• 제목/요약/키워드: plasma oxidation

검색결과 698건 처리시간 0.031초

Ti-6Al-4V 합금에 2nd ATO 처리 후 플라즈마 전해 산화법에 의한 생체활성표면형성 (Formation of Bioactive Surface by PEO-treatment after 2nd ATO Technique of Ti-6Al-4V Alloy)

  • Lim, Sang-Gyu;Cho, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.74-74
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    • 2018
  • Ti-6Al-4V alloys have been widely used as orthopedic materials because of their excellent corrosion resistance and mechanical properties. However, it does not bind directly to the bone, so it requires a surface modification. This problem can be solved by nanotube and micropore formation. Plasma electrolytic oxidation (PEO) treatment for micropore, which combines high-voltage spark and electrochemical oxidation, is a new way of forming a ceramic coating on light metals such as titanium and its alloys. This method has excellent reproducibility and can easily control the shape and size of the Ti alloy. In this study, formation of bioactive surface by PEO-treatment after $2^{nd}$ ATO technique of Ti-6Al-4V alloy was invesgated by various instrument. Nanotube oxide surface structure was formed on the surface by anodic oxidation treatment in 0.8 wt.% NaF and 1M $H_3PO_4$ electrolytes. After nanotube formation, nanotube layer was removed by ultrasonic cleaning. PEO-treatment was carried out at 280V for 3 minutes in the electrolytic solution containing the bioactive substance (Mg, Zn, Mn, Sr, and Si). The surface of Ti-6Al-4V alloy was observed by field emission scanning electron microscopy (FE-SEM, S-4800 Hitachi, Japan). An energy dispersive X-ray spectrometer (EDS, Inca program, Oxford, UK) was used to analyze the spectra of physiologically active Si, Mn, Mg, Zn, and Sr ions. The PEO film formed on the Ti-6Al-4V alloy surface was characterized using an X-ray diffractometer (TF-XRD, X'pert Philips, Netherlands). It is confirmed that bioactive ions play an essential role in the normal bone growth and metabolism of the human skeletal tissues.

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Formation of Anodic Films on Pure Mg and Mg alloys for Corrosion Protection

  • Moon, Sungmo;Nam, Yunkyung
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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    • pp.16-16
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    • 2012
  • Mg and its alloys have been of great interest because of their low density of 1.7, 30% lighter than Al, but their wide applications have been limited because of their poor resistances against corrosion and/or abrasion. Corrosion resistance of Mg alloys can be improved by formation of anodic films using anodic oxidation method in aqueous electrolytes. Plasma electrolytic oxidation (PEO) is one of anodic oxidation methods by which hard anodic films can be formed as a result of micro-arc generation under high electric field. PEO method utilize not only substrate elements but also chemical components in electrolytes to form anodic films on Mg alloys. PEO films formed on AM50 magnesium alloy in an acidic fluozirconate electrolyte were observed to consist of mainly $ZrO_2$ and $MgF_2$. Liu et al reported that PEO coating on AM30 Mg alloy consists of $MgF_2$-rich outer porous layer and an MgO-rich dense inner layer. PEO films prepared on ACM522 Mg die-casting alloy in an aqueous phosphate solution were also reported to be composed of monoclinic $Mg_3(PO_4)_2$. $CeO_2$-incorporated PEO coatings were also reported to be formed on AZ31 Mg alloys in $CeO_2$ particle-containing $Na_2SiO_3$-based electrolytes. Magnesium tin hydroxide ($MgSn(OH)_6$) was also produced on AZ91D alloy by PEO process in stannate-containing electrolyte. Effects of $OH^-$, $F^-$, $PO{_4}^{3-}$ and $SiO{_3}^{2-}$ ions and alloying elements of Al and Sn on the formation of PEO films on pure Mg and Mg alloys and their protective properties against corrosion have been investigated in this work. $PO{_4}^{3-}$, $F^-$ and $SiO{_3}^{2-}$ ions were observed to contribute to the formation of PEO films but $OH^-$ ions were found to break down the surface films under high electric field. The effect of pulse current on the formation of PEO films will be also reported.

