• Journal of Nutrition and Health
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• v.33 no.2
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• pp.167-178
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• 2000

The effect of oral vitamin e (800IU/day) and C (500mg/day) supplementation for 10 days and/or smoking cessation for 5 days on oxidative damage to the red blood cells (RBC) of male smokers (22.2$\pm$0.2 years old) was studied. RBC were tested for their ability to protect against smoking-induced oxidative damage by measuring heme proteins (carboxyhemoglobin, hemoglobin, methemoglobin, oxyhemoglobin), hemolysis and thiobarbiturinc acid reactive substances (TBARS). Plasma levels of vitamin c, A, E, $\beta$-catotene, total cholesterol, glutamic pyruvic transaminase(GPT) and glutamic oxaloacetic transaminase(GOT) were also analyzed. In experiment one, a comparison was made of heme proteins and lipid damage to RBC, plasma antioxidant status (indexed by plasma levels of vitamin C, E, A and $\beta$-carotene) between smokers(n=56) and non-smokers (n=16). No differences were found in plasma antioxidant status, heme protein damage and TBARS concentration of RBC. In experiment two, 46 fasting male smokers from experiment one were divided into 4 groups. The groups were smoking with placebo group(SP, n=14), smoking cessation with vitamins supplementatin group (SV, n=13), smoking cessation with placebo group (NSP, n=9) and smoking cessation with vitamins supplementation group (NSV, n=10). After supplementing antioxidant vitamins, significant increases were seen in plasma vitamins supplementation group (NSV, n=10). After supplementing antioxidant vitamins, significant increases were seen plasma vitamin C (p<0.05) and vitamin E levels (p<0.05). The plasma vitamin E level was highest in the NSV group. Vitmain E and C supplementation provided some protection against heme proteins and lipid damage by lowering methemoglobin, hemolysis and TBARS concentration of RBC. Smoking cessation significantly decreased TBARS of RBC and plasma total cholesterol concentration. Supplementing vitamin E and C with smoking cessation considerably lowered plasma total cholesterol. These results point to a special association among smoking, oxidative damage and plasma antioxidant vitamin status. They indicate that increases in plasma antioxidant status can be detected after the supplementation of vitamin C and E and that smoking cessation had an additional effect on plasma vitamin E level. The present data suggest that improved antioxidant status induced by antioxidant supplementation or smoking cessation may help prevent oxidative damage in smokers.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.1-155.1
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• 2013

The goals of this study are to elucidate the plasma effects on DNA molecules to apply some plasma based applications and also to find out the mechanisms of plasma-induced DNA damage in biomolecule. Nonthermal atmospheric pressure plasma has much potential for medical, agricultural and food applications for the future. The atmospheric pressure plasma jet (APPJ) contains radicals, charged particles, low energy electrons, excited molecules and UV light. It has been started doing experiments using APPJ at the early 21th. And some recent results showed that APPJ has a possibility to apply to new fields like mentioned above. But it is kind of at the very early stages of plasma based application. It is definitely necessary much of theoretical and experimental studies to further understanding to use nonthermal atmospheric pressure plasma in biomedical, agriculture and food parts. Here we introduce a new experimental system to study plasma effects on biomolecules. And we will show some recent results of LEE-induced DNA damage using electron irradiation apparatus under ultra-high vacuum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.109-110
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• 2007

Plasma etching process에서 magnetic field 영향에 관한 연구이다. High level dry etch process를 위해서는 high density plasma(HDP)가 요구된다. HDP를 위해서 MERIE(Magnetical enhancement reactive ion etcher) type의 설비가 사용되며 process chamber side에 4개의 magnetic coil을 사용한다. 이런 magnetic factor가 특히 wafer edge부문에 plasma charging에 의한 damage를 유발시키고 이로 인해 device Vth(Threshold voltage)가 shift 되면서 제품의 program 동작 문제의 원인이 되는 것을 발견하였다. 이번 연구에서 magnetic field와 관련된 plasma charge damage를 확인하고 damage free한 공정조건을 확보하게 되었다.

• Journal of Nutrition and Health
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• v.34 no.4
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• pp.401-408
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• 2001

The spontaneous frequency of genetic damage and the possible relationship of this damage to total radical-trapping antioxidant potential(TRAP) and antioxidant vitamins, including plasma levels of $\alpha$-carotene, $\beta$-carotene, cryptoxanthin, retinol, $\alpha$-tocopherol and ${\gamma}$-tocopherol in humans were investigated in 57 subjects using two indices of genetic damage, SCE & HFC frequency. The mean of SCE and HFC frequencies were weakly correlated with plasma TRAP(r=-0.305, p<0.1 for SCEs: r=-0.297, p<0.1 for HFCs, respectively), but those were strongly negatively correlated with plasma $\beta$-carotence(r=-0.385, p<0.01 for SCEs : r=-0.392, p<0.01 for HFCs) and cryptoxanthin(r=-0.312, p<0.05 for SCEs : r=0.335, p<0.05 for HFCs, respectively) levels in the subjects. However, those DNA damage markers including SCE and HFC did not correlate with either plasma $\alpha$-carotene, $\alpha$-tocopherol or retinol concentrations. The mean of SCE and HFC frequencies were positively correlated with plasma ${\gamma}$-tocopherol level(r=0.421, p<0.01 for SCEs : r=0.399, p<0.01 for HFCs, respectively). These findings indicate that increased cytogenetic DNA changes, as determined by SCE and HFC frequencies are possibly associated with generation of free radicals in lymphocytes and decreased plasma antioxidant vitamin($\beta$-carotene and cryptoxanthin) status in the subjects. (Korean J Nutrition 34(4) : 401~08, 2001)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.75-78
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• 2000

This paper is estimated to enhance yield improvement and device reliability using PDM(plasma damage monitoring) system capable of in-suit detection about plasma nonuniformity. PDM Tool is the non-contact method of wafer and surface potential electrode(kelvin probe). Its tool measures Vox(oxide barrier) with charge created by plasma. It's possible to inspect the wafer damage generated by plasma charge and analysis of in-situ monitoring data. we obtained the good data which is continuously prevented from plasma damage using its tool for 10weeks. This tool is contributed to preventive steps contemporaneously inspecting the difference of inter-chamber.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.551-552
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• 2006

Plasma-induced charging damage was been measured during TaN gate electrode of MISFET(TaN/$HfO_2$/Si) or interconnection metal etching step using large antenna structures. The results of these experiments were obtained that $HfO_2$ gate dielectric layer was affected about plasma charging effects and damage increased with F-N tunneling. Therefore, the etching conditions should be optimized to avoid the defects caused by plasma charging.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.1-4
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• 2002

As the application of semiconductor chips into electronics increases, it requires more complete integration, which results in higher performance. And it needs minimization in device design for cost saving of manufacture. Therefore oxide gap fill has become one of the major issues in sub-micron devices. Currently HDP (High-Density Plasma) CVD system is widely used in IMD (Inter Metal Dielectric) to fill narrower space between metal lines. However, HDP-CVD system has some potential problems such as plasma charging damage, metal damage and etc. Therefore, we will introduce about one of via resistance failure by metal damage and a preventive method in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.711-714
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• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.