• Journal of Welding and Joining
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• v.8 no.4
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• pp.58-68
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• 1990

The formation of thermal stresses by plasma spraying is generally considered as adverse. Therefore, the knowledge of stress distribution in the deposited layer during and after plasma spraying will be of special interest. In this study finite difference heat transfer analysis and finite element stress analysis were carried out to predict the change of stress distribution in the plasma coated layer with the variations of preheat temperature, number of scan, particle size, and bond coat. The results of the numerical analysis were as follows: 1) Transient stresses developed in the coated layer were up to the level of yiedl strength at the temperature. 2) The tensile stresses were developed in the deposited layer and the surface of the substrate, but the compressive stresses were developed in the rest of the substrate. 3) Transient and residual stresses were significantly affected by the preheat temperature. 4) The variations of temperature of powder particle and number of torch scan changed tensile stress distribution, but made no difference on the magnitude of the stresses. 5) Bond coated layer reduced the stree level of deposited layer.

• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.108-108
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• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.125-130
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• 2008

Conventional plasma carburizing or nitriding for austenitic stainless steels results in a degradation of corrosion resistance. However, a low temperature plasma surface treatment can improve surface hardness without deteriorating the corrosion resistance. The 2-step low temperature plasma processes (the combined carburizing and post nitriding) offers the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. In the present paper, attempts have been made to investigate the influence of the introduction of Ar gas (0~20%) in nitriding atmosphere during low temperature plasma nitriding at $370^{\circ}C$ after low temperature plasma carburizing at $470^{\circ}C$. All treated specimens exhibited the increase of the surface hardness with increasing Ar level in the atmosphere and the surface hardness value reached up to 1050 HV0.1, greater than 750 $HV_{0.1}$ in the carburized state. The expanded austenite phase (${\gamma}_N$) was observed on the most of the treated surfaces. The thickness of the ${\gamma}_N$ layer reached about $7{\mu}m$ for the specimen treated in the nitriding atmosphere containing 20% Ar. In case of 10% Ar containing atmosphere, the corrosion resistance was significantly enhanced than untreated austenitic stainless steels, whilst 20% Ar level in the atmosphere caused to form CrN in the N-enriched layer (${\gamma}_N$), which led to the degradation of corrosion resistance compared with untreated austenitic stainless steels.

• Korean Journal of Metals and Materials
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• v.47 no.10
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• pp.629-634
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• 2009

The effects of processing parameters on the surface properties of the hardened layers processed by the low temperature plasma nitrocarburizing and the low temperature two-step plama treatment (carburizing+nitriding) were investigated. The nitrogen-enriched expanded austenite structure (${\gamma}_N$) or S phase was formed on all of the treated surface. The surface hardness reached up to 1200 $HV_{0.025}$, which is about 5 times higher than that of untreated sample (250 $HV_{0.1}$). The thickness of hardened layer of the low temperature plasma nitrocarburized layer treated at $400^{\circ}C$ for 40 hour was only $15{\mu}m$, while the layer thicknesss in the two-step plama treatment for the 30 hour treatment increased up to about $30{\mu}m$. The surface thickness and hardness increased with increasing treatment temperature and time. In addition, the corrosion resistance was enhanced than untreated samples due to a high concentration of N on the surface. However, higher treatment temperature and longer treatment time resulted in the formation of $Cr_2N$ precipitates, which causes the degradation of corrosion resistance.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.300-303
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• 1987

A microwave plasma generating system has been designed to study the properties of plasma. A microwave(2.45GHz) generated by the magnetron is transmitted to the cylindrical cavity through the the rectangular wave guide to generate hydrogen plasma. The electron temperature and the plasma density are measured by the Double Langmuir probe. A dilectric such as alumina is heated by the microwave add plasma. The surface temperature varies with the neutral gas pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.634-639
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• 1996

In oder to improve the wear resistance as well as oxidation resistance at high temperature a AISI H13 steel was treated by a duplex process of calorizing followed by plasma nitriding. The surface properties of the duplex-treated AISI H13 steel was characterized and compared with those treated by single surface process of calorizing and plasma nitriding, in terms of microstruture, microhardness, wear resistance at $500^{\circ}C$, and the oxidation behaviours at $700^{\circ}C$, Duplex process on H13 steel had created duplex layer of approximately $190\mu\textrm{m}$ on the surface, and surface microhardness was measured to be above 1450Hv(0.1Kgf). There was considerable improvement of the high temperature wear resistance at $500^{\circ}C$ in the duplex-treated steel when both wear volume and weight change due to oxidation were considered. In addition the duplex-treated steel showed an improved high temperature oxidation resistance than the plasma nitrided steel at $700^{\circ}C$.