• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.748-751
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• 2003

The electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDPs) have been experimentally investigated by a micro Langmuir probe and the high speed discharge images in this experiment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.526-526
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• 2013

Plasma technology isbeing developed for a range of medical applications including wound healing. However, the effect of plasma on many cells and tissues is unclear. Cell migration and cell proliferation are very important biological processes which are affected by plasma exposure and might be a potential target for plasma therapy during wound healing treatment. In this study, we confirmed the plasma exposure time and incubation time after plasma treatment in skin fibroblast (L-929 cells) to evaluate the optimal conditions forplasma exposure to the cell in-vitro. In addition, we used a scratch method to generate artificial wound for evaluating the cell migration by plasma treatment. Where, the cells were treated with plasma and migration rate was observed by live-cell imaging device. To find the cell proliferation, cell viability assay was executed. The results of this study indicate the increased cell proliferation and migration on mild plasma treatment. The mechanisms for cell migration and cell proliferation after plasma treatment for future studies will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.795-798
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• 2008

The discharge characteristics of a flat plasma backlight with long electrode gap are investigated. The effect of operating voltage and repetition rate on brightness and luminance efficiency is investigated. A new high efficacy mode is found at low frequencies around 15-40 KHz; a lumen efficacy of 15.3 lm/W is achieved at a luminance of $2400\;cd/m^2$. In the high brightness mode, present at high voltage, we find a maximum luminance of $5900\;cd/m^2$ at 30KHz.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.2
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• pp.7-16
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• 1996

• Electrical & Electronic Materials
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• v.13 no.8
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• pp.44-50
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• 2000

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1323-1324
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• 2008

We developed the Hyper-thermal Neutral Beam (HNB) sputtering process as a plasma damage free process for ITO top anode deposition on inverted Top emission OLED (ITOLED). For examining the effect of the HNB sputtering system, Inverted Bottom emission OLEDs (IBOLED) with ITO top anode electrode were fabricated; the characteristics of IBOLED using HNB sputtering process shows significant suppression of plasma induced damage.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.764-767
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• 2003

We have experimentally investigated the influence of wall charge configurations prior to addressing discharge on dynamic margin in AC plasma display panel. In this experiment, we have analyzed the quantity and polarity of wall charge accumulated on the front and rear dielectrics just prior to the addressing discharge under the conventional driving sequence.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.513-514
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combination of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self-dc bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.