• Journal of the Korea Academia-Industrial cooperation Society
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• 제9권2호
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• Corrosion Science and Technology
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• 제9권3호
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• pp.122-128
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• 2010

The corrosion of the flexible tube in the automobile exhaust system is caused by the ambient water and chloride ions. Since welding is one of the key processes for the flexible tube manufacturing, it is required to select a proper welding method to prevent the flexible tube corrosion and to increase its lifetime. There are many studies about the efficiency of the welding method, but no systematic study is performed for the effect of welding method on the corrosion property of the austenitic stainless weldment. The aim of the present study is to provide information on the effect of two different welding methods of TIGW (tungsten inert gas welding) and PAW (plasma arc welding) on the corrosion property of austenitic stainless steel weldment. Materials used in this study were two types of the commercial austenitic stainless steel, STS321 and XM15J1, which were used for flexible tube material for the automotive exhaust system. Microstructure was observed by using optical microscopy (OM) and scanning electron microscopy (SEM). To evaluate the corrosion behavior, potentiodynamic and potentiostatic tests were performed. The chemical state of the passive film was analyzed in terms of XPS depth profile. Metallurgical analysis show that the ferrite content in fusion zone of both STS321 and XM15J1 is higher when welded by PAW than by TIGW. The potentiodynamic and potentiostatic test results show that both STS321 and XM15J1 have higher transpassive potential and lower passive current density when welded by PAW than by TIGW. XPS analysis indicates that the stable $Cr_2O_3$ layer at the outermost layer of the passive film is formed when welded by PAW. The result recommends that PAW is more desirable than TIGW to secure corrosion resistance of the flex tube which is usually made of austenitic stainless steel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제23권9호
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Journal of The Korean Astronomical Society
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• 제34권4호
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• pp.309-311
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• 2001

Strong thermal X-ray emission, called Galactic Ridge X-ray Emission, is observed along the Galactic plane (Koyama et al. 1986). The origin of hot ($\~$7 keV) component of GRXE is not known, while cool ($\~$0.8 keV) one is associated with supernovae (Kaneda et al. 1997, Sugizaki et al. 2001). We propose a possible mechanism to explain the origin; locally strong magnetic fields of $B_{local}\;\~30{\mu}G$ heat interstellar gas to $\~$7 keV via magnetic reconnection (Tanuma et al. 1999). There will be the small-scale (< 10 pc) strong magnetic fields, which can be observed as $(B)_{obs} \;\~3{\mu}G$ by integration of Faraday Rotation Measure, if it is localized by a volume filling factor of f $\~$ 0.1. In order to examine this model, we solved three-dimensional (3D) resistive magnetohydrodynamic (MHD) equations numerically to examine the magnetic reconnect ion triggered by a supernova shock (fig.l). We assume that the magnetic field is Bx = 30tanh(y/20pc) $\mu$G, By = Bz = 0, and the temperature is uniform, at the initial condition. We put a supernova explosion outside the current sheet. The supernova-shock, as a result, triggers the magnetic reconnect ion, and the gas is heatd to > 7 keV. The magnetic reconnect ion heats the interstellar gas to $\~$7 keV in the Galactic plane, if it occurs in the locally strong magnetic fields of $B_{local}\;\~30{\mu}G$. The heated plasma is confined by the magnetic field for $\~10^{5.5} yr$. The required interval of the magnetic reconnect ions (triggered by anything) is $\~$1 - 10 yr. The magnetic reconnect ion will explain the origin of X-rays from the Galactic ridge, furthermore the Galactic halo, and clusters of galaxies.

• Korean Journal of Materials Research
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• 제30권3호
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• pp.142-148
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• 2020

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 ℃ and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 ㎠ scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 ℃ growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 ㎠/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.

• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.3025-3029
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• 2014

To realize copper-based electrode materials for printed electronics applications, it is necessary to improve the adhesion strength between conductive lines and the substrate. Here, we report the preparation of Cu pastes using (3-glycidoxypropyl) trimethoxysilane (GPTMS) prepolymer as an adhesion promoter (AP). The Cu pastes were screen-printed on glass and polyimide (PI) substrates and sintered at high temperatures (> $250^{\circ}C$) under a formic acid/$N_2$ environment. According to the adhesion strengths and electrical conductivities of the sintered Cu films, the optimized Cu paste was composed of 1.0 wt % GPTMS prepolymer, 83.6 wt % Cu powder and 15.4 wt % vehicle. After sintering at $400^{\circ}C$ on a glass substrate and $275^{\circ}C$ on a PI substrate, the Cu films showed the sheet resistances of $10.0m{\Omega}/sq$. and $5.2m{\Omega}/sq$., respectively. Furthermore, the sintered Cu films exhibit excellent adhesion properties according to the results of the ASTM-D3359 standard test.

• Proceedings of the KIEE Conference
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.489-494
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• 2004

In this paper, we investigated impurities content and thermal properties showing by changing the content of carbon black which is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES(Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter. And then heat capacity(${\Delta}H$) and melting temperature(Tm), specific heat(Cp) were measured by DSC(Differential Scanning Calorimetry). The dimension of measurement temperature was $0[^{\circ}C]\;to\;200[^{\circ}C]$, and rising temperature was $4[^{\circ}C/min]$. Impurities content was highly measured according to increasing the content of carbon black from this experimental result also density was increased according to these properties. Specially, impurities content values of the A1 and A2 of existing resins were measured more than 4000[ppm]. Heat capacity, melting temperature, and specific heat from the DSC results were simultaneously decreased according to increasing the content of carbon black. Because metallic impurities of carbon black having Fe, Co, Mn, A1 and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

• Journal of the Korean Society for Heat Treatment
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• 제31권4호
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• pp.187-193
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• 2018

In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

• Journal of The Korean Astronomical Society
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• 제54권2호
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• pp.61-70
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• 2021

We investigate 20 post-coronal mass ejection (CME) blobs formed in the post-CME current sheet (CS) that were observed by K-Cor on 2017 September 10. By visual inspection of the trajectories and projected speed variations of each blob, we find that all blobs except one show irregular "zigzag" trajectories resembling transverse oscillatory motions along the CS, and have at least one oscillatory pattern in their instantaneous radial speeds. Their oscillation periods are ranging from 30 to 91 s and their speed amplitudes from 128 to 902 km s-1. Among 19 blobs, 10 blobs have experienced at least two cycles of radial speed oscillations with different speed amplitudes and periods, while 9 blobs undergo one oscillation cycle. To examine whether or not the apparent speed oscillations can be explained by vortex shedding, we estimate the quantitative parameter of vortex shedding, the Strouhal number, by using the observed lateral widths, linear speeds, and oscillation periods of the blobs. We then compare our estimates with theoretical and experimental results from MHD simulations and fluid dynamic experiments. We find that the observed Strouhal numbers range from 0.2 to 2.1, consistent with those (0.15-3.0) from fluid dynamic experiments of bluff spheres, while they are higher than those (0.15-0.25) from MHD simulations of cylindrical shapes. We thus find that blobs formed in a post-CME CS undergo kinematic oscillations caused by fluid dynamic vortex shedding. The vortex shedding is driven by the interaction of the outward-moving blob having a bluff spherical shape with the background plasma in the post-CME CS.