;송기백;임정은;홍영준;이원주;최은하
    • 한국진공학회지
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    • 제15권4호
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    • pp.380-386
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    • 2006
  • 본 연구에서는 극자외선 (Extreme Ultra Violet) 리소그래피의 빛샘원 발생을 위한 플라스 마 집속장치 (Plasma Focus Device)를 설계, 제작하였으며, 이를 이용하여 단펄스 집속 플라스마의 전류, 전압 방전 특성 및 장비의 저항, 인덕턴스의 중요 기초 연구를 수행하였다. 전압, 전류는 C-dot probe 와 B-dot probe를 이용하여 측정하였다. Anode 전극에 1.5, 2, 2.5, 3 kV의 전압을 인가하고 Diode chamber 내의 Ar 기체압력을 1 mTorr-100 Torr 로 변화시켰을 때 발생되는 전압, 전류는 300 mTorr 에서 가장 큰 값을 보였으며, 이때 측정된 LC 공진에 의한 전류 파형으로부터 계산된 시스템 내의 인덕턴스와 임피던스값은 각각 73 nH, $35 m{\Omega}$ 였다. 300 mTorr, 2.5 kV 일 때 Emission spectroscopy를 이용하여 계산한 단펄스 집속 Ar 플라스마내의 전자온도는 Local Thermodynamic Equilibrium(LTE) 가정으로부터 T=13600 K 이었고 이온밀도 및 이온화율은 각각 $N_i = 8.25{\times}10^{15}/ cc,\;{\delta}= 77.8%$ 이었다.

펄스형 방전플라스마에서 발생하는 가시광선의 분광특성 연구 (Spectroscopy of Visible Light Emitted from Plasma Occurred by Pulse Discharge)

  • 최운상
    • 한국안광학회지
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    • 제3권1호
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    • pp.27-31
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    • 1998
  • 펄스형 방전플라즈마 발생장치인 플라스마 포커스장치에서 발생하는 가시광선영역의 빛을 시간분해분석법과 시간적분분석법으로 분광분석하였다. 플라스마포커스장치는 전극이 동축형으로 사용되었고, 시간 용해분석법은 고정된 파장의 광펄스를 오실로스코프로 분석하였으며, 시간 적분법을 일정한 범위의 파장대를 필림에 현상하여 densitometer로 분석하였다. 가시광선발생은 방전전압과 기체압력을 변수로 측정하여 방전전압은 17 kV이고 기체압력은 아르곤기체일 경우 0.5 torr가 최적조건이었다.

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펄스형 방전플라스마에서 발생하는 가시광선의 분광(II) (Spectroscopy of visible light emitted from plasma occurred by pulse discharge(II))

  • 최운상;정수자;김용훈;장준규;정정복;신장철
    • 한국안광학회지
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    • 제5권2호
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    • pp.163-165
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    • 2000
  • 펄스형 방전플라즈마 발생장치인 플라스마 포커스장치에서 발생하는 가시광선영역의 빛을 시간적분 분석법으로 분광 분석하였다. 플라스마 포커스장치는 펄스방전에 의해 전기에너지를 빛에너지로 발생시킬 수 있는 장치이다. 분광분석기는 초점거리가 0.5 m인 모노크로메터를 사용하였다. 시간적분 분석법은 분광된 일정한 범위의 가시광선영역의 파장대를 필름에 현상하여 densitometer로 분석하는 방법이다. 가시광선 발생은 방전전압과 기체압력의 최적조건에서 발생되었는데 방전전압은 13kV이고 아르곤과 헬륨기체가 가시광선영역의 빛을 발생시키는데 사용되었다.

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