• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.154-158
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• 2010

Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.417-420
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• 2004

The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.513-516
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• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• YAKHAK HOEJI
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• v.47 no.6
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• pp.422-431
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• 2003

The use of recombinant human erythropoietin (rhEPO), a stimulator of erythropoiesis, banned in sports because of the medical risk associated with thrombosis. Due to analytical difficulties to differentiate between natural human EPO (hEPO) and rhEPO, blood parameters of erythropoiesis such as contents of hemoglobin (cut-off value <17.5 g/d l for man, and < 16.0 g/dl for women), hematocrit and reticulocytes (cut-off value <2.0%) were measured to focus the misuse of rhEPO. We conducted anti-doping test for 122 blood samples of the World Cup athletes. The mean values of key parameters are as follows; 14.5$\pm$1.0 g/dl for hemoglobin, 41.7$\pm$2.8% for hematocrit, and 1.3$\pm$0.4% for reticulocyte. Blood sample was found to be stable up to 8 hours for the reticulocyte measurement. In addition, the soluble transferrin receptor and ferritin levels were measured by immunoassay methods using plasma samples (n=28) in which the mean value was 0.8$\pm$0.5 $\mu\textrm{g}$/$m\ell$ and 54.6$\pm$33.7 ng/$m\ell$, respectively. The results indicate that all samples tested were negative for the blood parameters of indirect anti-doping test for hEPO misuse. The statistical evaluation suggest that several other parameters such as red blood cell, mean corpuscular hemoglobin concentration, mean corpuscular volume, mean corpuscular hemoglobin and white blood cell could be considered as factors influencing hEPO function in addition to five parameters mentioned.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.5-6
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• 2009

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.49-53
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• 1999

We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CH4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CH4 plasma exposure for 140 sec on a 5 nm DLC layer. N2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of the DLC. The optimum [N2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/$\mu\textrm{m}$. It was found that the hydrogen-free DLC has a stable electron emitting property.

• Journal of Welding and Joining
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• v.21 no.4
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• pp.46-55
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• 2003

TiO$_2$-WO$_3$(8.2wt%) coatings were prepared by the APS (Atmospheric Plasma Spraying) process to clarify the relationship between the process parameters(H$_2$ gas flow rate of plasma 2nd gas and spraying distance) of the APS coating and photo-decomposition efficiency kinetics of the MB(methylene blue) aqueous solution decomposition and to understand the effect of addition of WO$_3$ on photocatalytic properties of TiO$_2$ sprayed coating. Further, the temperature and velocity of flying particles were measured by DPV-2000 to investigate the relationship between microstructure of coatings and process parameters. Properties of coatins were investigated by XRD, SEM, XPS, RAMAN, UV/VIS spectrometer. In case of the TiO$_2$-WO$_3$(8.2wt%) coating, it had a lower anatase fraction than that of pure-TiO$_2$ coatings because of flying in the higher temperature plasma plume by the heavy weight of TiO$_2$, WO$_3$. And, when WO$_3$ added powders were spayed, the doping effects of W ions substituted into the Ti ion sites was not occured during melting and solidification cycles of spraying. It was found that the addition of WO$_3$ was ineffective effective on increasing photo-decomposition efficiency of TiO$_2$ sprayed coating.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1227-1232
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.