• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.172-179
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• 1999

The axial distributions of plasma density in a helical resonator plasma with the external magnetic field have been measured using Langmuir probes. Net RF power is set to 200W and chamber pressure is varied from 0.4 mTorr to 100mTorr there are three kinds of eternal magnetic field structure applied on the helical resonator plasma. One is a uniform magnetic field, the second is a positive gradient magnetic field and the third is a negative gradient magnetic field. In the three magnetic field structures, the negative gradient magnetic field is found to show the highest increase in plasma density on the substrate compared with other magnetic structures. Plasma density profile in helical resonator is well consistent with electromagnetic field pattern obtained by computer simulation. It is also found that axial magnetic fields do not affect plasma density distribution in the plasma reactor region, but induce the increase of plasma density in the process chamber region. In order to avoid the nonuniformity of radial density profile, weak magnetic fields under 100G are applied.

• Journal of Magnetics
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• v.21 no.2
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• pp.222-228
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• 2016

Correlation between coil configurations and the discharge characteristics such as plasma density and the electron temperature in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux density distributions as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher. The plasma density increased up to 60.7% by arranging coils (or optimizing magnetic flux density distributions inside the etcher) properly although the magnetic flux density on the center of the substrate holder was fixed at 7 Gauss.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.195.1-195.1
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• 2016

Currently, as Plasma application is expanded to the industrial and medical industrial, low temperature plasma applications became important. Especially in medical and biology, many researchers have studied about generated radical species in atmospheric pressure low temperature plasma directly adapted to human body. Therefore, so measurement their plasma parameter is very important work and is widely studied all around world. One of the plasma parameters is electron density and it is closely relative to radical production through the plasma source. some kinds of method to measuring the electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods have very expensive cost and complex configuration to composed of experiment system. We selected Michelson interferometer system which is very cheap and simple to setting up, so we tried to measuring electron density by laser interferometer with laser beam chopping module for measurement of temporal phase difference in plasma jet. To measuring electron density at atmospheric pressure Ar plasma jet, we obtained the temporal phase shift signal of interferometer. Phase difference of interferometer can occur because of change by refractive index of electron density in plasma jet. The electron density was able to estimate with this phase difference values by using physical formula about refractive index change of external electromagnetic wave in plasma. Our guiding laser used Helium-Neon laser of the centered wavelength of 632 nm. We installed chopper module which can make a 4kHz pulse laser signal at the laser front side. In this experiment, we obtained more exact synchronized phase difference between with and without plasma jet than reported data at last year. Especially, we found the phase difference between time range of discharge current. Electron density is changed from Townsend discharge's electron bombardment, so we observed the phase difference phenomenon and calculated the temporal electron density by using phase shift. In our result, we suggest that the electron density have approximately range between 1014~ 1015 cm-3 in atmospheric pressure Ar plasma jet.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.140.1-140.1
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• 2015

Currently, As Plasma application is expanded to the industrial and medical industrial, Low temperature plasma characteristics became important. Especially in Medical industrial, Low temperature plasma directly adapted to human skin, so their plasma parameter is important. One of the plasma parameters is electron density, some kinds of method to measuring electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods is expensive to composed of experiment system. Heterodyne interferometer system is cheap and simple to setting up, So we tried to measuring electron density by Laser heterodyne interferometer. To measuring electron density at atmospheric pressure, we need to obtain the phase shift signal. And we use a heterodyne interferometer. Our guiding laser is Helium-Neon laser which generated 632 nm laser. We set up to chopper which can make a laser signal like a pulse. Chopper can make a 4 kHz chopping. We used Needle jet as Ne plasma sources. Interference pattern is changed by refractive index of electron density. As this refractive index change, phase shift was occurred. Electron density is changed from Townsend discharge's electron bombardment, so we observed phenomena and calculated phase shift. Finally, we measured electron density by refractive index and electron density relationship. The calculated electron density value is approximately 1015~1016 cm-3. And we studied electron density value with voltage.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.79-83
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• 2008

In this paper, we introduced a LIF measurement method and summarized the theoretical side. When an altered wavelength of laser and electric power, lamp applied electric power, we measured the relative density of the metastable state in mercury after observing a laser induced fluorescence signal of 404.8nm and 546.2nm, and confirmed the horizontal distribution of plasma density in the discharge lamp. Due to this generation, the extinction of atoms in a metastable state occurred through collision, ionization, and excitation between plasma particles. The density and distribution of the metastable state depended on the energy and density of plasma particles, intensely. This highlights the importance of measuring density distribution in plasma electric discharge mechanism study. The results confirmed the resonance phenomenon regarding the energy level of atoms along a wavelength. change, and also confirmed that the largest fluorescent signal in 436nm, and that the density of atoms in 546.2nm ($6^3S_1{\to}6^3P_2$) were larger than 404.8nm ($6^3S_1{\to}6^3P_2$). According to the increase of lamp applied electric power, plasma density increased, too. When increased with laser electric power, the LIF signal reached a saturation state in more than 2.6mJ. When partial plasma density distribution along a horizontal axis was measured using the laser induced fluorescence method, the density decreased by recombination away from the center.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.59-61
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• 2002

In this study we attempted to diagnose the distribution of nitrogen plasma density generated using PECVD(plasma enhanced chemical vapor deposition). The distribution of plasma density formed in a PECVD chamber were measured by DLP2000. The experiment results showed that the plasma density is related to RF power and gas flow rate. As RF power gets higher, the plasma density linearly increased. And the experimental results revealed that a pressure in chamber affects plasma density.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.1-218.1
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• 2014

In order to measure the absolute plasma density, various probes are proposed and investigated and microwave probes are widely used for its advantages (Insensitivity to thin non-conducting material deposited by processing plasmas, High reliability, Simple process for determination of plasma density, no complicate assumptions and so forth). There are representative microwave probes such as the cutoff probe, the hairpin probe, the impedance probe, the absorption probe and the plasma transmission probe. These probes utilize the microwave interactions with the plasma-sheath and inserted structure (probe), but frequency range used by each probe and specific mechanisms for determining the plasma density for each probe are different. In the recent studies, behaviors of each microwave probe with respect to the plasma parameters of the plasma density, the pressure (the collision frequency), and the sheath width is abundant and reasonably investigated, whereas relative diagnostic characteristics of the probes by a comparative study is insufficient in spite of importance for comprehensive applications of the probes. However, experimental comparative study suffers from spatially different plasma characteristics in the same discharge chamber, a low-reproducibility of ignited plasma for an uncertainty in external discharge parameters (the power, the pressure, the flow rate and so forth), impossibility of independently control of the density, the pressure, and the sheath width as well as expensive and complicate experimental setup. In this paper, various microwave probes are simulated by finite-different time-domain simulation and the error between the input plasma density in FDTD simulations and the measured that by the unique microwave spectrums of each probe is obtained under possible conditions of plasma density, pressure, and sheath width for general low-temperature plasmas. This result shows that the each probe has an optimum applicable plasma condition and reliability of plasma density measurement using the microwave probes can be improved by the complementary use of each probe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.1-5
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• 2014

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

• Electrical & Electronic Materials
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• v.15 no.9
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• pp.10-14
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.