• 전력전자학회논문지
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• 제12권5호
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• pp.386-393
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• 2007

본 논문에서는 CIM(Current Injection Method)을 이용한 charge-pump방식의 plasma backlight용 고압 inverter회로를 제안한다. 고압 inverter에서 에너지 회수회로의 채용은 새로운 시도로서 에너지회수 이외에도 noise에 의한 시스템의 불안정성과 방전안정화에 기여하고 있다. charge-pump방식으로 스위치류의 내압을 저감하므로 cost면에서 매우 유리한 조건을 확립하였으며 CIM(Current Injection Method)방식의 적용으로 high speed 에너지 회수를 가능하게 하였다. 그리고 제안회로의 동작을 모드별로 해석하였으며, 실제 32" 패널에 적용하여 실험함으로써 제안한 회로의 유용성을 입증하였다.

• 한국대기환경학회지
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• 제12권4호
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• pp.487-494
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• 1996

Simultaneous effects of $C_2H_4$ injection and heterogeneous chemical reactions on non-thermal plasma process to remove $SO_2$ and NOx from flue gas were investigated in the present experimental study. The present results showed that 40% of the electrical power can be reduced in $C_2H_4$ injection and heterogeneous chemical reaction are simultaneously included in the non-thermal plasma precess. As an effort to apply the non-thermal plasma technique to practical flue gas treatment system, a wire-plate type reactor which has technically similar geometry of industrial electrostatic precipitators is used instead of other types of reactors, such as wire-cylinder, packed-bed and surface discharge which are inappropriate to industrial application. In the present study, the photo pictures of positive streamer corona taken by ICCD camera, voltage and current oscillograms, and design criteria of a wire-plate type reactor are also shown, which are needed for industrial application of the non-thermal plasma process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.262.2-262.2
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• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.

• International Journal of Computer Science & Network Security
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• 제24권6호
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• pp.200-206
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• 2024

Laser induced breakdown spectroscopy (LIBS) technique has been used for the elemental composition of the soils. In this technique, a high energy laser pulse is focused on a sample to produce plasma. From the spectroscopic analysis of such plasma plume, we have determined the different elements present in the soil. This technique is effective and rapid for the qualitative and quantitative analysis of all type of samples. In this work a Q-switched Nd: YAG laser operating with its fundamental mode (1064 nm laser wavelength), 5 nanosecond pulse width, and 10 Hz repetition rate was focused on soil samples using 10 cm quartz lens. The emission spectra of soil consist of Iron (Fe), Calcium (Ca), Titanium (Ti), Silicon (Si), Aluminum (Al), Magnesium (Mg), Manganese (Mn), Potassium (K), Nickel (Ni), Chromium (Cr), Copper (Cu), Mercury (Hg), Barium (Ba), Vanadium (V), Lead (Pb), Nitrogen (N), Scandium (Sc), Hydrogen (H), Strontium (Sr), and Lithium (Li) with different finger-prints of the transition lines. The maximum intensity of the transition lines was observed close to the surface of the sample and it was decreased along the axial direction of the plasma expansion due to the thermalization and the recombination process. We have also determined the plasma parameters such as electron temperature and the electron number density of the plasma using Boltzmann's plot method as well as the Stark broadening of the transition lines respectively. The electron temperature is estimated at 14611 °K, whereas the electron number density i.e. 4.1 × 10¹⁶ cm^-3 lies close to the surface.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.161.2-161.2
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• 2015

Melanin is a black pigment, responsible for hair and skin color. In order to find the melanin stimulatory technique which prove useful for a gray and a white hair-preventive agent or tanning agent, we developed atmospheric pressure plasma jet (APPJ) and tested for tyrosinase activity and melanin production in melanoma (B16F10) cells in vitro. We found plasma dose dependent increase in melanin production. To explore the contributing mechanism in melanin synthesis, intracellular reactive oxygen species (ROS) and MAP kinase signaling pathways were studied. Furthermore, the development of plasma technology for melanin synthesis and planning for in-vivo future studies will be discussed.

• 한국표면공학회지
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• 제29권6호
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• pp.857-861
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• 1996

The influence of rf-plasma operation on the thin film formation containing small particles for Al-Li alloys mainly have been studied as a function of Ar gas pressure and plasma power by means of a 200kV transmission electron microscope (TEM). Under the non-plasma operation, the transition from continuous thin films to clusters of grape-like small particles occurred at Ar gas pressures above 20Pa. Particles were single crystals with clear crystal habit planes. Under the plasma operation, the influence of gas pressures on the film formation at a plasma power of 5W was also examined. Thin films containing particles below 30Pa and the films containing mainly particles above 40Pa were formed. The prominent change of the average particle size was not recognized. The increase of the plasma powers at 20Pa, which formed particles under non-plasma, suppressed growth of particles, and homogeneous films containing very small particles were fabricated. The electric conductivity showed slight decrease with an increase of plasma power.

• Bulletin of the Korean Chemical Society
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• 제18권11호
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• pp.1172-1175
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• 1997

Calcium isotopic ratios are precisely measured by removing isobaric interferences originated from water in the plasma. Liquid Ar cryogenic trap combined with membrane desolvator could eliminate backgrounds at m/z 42 and 44. Slow drift of ICP-MS is corrected by the frequent running of the standards. It is found necessary to separate Ca from the sample matrix using Ca oxalate precipitation technique. Currently, the RSD is 0.5-1.0% for 2 minutes of measurement but is expected to be improved if the measurement time is increased. The technique was applied to 42Ca enriched baby fecal samples and successfully determined 42Ca/44Ca ratio changes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.320-320
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• 2013

Film thickness monitoring with plasma impedance monitoring (PIM) is demonstrated for small area $SiO_2$ RF plasma etching processes in this work. The chamber conditions were monitored by the impedance signal variation from the I-V monitoring system. Moreover, modified principal component analysis (mPCA) was applied to estimate the $SiO_2$ film thickness. For verification, the PIM was compared with optical emission spectroscopy (OES) signals which are widely used in the semiconductor industry. The results indicated that film thickness can be estimated by 1st principal component (PC) and 2nd PC. Film thickness monitoring of small area $SiO_2$ etching was successfully demonstrated with RF plasma harmonic impedance monitoring and mPCA. We believe that this technique can be potentially applied to plasma etching processes as a sensitive process monitoring tool.

• 한국전기전자재료학회논문지
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• 제23권1호
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• pp.10-13
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• 2010

The plasma processing technologies of thin film deposition and surface treatment technique have been applied to many industrial fields. This study is purposed Large-area uniformity and surface treatment on the stainless substrate. We treat surface of stainless by $CF_4$ plasma. $CF_4$ plasma is generated by using SPM(Scanning plasma method)which is kind a of CVD. Generally, SPM has been used for uniform surface treatment using a crossed electromagnetic field. The optimum discharge condition has been studied for the gas pressure, the magnetic flux density and the distance between substrate and electrodes. In result, contact angle is increased by surface treatment using $CF_4$ Plasma. Therefore we expect that SPM to control contact angle is applied to many industries.