• Carbon letters
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• v.12 no.4
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• pp.185-193
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• 2011

Carbon nanotubes (CNTs) have developed into one of the most competitively researched nano-materials of this decade because of their structural uniqueness and excellent physical properties such as nanoscale one dimensionality, high aspect ratio, high mechanical strength, thermal conductivity and excellent electrical conductivity. Mass production and structure control of CNTs are key factors for a feasible CNT industry. Water and ethanol vapor enhance the catalytic activity for massive growth of vertically aligned CNTs. A shower system for gas flow improves the growth of vertically aligned single walled CNTs (SWCNTs) by controlling the gas flow direction. Delivery of gases from the top of the nanotubes enables direct and precise supply of carbon source and water vapor to the catalysts. High quality vertically aligned SWCNTs synthesized using plasma enhance the chemical vapor deposition technique on substrate with suitable metal catalyst particles. This review provides an introduction to the concept of the growth of vertically aligned SWCNTs and covers advanced topics on the controlled synthesis of vertically aligned SWCNTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1462-1464
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• 2006

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.618-621
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• 2007

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions $(N^+)$ to investigate the influence of substrate bias voltage $(V_b)$ on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 $V_b$ depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 $V_b$.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.148-154
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• 2003

Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.596-602
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.25-28
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• 2000

In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma (ICP). The etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity Of $Y_2$O$_3$ to YMnO$_3$ were 302/min, and 2.4 at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2 repectively. In x-ray photoelectron spectroscopy (XPS) analysis, $Y_2$O$_3$ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCI, and YCl$_3$ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.445-448
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• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.