• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

• Polymer(Korea)
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• v.24 no.5
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• pp.673-681
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• 2000

Electrically conductive composites have been prepared by treating fabrics with oxidizing agent and exposing them to aniline, which deposited a substantial amount of conductive polymer within the interstices of the material. However the conductivity of the composite fabrics was limited by the irregular deposition of the conductive polymer layer. To improve the conductivity of polyaniline/nylon 6 composite fabrics, we modified the surface characteristics of nylon 6 fabrics by various plasma treatments and increased diffusion and adsorption of aniline by ultrasonic treatments. By the oxygen plasma treatment, attachment of functional groups such as C-O and C-OH increased on the surface of nylon 6 fiber, which promoted adhesion to polyaniline resulting in the higher add-on and electrical conductivity. Electrical conductivities of polyaniline/nylon 6 composite fabrics were highly increased by ultrasonic treatment, which assisted the diffusion of aniline into the inside of nylon fabrics by cavitation and vibration. Also, the effects of monomer concentration and the number of deposition cycles on the nylon 6 fabric conductivity Were investigated. As a result, the fabric conductivity increased with the monomer concentration and the number of polymerization deposition cycles.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.3
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• pp.38-42
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• 2000

Plasma polymerized thin films were manufactured inter-electrode coupled plasma polymerization apparatus. The deposition rate reached its maximum between 40[W] and 100[W]. In the ESCA analysis, peaks revealing -CH2, -CH, -C- were present at 285.4 and 285.5[eV] respectively. The C=O peak at 532.8[eV] and the C-O peak at 533.8[eV], which were grouped with an unignorable amount of oxygen were conformed. In ESR analysis, the curve revealing strong amplification was in saturation, which was affected by weak power. This is considered as a -CH-Ch=Ch- structure containing the Allyl group. The relative permittivity of the plasma polymerized thin films was about 3.5 at a frequency of 100[Hz]∼200[kHz]. The dissipation factor showed allow value of 0.008.

• Polymer(Korea)
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• v.33 no.1
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• pp.79-83
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• 2009

Thin electric insulation layers were coated on aluminum plates and aluminum condenser cases by plasma polymerization of HMDSO+$O_2$. Electric resistances of the films were higher than 1.0 M$\Omega$ if they are thicker than 0.5 ${\mu}m$ independently of the type of films but their surface morphologies and adhesion strengths were dependent on the process conditions. Deposition rate and adhesion strength of the films were dependent on $O_2$/HMDSO flow ratio and discharge power. The best result was obtained at $O_2$/HMDSO flow ratio of 4 and discharge power of 60 W. Adhesion strength could also be highly improved if aluminum was pre-treated in boiling water for 30 min through the formation of Al-O-Si bonding between the film and the aluminum surface. The coated films showed excellent chemical and thermal resistances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.28-32
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• 1993

A deposition rate of styrene thin films is linearly increased, but one of benzene thin films is nonlinearly increased with increasing discharge power under maintaining a polymerization time, pressure and monomer flow rate. And, the reduction of transmittance at shortwave is larger than that of transmittance at longwave. The refractive index with wavelength is various from 1.55 to 1.65. The refractive index of their thin films is decreased with increasing discharge power. Also, it is known that measured results are valid because the calculation of the extinction coefficient is about $10^3$ within variation of refractive index.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.160-161
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• 2007

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer를 이용하여 RF power와 압력에 따라 막을 증착하였다. 증착된 막은 power/pressure (W/Torr)가 증가할수록 비정질 탄소막은 Raman 스펙트럼에서 D peak가 증가하였고, ring 구조의 막을 형성하였다. 또한 ring 구조의 막이 형성됨으로써 hardness와 modulus는 각각 12 GPa과 85 GPa로 선형적으로 증가하는 것으로 나타났다.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1189-1192
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• 1993

Organic thin films were fabricated an using interelectrode capacitively coupled type plasma polymerizaion apparatus, and their optical properties were investigated. A deposition rate of styrene thin films is linearly increased, but one or vinyl-pyridine thin films is nonlinearly increased with increasing of polymerization time, pressure and monomer flow rate. The transmittance of single layer thin films is constant, but that of multi-layer appeared irregular peak with increasing of the number of layers. And then the refractive index of organic thin films is various from 1.55 to 1.65 with wavelength, the extinction coefficient indicated $10^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.312-312
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• 2011

In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).