• Corrosion Science and Technology
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• v.9 no.1
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• pp.8-11
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• 2010

During PEO (plasma-electrolytic-oxidation) treatment of titanium, the relationship between the thickness of oxide film and the measured electrical information was investigated. A simple real time monitoring method based on the electrical information being gathered during PEO treatment is proposed. The proposed method utilizes the current flowing from a high frequency voltage source to calculate the resistance of an oxide film, which is converted into the thickness of an oxide film. This monitoring method can be implemented in PEO system in which an oxide film is grown by constant or pulsed voltage/current sources.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.439-446
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• 2017

Plasma electrolyte oxidation (PEO) is a kind of anodization, in which a very high voltage or current is applied to a metal substrate in various electrolytes, allowing distinctly thick thickness of the oxide film with outstanding film properties, such as a good corrosion resistance, mechanical strength, thermal stability, and excellent adhesion to a substrate. Herein, we tried to find the optimal pretreatment conditions among commercially available solutions in order to produce PEO anodizing at relatively low voltage. We characterized the surface morphologies of the sample by scanning electron microscope (SEM), atomic force microscopy (AFM), and investigated color parameters of the pretreated surface of Ti by spectrophotometer.

• Journal of the Korean institute of surface engineering
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• v.55 no.1
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• pp.9-17
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• 2022

This work is concerned with the formation behavior of PEO (Plasma Electrolytic Oxidation) films on Al6082 alloy under the application of direct current (DC) and alternating current (AC) in an alkaline solution. Arc initiation voltage became much lower by the application of AC than DC, and arc initiation time became shorter under DC than AC. The number of pores present in the PEO films was much larger than that on the surface, irrespective of DC and AC. It was also found that the number of pores in the PEO films formed under AC was more than that under DC and the size of pores is smaller under AC than DC. During the formation of PEO films, a lot of heat was generated and solution temperature increased more rapidly under DC than under AC which is attributed to high PEO film formation voltage under DC than AC.

• Journal of the Korean institute of surface engineering
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• v.55 no.5
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• pp.292-298
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• 2022

In this study, PEO (plasma electrolytic oxidation) film formation behavior of AZ31 Mg alloy under application of 300 Hz pulse current was studied by the analyses of V-t curve, arc generation behavior, PEO film thickness and morphology of PEO films with treatment time in 0.05 M NaOH + 0.05 M Na₂SiO₃ + 0.1 M NaF solution. PEO films was observed to grow after 10 s of application of pulse current together with generation of micro-arcs. PEO film grew linearly with treatment time at a growth rate of about 5.58 ㎛/min at 200 mA/cm² of pulse current but increasing rate of film formation voltage became lowered largely with increasing treatment time after passing about 250 V, suggesting that resistivity of PEO films during micro-arc generation decreases with increasing film formation voltage at more than 250 V.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.99-102
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• 2002

We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.142-151
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• 1995

In this research, a thin layer of Cr was coated on the pure Ni and Inconel 601 by PECVD (Plasma Enhanced Chemical Vapor Deposition) in order to study the effect of Cr on the oxidation behavior at high temperature. Cr coated Inconel 601, which was oxidized at $1100^{\circ}C$ for 24 hours, formed a protective $Cr_2O_3$ oxide layer and the resistance to isothermai oxidation was improved. On the other hand, oxidation resistance of Cr coated Inconel 601 at 100$0^{\circ}C$ was not significantly improved, probably due to the formation or insufficient $Cr_2O_3$ layer. But, when oxidized at $1000^{\circ}C$ and $1100^{\circ}C$ for 100 hours, Cr coated Inconel 601 improved isothermal oxidation resistance by the formation of continuous $Cr_2O_3$ external scale and by the development of $Al_2O_3$ subscales. Cr coated Ni formed inner layer of $Cr_2O_3$ within almost pure NiO, which provided additional cation vacancies, thus increasing the mobility of Ni ions in this region. It is believed that this doping effect resulted in an increase in the observed oxidation rate compared with pure Ni and did not improve the oxidation resistance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.387-394
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• 2013

As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2232-2237
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• 2007

Steam reforming and catalytic reforming of $CH_4$ conversion to produce synthesis gas require both high temperatures and high pressure. Non-thermal plasma is considered to be a promising technology for the hydrogen rich gas production from methane. In this study, three phase AC GlidArc plasma system was employed to investigate the effects of gas composition, gas flow rate, catalyst reactor temperature and applied electric power on the $CH_4$ and $H_2$ yield and the product distribution. The studied system consisted of three electrode and it connected AC generate power system different voltages. In this study, air was used for the partial oxidation of methane. The results showed that increasing gas flow rate, catalyst reactor temperature, or electric power enhanced $CH_4$ conversion and $H_2$ concentration. The reference conditions were found at a $O_2$/C molar ratio of 0.45, a feed flow rate of 4.9 ${\ell}$/min, and input power of 1kW for the maximum conversions of $CH_4$ with a high selectivity of $H_2$ and a low reactor energy density.

• Journal of the East Asian Society of Dietary Life
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• v.16 no.4
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• pp.399-407
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• 2006

We evaluated the effects of butterbur (Petasites japonicus Maxim) addition to the diet on lipid profiles and antioxidant biomarkers such as total glutathionine, TBARS value, carbonyl value, GPx, GR, SOD and paraoxonase activity in the plasma or liver of mice. The distribution of body fat deposition, total cholesterol (TC) contents, and atherogenic index in the plasma were significantly decreased in the butterbur group. The levels of GSH and the activity of GR and SOD were significantly higher in the liver of the butterbur group than in that of the control group. Lipid oxidation of the liver and kidney and protein oxidation of the liver and heart were decreased in the butterbur group. Additionally, the DNA damage, as determined using the comet assay (single cell gel assay) with alkaline electrophoresis and as quantified by measuring the tail length (TL), was decreased in the butterbur group. The results of the present study showed that a diet with added butterbur exerts degenerative disease-protective effects on oxidative DNA damage and lipid peroxidation.