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토마토와 라이코펜이 전립선암의 예방과 치료에 미치는 영향 (Effects of Tomatoes and Lycopene on Prostate Cancer Prevention and Treatment)

  • 황은선
    • 한국식품영양과학회지
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    • 제33권2호
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    • pp.455-462
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    • 2004
  • 토마토에는 라이코펜과 quercetin, phytoene, phytofluene, cyclolycopene, salicylates 그리고 tomatlne과 같은 다양한 생리활성 물질들이 함유되어 있으며, 이들은 라이코펜과 함께 항암작용에 관여하는 것으로 사료된다. 생리적 농도에서 라이코펜은 세포주기의 정지(arrest)와 세포 자가사멸을 통한 암세포의 생존률을 감소시키고, 사이클린을 조절하며, 세포간의 연락체계를 증가시키는 것으로 보고되고 있다. 라이코펜은 산화에 민감하여 매우 쉽게 산화물질을 만든다. 토마토 제품의 섭취는 혈중 phytoene, phytofluene 그리고 라이코펜 산화물질인 cyclolycopene의 농도를 유의적으로 증가시켰다. 또한 토마토나 토마토 제품을 통한 라이코펜의 섭취는 혈중 라이코펜의 농도를 최고 1.26 $\mu$M까지 증가시켰다. 다양한 암 부위 (cancer sites)를 통한 19건의 동물실험결과, 10건의 실험에서 라이코펜이 효과가 입증되었고, 7건의 실험에서는 통계적인 유의성이 밝혀지지 않았고, 2건의 전립선암 실험에서는 억제효과를 보이지 않았다. 임상실험에서 라이코펜 섭취와 토마토 제품섭취군 모두 백혈구와 전립선에서 의 DNA 산화물질을 감소시킴을 확인하였다. 라이코펜은 암화과정을 방해하는 생리활성 물질로 밝혀졌으나 phytoene, phytofluene 그리고 cyclolycopene의 역할에 관해서는 아직 밝혀져 있지 않다. 따라서 라이코펜과 토마토에 함유되어 있는 다른 식물성 화학성분들(phytochemicals) 간의 상호작용에 관해서는 좀 더 구체적이고 신뢰성 있는 연구가 필요하다.

CoO를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성 (MR Characteristics of CoO based Magnetic tunnel Junction)

  • 정창욱;조용진;안동환;정원철;조권구;주승기
    • 한국자기학회지
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    • 제10권4호
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    • pp.159-163
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    • 2000
  • 절연층으로 CoO를 사용한 스핀의존성 터널링 접합 NiFe(30 nm)/CoO(t)/Co(30 nm-t)에서 터널링 자기저항성질을 연구하였다. 3-gun 스퍼터링 시스템에서 4$^{\circ}$tilt-cut (111)Si을 기판으로, 상부자성층으로 Ni$_{80}$Fe$_{20}$를 사용하였고 Co를 하부 자성층으로 사용하였다. 절연층으로 사용된 CoO른 하부 자성층 Co를 산소 플라즈마 산화법과 상온에서의 자연산화를 통해 얻었다. CoO를 플라즈마 산화법으로 얻은 경우 플라즈마 산화시간이 증가할수록 자기이력곡선에서 반강자성 물질인 CoO에 의해 NiFe와 Co의 보자력이 증가하는 것을 관찰할 수 있었다. 플라즈마 산화된 CoO의 경우, 상온에서 1mA의 감지전류를 흘려줬을 경우 최대 1.2 %의 자기저항비를 얻을 수 있었다. 자연산화법으로 CoO를 얻은 경우 감지 전류 1 mA에서 4.8 %의 자기저항비를 관찰할수 있었고, 감지전류 1.5 mA의 경우 28 %의 자기저항비와 10.9 ㏀$\times$$\mu\textrm{m}$$^2$의 값을 얻을 수 있었다. 저항$\times$면적값이 2.28 ㏀$\times$$\mu\textrm{m}$$^2$일 때 최대 120 %의 자기저항비를 얻을 수 있었다.다.

