• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1999.11a
• /
• pp.42-48
• /
• 1999

An experimental study was performed to discover the effect of environment on the tribological behavior of Si-incorporated diamond-like carbon(Si-DLC) film slid on a steel ball. The films were deposited on Si(100) wafers from radio-frequency glow discharge of mixtures of benzene and dilute silane gases. Experiments using a ball-on-disk test-rig was performed under vacuum, dry air and ambient air conditions. It was observed that coefficient of friction was decreased as the environmental condition changes from vacuum, to dry air. It was also observed that the coefficient of friction decreased with increasing silicon concentration in the film. Chemical analyses of debris suggested that the low and stable friction coefficient is closely related to the silicon rich oxide debris and the rolling action.

• Journal of the Korean Ceramic Society
• /
• v.32 no.11
• /
• pp.1301-1307
• /
• 1995

Pitting corrosion of TiN film deposited on Inconel 600 by plasma assisted chemical vapor deposition (PACVD) was investigated. Cyclic potentiodynamic polarization (CPP) tests were conducted in order to determine the pit nucleation potentials, Enp, of the TiN-deposited sample and the bare Inconel 600 in deaerated NaCl solution at 25, 135 and 20$0^{\circ}C$. The effects of the TiN film thickness, the solution temperature and the Cl- concentration on Enp were studied. Enp of the TiN-deposited sample which had the film thickness above 1${\mu}{\textrm}{m}$ were higher than those of the bare Inconel 600 by 300~600mV at all the solution temperatures, implying the pitting resistance improvement of the TiN film. The morphologies of the pits generated after immersion test were examined with a scaning electron microscopy. The higher was the solution temperature, the more corrosion products, mainly composed of Cr and Ni oxides, were formed.

• Journal of the Optical Society of Korea
• /
• v.13 no.3
• /
• pp.321-329
• /
• 2009

Following their applications in cardiology, ophthalmology and dentistry among others, the advent of lasers in dermatology and urology had become the success story of the past decade. Laser-assisted treatments in dermatology and urology are mainly based on the laser-induced tissue injury/coagulation and/or ablation, depending upon the desirable clinical endpoint. In this review, we discussed the underlying mechanisms of the laser induced tissue ablation. In any medical laser application, the controlled thermal injury and coagulation, and the extent of ablation, if required, are critical. The laser thermal mechanism of injury is intricately related to the selective absorption of light and its exposure duration, similarly to the laser induced ablation. The laser ablation mechanisms were categorized into four different categories (the photo-thermally induced ablation, the photo-mechanically induced ablation, the plasma induced ablation and the photoablation) and their fundamentals are herein described. The brief history of laser treatment modality in dermatology and urology are summarized.

• Journal of Welding and Joining
• /
• v.15 no.5
• /
• pp.21-24
• /
• 1997

화학증착법은 고융점의 경질재료, 고온재료, 고순도와 완벽한 결정성을 필요로 하는 반도체, 초전도체 및 투명전도체 등의 전자재료의 제조와 신소재 개발 등에 이용되고 있다. 그러나 1000.deg.C 부근의 고온에서 증착반응이 이루어짐으로 그 응용범위가 제한되어 있다. 이러한 제한점을 해결하기 위하여 증착온도를 낮추기 위한 방법으로 비교적 저온에서 분해가 가능한 금속유기 화합물을 반응물로 사용하여 증착반응 온도를 낮출 수가 있으며, 실제로 III-V 또는 II-VI 반도체 제조에는 금속유기 화합물에 의한 화학증착법을 이용하고 있으나, 고가의 금속유기 화합물을 사용하여야 하며 금속유기 화합물의 불안정성, 유독성 때문에 사용에 제한을 받고 있다. 최근에는 플라즈마를 부수에너지원으로 공급하여 줌으로써 증착반응의 온도를 더욱 낮추는 연구가 진행되고 있다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.459-459
• /
• 2013

Si (111) 기판 위에 plasma assisted molecular beam epitaxy 법으로 Si과 Mg doping된 GaN 나노막대를 각 각 성장하고 나노막대의 모양과 광학적 특성을 조사하였다. Si이 doping된 GaN 나노막대는 biaxial m-plane 방향의 변화로 별 모양을 갖는 것을 관찰하였고 Mg doping된 GaN 나노막대의 지름은 줄어드는 것을 scanning electron microscopy로 확인하였다. 본 연구에서는 이러한 변화의 원인을 stress 때문으로 보고 x-ray diffraction과 raman scattering 측정을 통하여 구조적 변화를 조사하였다. 또한, stress에 의한 GaN 나노막대의광학적 특성 변화를 photoluminescence을 통하여 조사하였다. Doping한 GaN 나노막대의 특성조사를 통해 GaN 나노막대 성장 시 발생되는 stress의 영향을 이해하는데 중요한 정보를 제공할 것이다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.485-485
• /
• 2013

Plasma-assisted molecular beam epitaxy법으로 자가 형성되는 InN 박막을 활용하여 GaN 박막의 결함밀도를 감소시키는 성장 구조 조건에 대하여 연구하였다. Sapphire 기판 위에 저온에서 GaN 핵층을 3 nm 두께로 성장하고, 그 위에 InN 박막을 성장 한 후, 고온에서 GaN을 성장하였다. InN박막의 성장 온도는 $450^{\circ}C$이고, 성장 시간을 30초에서 1분 30초까지 각각 달리 하였다. 실험결과 InN 층이 삽입된 GaN 박막이 상대적으로 고른 표면이 형성되는 과정을 reflection high energy electron diffraction로 관측하였고, atomic force microscope를 측정하여 표면 거칠기의 개선을 확인하였다. InN 성장시간 변화에 따른 결정학적, 광학적 특성 변화를 x-ray diffraction, photoluminescence 이용하여 조사하였고, 본 연구를 통해 InN박막을 활용한 양질의 GaN 박막 성장 가능성을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.5
• /
• pp.380-386
• /
• 1991

Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

• Journal of the Korean Ceramic Society
• /
• v.35 no.1
• /
• pp.41-47
• /
• 1998

Cutting and planarization of diamond films have been performed using copper vapor laser under air at-mosphere. Diamond films of about 350${\mu}{\textrm}{m}$ and 800 ${\mu}{\textrm}{m}$ thick have been synthesized with DC plasma assisted chemical vapor deposition. The position of a specimen has been controlled by computer-driven stage. With copper vapor laser beam of 7W cutting depth increases rapidly and saturates with increasing scan number and decreasing scan speed. 8 repetitive scans at scan speed 0.5 mm/sec produce the maximum cutting depth without focus shifting Rod-shape copper vapor laser beam can be made and used effectively in planar-ization of rough diamond surface.

• The Korean Journal of Ceramics
• /
• v.3 no.1
• /
• pp.29-33
• /
• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• The Korean Journal of Ceramics
• /
• v.3 no.1
• /
• pp.34-36
• /
• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.