• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• ETRI Journal
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• v.21 no.3
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• pp.16-21
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• 1999

After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.91-96
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• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.1-5
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• 1977

The scattering of a electromagnetic wave by a perfectly conducting circular cylinder with a sheath immersed in a compressible plasma is treated. The total scattering cross section and the back scattering cross section are obtained for the case of the incident electromagnetic wave. Numerical results are calculated by computer and presented in graphs together with discussions.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.4
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• pp.274-281
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• 2010

This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part is an ICP (Inductively Coupled Plasma) for high integration by using ferrite core. The second part is a CCP (Capacitive Coupled Plasma) to control uniformity of whole cells. Proposed DFPS can achieve high productivity improvement required for semiconductor equipment industry. The proposed plasma system is analyzed, simulated and experimentally verified with a matching equipment at 27.12MHz and 400kHz.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.10-13
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• 2010

We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.29B no.1
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• pp.67-75
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• 1992

A new method of driving the PDP(Plasma Display Panel) was proposed and its characteristics were investigated. Applying high frequency non-discharge pulses to an auxiliary anode resulted an increased region of stable operation, decreased delay time and increased light intensity. It is suggested that PDP with DPM (Double Pulse Memory) drive technique improves the delay time, luminance, region of stable operation and luminous efficacy compared to PDP with PPM(Planar Pulse Memory) drive technique developed by NHK Lab. in Japan.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.114-117
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• 2017

Plasma characteristics of two-dimensional inductively coupled discharge simulation is investigated. Impedance of an inductively coupled plasma discharge was considered. Voltage drops across antenna coils and current variation between coils made different profiles of plasma characteristics. Importance of the capacitive field effect in some case was analyzed.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.236-240
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• 2004

In this paper we examine the reflection characteristics of dielectric microstrip lines with open-ended termination containing an optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated by the transmission line model. To estimate theoretically the characteristic response of identical systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time and frequency response in microwave systems have been calculated using an equivalent circuit model.

• Journal of Power Electronics
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• v.9 no.6
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• pp.884-891
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• 2009

An address voltage stabilization circuit for the single-side driving (SSD) method for AC plasma display panels (PDP) is proposed. The single-side driving method, which eliminates a common sustaining driver, uses only two electrodes in a three electrode AC PDP structure. The high-impedance (Hi-Z) mode operation of the data drive ICs during the sustaining period is needed for surface gas-discharge without misfiring in the SSD method but it produces the problem that the address voltage increases up to the breakdown voltage. The proposed circuit based on a flyback converter can stabilize the address voltage under the breakdown voltage and provide better surface gas-discharge performance without any misfiring in the SSD scheme.