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Fe3Al, Fe3Al-Cr, Fe3Al-Cr-Mo, Ni3Al 및 Ni3Al-Cr 합금표면에 형성된 산화물 특성분석 (Characterization of Oxide Scales Formed on Fe3Al, Fe3Al-Cr, Fe3Al-Cr-Mo, Ni3Al and Ni3Al-Cr Alloys)

  • 심웅식;이동복
    • 한국재료학회지
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    • 제12권11호
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    • pp.845-849
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    • 2002
  • Alloys of $Fe_3$Al, $Fe_3$Al-6Cr, $Fe_3$Al-4Cr-1Mo, $Ni_3$Al, and $Ni_3$Al-2.8Cr were oxidized at $1000^{\circ}C$ in air, and the oxide scales formed were studied using XRD. SEM, EPMA, and TEM. The oxide scales that formed on $Fe_3$Al-based alloys consisted primarily of $\alpha$-$Al_2$$O_3$ containing a small amount of dissolved Fe and Cr ions, whereas those that formed on $Ni_3$Al-based alloys consisted primarily of $\alpha$-$Al_2$$O_3$, together with a small amount of $NiAl_2$$O_4$, NiO and dissolved Cr ions. For the entire alloys tested, nonadherent oxide scales formed, and voids were inevitably existed at the scale-matrix interface.

무전해 Ni-B 도금을 이용한 플라즈마 디스플레이 버스 전극용 확산방지막의 열처리 영향 (Effect of Heat Treatment of the Diffusion Barrier for Bus Electrode of Plasma Display by Electroless Ni-B Deposition)

  • 최재웅;황길호;홍석준;강성군
    • 한국재료학회지
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    • 제14권8호
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    • pp.552-557
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    • 2004
  • Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

Ultra low temperature polycrystalline silicon thin film transistor using sequential lateral solidification and atomic layer deposition techniques

  • Lee, J.H.;Kim, Y.H.;Sohn, C.Y.;Lim, J.W.;Chung, C.H.;Park, D.J.;Kim, D.W.;Song, Y.H.;Yun, S.J.;Kang, K.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.305-308
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    • 2004
  • We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

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Ne, Ar, Kr 혼합가스에서의 유도결합형 플라즈마 방전특성 (Inductively Coupled Plasma discharge characteristic of Ne, Ar, Kr mixed gas)

  • 허인성;최용성;이종찬;정영일;박대희
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2004년도 학술대회 논문집
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    • pp.9-12
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    • 2004
  • Recently, the environmental problem has received considerable attention. so, many lamps have been developing for environmental requirement and energy efficiency. also, at glow discharge lamp researchers try to reduce energy spending that is power saving lamp. this kind requirement agree with strong points of electrodeless fluorescent lamp has received to now lighting sauce. At low pressure as mTorr I.C.P make high density plasma easily, is good to maintain discharge, has high ionization and does not have failing lighting and losing ability of electron radiation by oxidation and volatilization of electrodes, because this tape does not have electrodes This point of I.C.P can use at electrodeless fluorescent lamp in this study ICP display elements and Ar, Ne, Kr are researched for optical characteristic. each gas is looked into optical characteristic, also mixed gases is experiment for optical characteristic.

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Electrochemical Approach in Plasma Display Panel Glass Melts doped with Sulfate and Sulfide I. Oxygen Equilibrium Pressure

  • Kim, Ki-Dong;Kim, Hyo-Kwang
    • 한국세라믹학회지
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    • 제45권2호
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    • pp.90-93
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    • 2008
  • The oxygen gas behavior in PDP (plasma Display Panel) glass melts doped with sulfate ($SO_4^{-2}$) or blast furnace slag (BFS, $S^{2-}$) or both by means of yttria-stabilized zirconia (YSZ) electrodes was observed after the first fining. The temperature dependence of oxygen equilibrium pressure ($P_{O2}$) in each melt showed typical behavior, namely $P_{O2}$ decreased as temperature decreased. This suggests that an oxidation of $S^{4+}$ to $S^{6+}$ took place. However, the $P_{O2}$-value at constant temperature increased in the following order: BFS$P_{O2}$ of the melt doped with sulfate+BFS was much lower than that of the melt with only sulfate, although only 10% of sulfur was added by the BFS. This behavior can be explained by the redox reaction between sulfide ions in the BFS and dissolved oxygen ions in the melt during the first fining.

Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted $N_2O$ oxidation for thin film transistors

  • Hwang, Sung-Hyun;Jung, Sung-Wook;Kim, Hyun-Min;Kim, Jun-Sik;Jang, Kyung-Soo;Lee, Jeoung-In;Lee, Kwang-Soo;Jung, Won-June;Dhungel, S.K.;Ghosh, S.N.;Yi, J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1462-1464
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    • 2006
  • Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

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