• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.281-283
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• 2005

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.328-339
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• 2014

In this article, plasma monitoring tools and mulivariate analysis techniques were reviewed. Optical emission spectroscopy was reviewed for a chemical composition analysis tool and RF V-I probe for a physical analysis tool for plasma monitoring. Multivariate analysis techniques are discussed to the sensitivity improvement. Principal component analysis (PCA) is one of the widely adopted multivariate analysis techniques and its application to end-point detection of plasma etching process is discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.3
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• pp.515-520
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• 2009

In this paper, the monitoring system was developed measuring the light signal emitted from the plasma in aluminum laser welding. Spectrum of plasma was measured using a spectrometer, and the photodiode was selected based on the spectrum analysis. The sensor signals for various welding conditions could be obtained, the characteristic of signal was closely related to the intensity and stability of plasma through mean value of signal and FFT analysis. The reason of signal fluctuation was behavior of plasma and keyhole and it was also connected with the surface bead shape of weld.

• Vacuum Magazine
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• v.2 no.4
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• pp.27-32
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• 2015

Plasma diagnosis and multivariate analysis techniques for plasma processes are reviewed. The principles and applications of optical emission spectroscopy (OES) and VI probe are discussed briefly. The research results of principal component analysis (PCA), one of the widely used multivariate analysis techniques for plasma process monitoring is discussed in this article.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1844-1845
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• 2007

A CUSUM control chart was used to monitor semiconductor plasma equipment. The performance of plasma monitoring was evaluated with various combinations of design variables involved in CUCUM control chart. Experimental data collected by using a real-time matching monitoring system include electrical positions of impedance and phase positions, and reflected power. The evaluation revealed that by determining specific design variables plasma states could be more strictly monitored.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.75-78
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• 2000

This paper is estimated to enhance yield improvement and device reliability using PDM(plasma damage monitoring) system capable of in-suit detection about plasma nonuniformity. PDM Tool is the non-contact method of wafer and surface potential electrode(kelvin probe). Its tool measures Vox(oxide barrier) with charge created by plasma. It's possible to inspect the wafer damage generated by plasma charge and analysis of in-situ monitoring data. we obtained the good data which is continuously prevented from plasma damage using its tool for 10weeks. This tool is contributed to preventive steps contemporaneously inspecting the difference of inter-chamber.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.230-235
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• 1997

During laser welding, a laser induced matal vapour and plasuma is formed. The plasma shows strong fluctuation combined with acoustic sound emission. On-line monitoring of the process is possible by measuring and analysing the plasma and acoustic sound emission. This paper introduce the method of on line process monitoring in the laser beam welding and analysis being monitoring signal. The results show the complementary information on the process.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.26-33
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• 2002

This study was undertaken to obtain the fundamental knowledges on the weld deflects and it's realtime monitoring method. The paper describes the results of high speed photography, acoustic emission (AE) detection and plasma light emission (LE) measurements during $CO_2$ laser welding of STS 304 stainless steel and A5083 aluminum alloy in different welding condition. The characteristic frequencies of plasma and keyhole fluctuations at different welding speed and shield gases were measured and compared with the results of Fourier analyses of temporal AE and LE spectra, and they had considerably good agreement with keyhole and plasma fluctuation. Namely, the low frequency peaks of AE and LE shifted to higher frequency range with the welding speed increase, and leer the argon shield gas it was higher than that in helium and nitrogen gases. The low frequencies dominating in fluctuation spectra of LE probably reflect keyhole opening instability. It is possible to monitor the weld bead deflects by analyzing the acoustic and/or plasma light emission signals.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.142-150
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• 2015

A failure analysis of tungsten filaments used in quadrupole mass spectrometer for plasma process monitoring was carried by using SEM and EDS. Failed at high temperature, filaments showed two kinds of failure modes. The one is that diameter of filament became thinner gradually and finally snapped. The other is that filament abruptly snapped almost at a right angle. The EDS analysis showed Fe and C, including W and Fe, on the surface of failed filament. when failed filaments were treated with plasma in mixture of Ar and $CF_4$, the amount of Fe and C decreased. The failure analysis of filament showed that the cause of filament failure is thermal evaporation and grain growth of tungsten at high temperature.

• Journal of IKEEE
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• v.20 no.1
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• pp.9-15
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• 2016

The endpoint detection (EPD) is the most important technique in plasma etching process. In plasma etching process, the Optical Emission Spectroscopy (OES) is usually used to analyze plasma reaction. And Plasma Impedance Monitoring (PIM) system is used to measure the voltage, current, power, and load impedance of the supplied RF power during plasma process. In this paper, a new decision making algorithm is proposed to improve the performance of EPD in SiOx single layer plasma etching. To enhance the accuracy of the endpoint detection, both OES data and PIM data are utilized and a newly proposed decision making algorithm is applied. The proposed method successfully detected endpoint of silicon oxide plasma etching.