A Study on Thermal Properties and Impurities Measurement of Semiconductive Shield by ICP-AES

ICP-AES에 의한 반도전재료의 불순물 측정 및 열적특성에 관한 연구

In this paper, we investigated impurities content and thermal properties showing by changing the content of carbon black which is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES(Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter. And then heat capacity(${\Delta}H$) and melting temperature(Tm), specific heat(Cp) were measured by DSC(Differential Scanning Calorimetry). The dimension of measurement temperature was $0[^{\circ}C]\;to\;200[^{\circ}C]$, and rising temperature was $4[^{\circ}C/min]$. Impurities content was highly measured according to increasing the content of carbon black from this experimental result also density was increased according to these properties. Specially, impurities content values of the A1 and A2 of existing resins were measured more than 4000[ppm]. Heat capacity, melting temperature, and specific heat from the DSC results were simultaneously decreased according to increasing the content of carbon black. Because metallic impurities of carbon black having Fe, Co, Mn, A1 and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.